Nitrogen-Terminated Polycrystalline Diamond Surfaces by Microwave Chemical Vapor Deposition: Thermal Stability, Chemical States, and Electronic Structure

2020 ◽  
Vol 124 (10) ◽  
pp. 5657-5664 ◽  
Author(s):  
Mohammed Attrash ◽  
Mohan Kumar Kuntumalla ◽  
Shaul Michaelson ◽  
Alon Hoffman
RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98001-98009 ◽  
Author(s):  
Thais Chagas ◽  
Thiago H. R. Cunha ◽  
Matheus J. S. Matos ◽  
Diogo D. dos Reis ◽  
Karolline A. S. Araujo ◽  
...  

We have used atomically-resolved scanning tunneling microscopy and spectroscopy to study the interplay between the atomic and electronic structure of graphene formed on copper via chemical vapor deposition.


1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.


1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.


2019 ◽  
Vol 48 (20) ◽  
pp. 6709-6713 ◽  
Author(s):  
Liuchuan Tong ◽  
Luke M. Davis ◽  
Xian Gong ◽  
Jun Feng ◽  
Eugene S. Beh ◽  
...  

Coinage metal bicyclic amidinates for chemical vapor deposition.


1994 ◽  
Vol 12 (6) ◽  
pp. 3033-3039 ◽  
Author(s):  
Lye Hing Chua ◽  
Richard B. Jackman ◽  
John S. Foord ◽  
Paul R. Chalker ◽  
Colin Johnston ◽  
...  

1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  

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