scholarly journals Atomic-Scale Surface Structure and CO Tolerance of NiCu Single-Atom Alloys

2019 ◽  
Vol 123 (46) ◽  
pp. 28142-28147 ◽  
Author(s):  
Dipna A. Patel ◽  
Ryan T. Hannagan ◽  
Paul L. Kress ◽  
Alex C. Schilling ◽  
Volkan Çınar ◽  
...  
Keyword(s):  
Surface Structure ◽  
Atomic Scale ◽  
Single Atom ◽  
Co Tolerance ◽  
Scale Surface ◽  
Single Atom Alloys

scholarly journals Atomic Scale Surface Structure and Morphology of InAs Nanowire Crystal Superlattices: The Effect of Epitaxial Overgrowth

2015 ◽  
Vol 7 (10) ◽  
pp. 5748-5755 ◽  
Author(s):  
J. V. Knutsson ◽  
S. Lehmann ◽  
M. Hjort ◽  
P. Reinke ◽  
E. Lundgren ◽  
...  
Keyword(s):  
Surface Structure ◽  
Atomic Scale ◽  
Structure And Morphology ◽  
Scale Surface

Atomic Scale Surface Structure of Pt/Cu(111) Surface Alloys

2014 ◽  
Vol 118 (6) ◽  
pp. 3015-3022 ◽  
Author(s):  
Felicia R. Lucci ◽  
Timothy J. Lawton ◽  
Alex Pronschinske ◽  
E. Charles H. Sykes
Keyword(s):  
Surface Structure ◽  
Atomic Scale ◽  
Surface Alloys ◽  
Scale Surface

Morphology and atomic-scale surface structure of barium titanate nanocrystals formed at hydrothermal conditions

2009 ◽  
Vol 311 (8) ◽  
pp. 2437-2442 ◽  
Author(s):  
Xinhua Zhu ◽  
Zhenghai Zhang ◽  
Jianmin Zhu ◽  
Shunhua Zhou ◽  
Zhiguo Liu
Keyword(s):  
Barium Titanate ◽  
Surface Structure ◽  
Atomic Scale ◽  
Hydrothermal Conditions ◽  
Scale Surface

Catalytic activity of palladium-doped silver dilute nanoalloys for formate oxidation from a theoretical perspective

2019 ◽  
Vol 21 (40) ◽  
pp. 22598-22610 ◽  
Author(s):  
Nan Zhang ◽  
Fuyi Chen ◽  
Longfei Guo
Keyword(s):  
Catalytic Activity ◽  
Oxidation Reaction ◽  
Theoretical Perspective ◽  
Single Atom ◽  
High Catalytic Activity ◽  
Formate Oxidation ◽  
First Time ◽  
Single Atom Alloys

We demonstrate for the first time that the Pd1Ag single-atom alloys exhibit a high catalytic activity for formate oxidation reaction.

Ohm’s Law Survives to the Atomic Scale

Science ◽  
2012 ◽  
Vol 335 (6064) ◽  
pp. 64-67 ◽  
Author(s):  
B. Weber ◽  
S. Mahapatra ◽  
H. Ryu ◽  
S. Lee ◽  
A. Fuhrer ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Quantum Information Processing ◽  
Silicon Crystal ◽  
Tight Binding ◽  
Atomic Scale ◽  
Single Atom ◽  
Active Device ◽  
Average Spacing ◽  
Surfaces And Interfaces ◽  
Atomic Limit

As silicon electronics approaches the atomic scale, interconnects and circuitry become comparable in size to the active device components. Maintaining low electrical resistivity at this scale is challenging because of the presence of confining surfaces and interfaces. We report on the fabrication of wires in silicon—only one atom tall and four atoms wide—with exceptionally low resistivity (~0.3 milliohm-centimeters) and the current-carrying capabilities of copper. By embedding phosphorus atoms within a silicon crystal with an average spacing of less than 1 nanometer, we achieved a diameter-independent resistivity, which demonstrates ohmic scaling to the atomic limit. Atomistic tight-binding calculations confirm the metallicity of these atomic-scale wires, which pave the way for single-atom device architectures for both classical and quantum information processing.

Atomic-scale surface science phenomena studied by scanning tunneling microscopy

2009 ◽  
Vol 603 (10-12) ◽  
pp. 1315-1327 ◽  
Author(s):  
F. Besenbacher ◽  
J.V. Lauritsen ◽  
T.R. Linderoth ◽  
E. Lægsgaard ◽  
R.T. Vang ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface Science ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Scale Surface
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