Distinguishing Bulk and Grain Boundary Transport of a Proton-Conducting Electrolyte by Combining Equivalent Circuit Scheme and Distribution of Relaxation Times Analyses

2019 ◽  
Vol 123 (36) ◽  
pp. 21993-21997 ◽  
Author(s):  
Julia G. Lyagaeva ◽  
Gennady K. Vdovin ◽  
Dmitry A. Medvedev
Keyword(s):  
Grain Boundary ◽  
Equivalent Circuit ◽  
Relaxation Times ◽  
Proton Conducting ◽  
Grain Boundary Transport

scholarly journals Влияние влажности на электроперенос протонпроводящих перовскитов AZr-=SUB=-0.95-=/SUB=-Sc-=SUB=-0.05-=/SUB=-O-=SUB=-3-alpha-=/SUB=- (A=Ca, Sr, Ba) в окислительной атмосфере

2019 ◽  
Vol 61 (4) ◽  
pp. 645
Author(s):  
В.Б. Балакирева ◽  
В.П. Горелов ◽  
Л.А. Дунюшкина ◽  
А.В. Кузьмин
Keyword(s):  
Impedance Spectroscopy ◽  
Grain Boundary ◽  
General Formula ◽  
Considerable Effect ◽  
Humid Atmosphere ◽  
Proton Conducting ◽  
Hydronium Ion ◽  
The Impact

AbstractThe total, bulk, and grain boundary conductivities of proton-conducting zirconates of general formula AZr_0.95Sc_0.05O_3 – α (AZS), where A = Ca, Sr, Ba, are measured in air with different humidity levels. The conductivity is measured using the four-probe dc method (600–900°C) and impedance spectroscopy (30–800°C). The impact of humid atmosphere on the total, bulk, and grain boundary conductivities of the AZS system is studied at different humidity levels: $${{p}_{{{{{\text{H}}}_{{\text{2}}}}{\text{O}}}}}$$ = 0.04, 0.61, and 2.5 kPa. Humidity is found to have a considerable effect on the conductivity of our CaZS and BaZS at lower temperatures, suggesting the likelihood of hydronium ion-mediated transport.

scholarly journals Space–charge theory applied to the grain boundary impedance of proton conducting BaZr0.9Y0.1O3−δ

2010 ◽  
Vol 181 (5-7) ◽  
pp. 268-275 ◽  
Author(s):  
Christian Kjølseth ◽  
Harald Fjeld ◽  
Øystein Prytz ◽  
Paul Inge Dahl ◽  
Claude Estournès ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Space Charge ◽  
Proton Conducting ◽  
Boundary Impedance

Effect of oxygen partial pressure on grain-boundary transport in alumina

2018 ◽  
Vol 153 ◽  
pp. 205-213 ◽  
Author(s):  
Yan Wang ◽  
Helen M. Chan ◽  
Jeffrey M. Rickman ◽  
Martin P. Harmer
Keyword(s):  
Grain Boundary ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Effect Of Oxygen ◽  
Grain Boundary Transport

Diffusion and Electromigration of Cu in Single Crystal Al Interconnects

1998 ◽  
Vol 516 ◽  
Author(s):  
V. T. Srikar ◽  
C. V. Thompson
Keyword(s):  
Grain Boundary ◽  
Single Crystal ◽  
Concentration Profile ◽  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Effect Of Temperature ◽  
Cu Alloys ◽  
Grain Structures ◽  
Kinetics Of ◽  
Grain Boundary Transport

AbstractThe electromigration-induced transport properties of Cu in Al-Cu alloys, and their effect on electromigration lifetimes in interconnects with bamboo grain structures are not well understood. To isolate and study the mechanisms and kinetics of Cu diffusion and electromigration in interconnects for which grain boundary transport is not dominant, we have developed a test structure consisting of parallel Al single crystal lines, with every alternate line terminating in contact pads. Cu is locally added to the same regions in all the lines, and the effect of temperature and electric field can be simultaneously characterized by analyzing the Cu concentration profile measured using electron-probe microanalysis. Comparison of the calculated values of diffusivities with the diffusivity of Cu through the Al lattice, and through dislocation cores in Al, suggests that the path of diffusion of Cu in Al single crystals is along the Al/AlOx interface.

Grain boundary transport in sputter-deposited nanometric thin films of lithium manganese oxide

Nano Energy ◽  
2018 ◽  
Vol 43 ◽  
pp. 340-350 ◽  
Author(s):  
Juliane Mürter ◽  
Susann Nowak ◽  
Efi Hadjixenophontos ◽  
Yug Joshi ◽  
Guido Schmitz
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Manganese Oxide ◽  
Lithium Manganese Oxide ◽  
Lithium Manganese ◽  
Sputter Deposited ◽  
Grain Boundary Transport

Probing Grain-Boundary Chemistry and Electronic Structure in Proton-Conducting Oxides by Atom Probe Tomography

Nano Letters ◽  
2016 ◽  
Vol 16 (11) ◽  
pp. 6924-6930 ◽  
Author(s):  
Daniel R. Clark ◽  
Huayang Zhu ◽  
David R. Diercks ◽  
Sandrine Ricote ◽  
Robert J. Kee ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Grain Boundary ◽  
Atom Probe Tomography ◽  
Atom Probe ◽  
Proton Conducting ◽  
Conducting Oxides ◽  
Boundary Chemistry

High-spatial-resolution x-ray microanalysis of Al-2wt.% Cu aluminum thin films

1989 ◽  
Vol 47 ◽  
pp. 216-217
Author(s):  
A. D. Romig ◽  
D. R. Frear ◽  
T. J. Headley
Keyword(s):  
Integrated Circuits ◽  
Grain Boundary ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Copper Alloys ◽  
X Ray ◽  
Cu Films ◽  
Grain Boundary Transport ◽  
Film Form ◽  
Si Wafer

Aluminum - 2 wt.% copper alloys are commonly used in thin film form as interconnect metallization lines for integrated circuits. Experience has shown that the addition of the Cu to the Al, albeit at a decrease in conductivity, makes the metallizations more resistant to failure by electromigration. However, the mechanism by which Cu increases the resistance to electromigration has never been positively identified. One theory proposes that Cu coats the Al grain boundaries (boundaries are enriched in Cu) and retards grain boundary diffusion thereby reducing electromigration. Another theory suggests that a continuous thin layer of CuAl2 forms along the boundaries also reducing grain boundary transport and therefore the tendency to electromigrate. Recently, Frear et al. have reported on a detailed set of experiments to examine these theories from a microstructural viewpoint. Here, the details of the high spatial resolution microanalysis done to support the study of Fear, et al. are reported.Al- 2wt.% Cu was magnetron sputtered onto a borosilicate glass (BSG) coated (100) Si wafer. The Al-Cu films were sputtered at room temperature from a single source under an argon atmosphere at a deposition rate of 100 nm/min. Films 400 and 800 nm thick were prepared. The films were annealed under a 15% hydrogen forming gas (reducing) at 425°C for 35 min.

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