Unraveling the Failure Modes of Molecular Diodes: The Importance of the Monolayer Formation Protocol and Anchoring Group to Minimize Leakage Currents

2019 ◽  
Vol 123 (32) ◽  
pp. 19759-19767
Author(s):  
Lejia Wang ◽  
Li Yuan ◽  
Li Jiang ◽  
Xiaojiang Yu ◽  
Liang Cao ◽  
...  
2000 ◽  
Author(s):  
Herbert R. Shea ◽  
Carolyn D. White ◽  
Arman Gasparyan ◽  
Robert B. Comizzoli ◽  
Susanne Arney

Abstract We present a study of the anodic oxidation of MEMS poly-Silicon electrodes and wires in ambients with high relative humidity and high voltages. MEMS poly-Si electrodes that are hermetically packaged in dry ambients show no signs of degradation on a time scale of years even when operated at hundreds of volts. To accelerate electrical failure modes, we expose unpackaged chips to ambients with high relative humidity. We then observe anodic oxidation of the most positively biased poly-Si structures on a time scale of minutes or hours. We describe this anodic oxidation as a function of relative humidity and voltage, and its dependence on surface leakage currents.


2014 ◽  
Vol 136 (18) ◽  
pp. 6554-6557 ◽  
Author(s):  
Li Yuan ◽  
Li Jiang ◽  
Damien Thompson ◽  
Christian A. Nijhuis

Langmuir ◽  
2009 ◽  
Vol 25 (3) ◽  
pp. 1495-1499 ◽  
Author(s):  
Youngu Lee ◽  
Brian Carsten ◽  
Luping Yu

2019 ◽  
Vol 963 ◽  
pp. 777-781
Author(s):  
Siddarth Sundaresan ◽  
Vamsi Mulpuri ◽  
Stoyan Jeliazkov ◽  
Ranbir Singh

A comprehensive investigation of the operating limits and failure modes for 4600 V/7.78 mm2 SiC DMOSFETs under unclamped inductive switching (UIS) conditions is presented. Maximum single-pulse avalanche energies (EAS) as high as 1.07 J (13.75 J/cm2) and avalanche withstand times (tAV) as high as 71 μs are recorded. The variation of EAS and tAV with load inductance (or avalanche current) is quantified. Stability of the key DMOSFET performance characteristics including RDS,on, VTH, body-diode, gate/drain leakage currents and terminal capacitances under both single-pulse and repetitive (up to 1000 shots) avalanche conditions are examined. Different failure locations confined within the active area of the DMOSFETs are identified after avalanche failure for either low or high EAS failed devices and a tentative model to explain the failure physics is presented.


Author(s):  
S. Khadpe ◽  
R. Faryniak

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.


1959 ◽  
Vol 9 (12) ◽  
pp. 621-628
Author(s):  
A. Roylance ◽  
T. G. Jones
Keyword(s):  

2019 ◽  
Vol 7 (2B) ◽  
Author(s):  
Vanderley Vasconcelos ◽  
Wellington Antonio Soares ◽  
Raissa Oliveira Marques ◽  
Silvério Ferreira Silva Jr ◽  
Amanda Laureano Raso

Non-destructive inspection (NDI) is one of the key elements in ensuring quality of engineering systems and their safe use. This inspection is a very complex task, during which the inspectors have to rely on their sensory, perceptual, cognitive, and motor skills. It requires high vigilance once it is often carried out on large components, over a long period of time, and in hostile environments and restriction of workplace. A successful NDI requires careful planning, choice of appropriate NDI methods and inspection procedures, as well as qualified and trained inspection personnel. A failure of NDI to detect critical defects in safety-related components of nuclear power plants, for instance, may lead to catastrophic consequences for workers, public and environment. Therefore, ensuring that NDI is reliable and capable of detecting all critical defects is of utmost importance. Despite increased use of automation in NDI, human inspectors, and thus human factors, still play an important role in NDI reliability. Human reliability is the probability of humans conducting specific tasks with satisfactory performance. Many techniques are suitable for modeling and analyzing human reliability in NDI of nuclear power plant components, such as FMEA (Failure Modes and Effects Analysis) and THERP (Technique for Human Error Rate Prediction). An example by using qualitative and quantitative assessesments with these two techniques to improve typical NDI of pipe segments of a core cooling system of a nuclear power plant, through acting on human factors issues, is presented.


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