Anodic Oxidation and Reliability of MEMS Poly-Silicon Electrodes at High Voltages and in High Relative Humidity

2000 ◽  
Author(s):  
Herbert R. Shea ◽  
Carolyn D. White ◽  
Arman Gasparyan ◽  
Robert B. Comizzoli ◽  
Susanne Arney
Keyword(s):  
Relative Humidity ◽  
Anodic Oxidation ◽  
Time Scale ◽  
Failure Modes ◽  
High Relative Humidity ◽  
Leakage Currents ◽  
Electrical Failure ◽  
Poly Silicon ◽  
Surface Leakage

Abstract We present a study of the anodic oxidation of MEMS poly-Silicon electrodes and wires in ambients with high relative humidity and high voltages. MEMS poly-Si electrodes that are hermetically packaged in dry ambients show no signs of degradation on a time scale of years even when operated at hundreds of volts. To accelerate electrical failure modes, we expose unpackaged chips to ambients with high relative humidity. We then observe anodic oxidation of the most positively biased poly-Si structures on a time scale of minutes or hours. We describe this anodic oxidation as a function of relative humidity and voltage, and its dependence on surface leakage currents.

Anodic oxidation and reliability of MEMS polysilicon electrodes at high relative humidity and high voltages

2000 ◽  
Author(s):  
Herbert R. Shea ◽  
Arman Gasparyan ◽  
Carolyn D. White ◽  
Robert B. Comizzoli ◽  
David Abusch-Magder ◽  
...  
Keyword(s):  
Relative Humidity ◽  
Anodic Oxidation ◽  
High Relative Humidity

Persistence of nosocomial bacteria on 2 biocidal fabrics based on silver under conditions of high relative humidity

2014 ◽  
Vol 42 (8) ◽  
pp. 879-884 ◽  
Author(s):  
Rosa López-Gigosos ◽  
Alberto Mariscal ◽  
Mario Gutierrez-Bedmar ◽  
Eloisa Mariscal-Lopez ◽  
Joaquín Fernández-Crehuet
Keyword(s):  
Relative Humidity ◽  
High Relative Humidity

APPLICATION OF EPITAXIAL UNIPOLAR BARRIERS TO REDUCE NOISE CURRENTS IN PHOTODETECTORS

2011 ◽  
Vol 20 (03) ◽  
pp. 557-564
Author(s):  
G. R. SAVICH ◽  
J. R. PEDRAZZANI ◽  
S. MAIMON ◽  
G. W. WICKS
Keyword(s):  
Leakage Current ◽  
Surface Passivation ◽  
Leakage Currents ◽  
Type Region ◽  
Surface Leakage Current ◽  
Unipolar Barrier ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Tunneling Currents ◽  
Surface Leakage

Tunneling currents and surface leakage currents are both contributors to the overall dark current which limits many semiconductor devices. Surface leakage current is generally controlled by applying a post-epitaxial passivation layer; however, surface passivation is often expensive and ineffective. Band-to-band and trap assisted tunneling currents cannot be controlled through surface passivants, thus an alternative means of control is necessary. Unipolar barriers, when appropriately applied to standard electronic device structures, can reduce the effects of both surface leakage and tunneling currents more easily and cost effectively than other methods, including surface passivation. Unipolar barriers are applied to the p -type region of a conventional, MBE grown, InAs based pn junction structures resulting in a reduction of surface leakage current. Placing the unipolar barrier in the n -type region of the device, has the added benefit of reducing trap assisted tunneling current as well as surface leakage currents. Conventional, InAs pn junctions are shown to exhibit surface leakage current while unipolar barrier photodiodes show no detectable surface currents.

Electrostatics demonstrations at high relative humidity

1984 ◽  
Vol 52 (1) ◽  
pp. 86-86 ◽  
Author(s):  
William Lichten ◽  
Paul McGrath
Keyword(s):  
Relative Humidity ◽  
High Relative Humidity
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