scholarly journals Correction to “Quantum-State-Resolved Scattering of NO(2Π1/2) from Hot Molten Au(liq): On the Role of Thermal Electron–Hole Pairs in Vibrational Excitation Dynamics”

2019 ◽  
Vol 123 (25) ◽  
pp. 15874-15874
Author(s):  
Amelia Zutz ◽  
David J. Nesbitt
Keyword(s):  
Quantum State ◽  
Vibrational Excitation ◽  
Electron Hole ◽  
Thermal Electron ◽  
Quantum State Resolved ◽  
Excitation Dynamics

scholarly journals Instability of the marginal commutative model of tunneling centers interacting with a metallic environment: Role of the electron-hole symmetry breaking

1997 ◽  
Vol 56 (20) ◽  
pp. 12947-12960 ◽  
Author(s):  
A. Zawadowski ◽  
G. Zaránd ◽  
P. Nozières ◽  
K. Vladár ◽  
G. T. Zimányi
Keyword(s):  
Symmetry Breaking ◽  
Electron Hole ◽  
Tunneling Centers

Phonon Coupling and Dielectric Response in 2D Semiconductor

NANO ◽  
2021 ◽  
Author(s):  
Arslan Usman ◽  
Abdul Sattar ◽  
Hamid Latif ◽  
Muhammad Imran
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Coupling Mechanism ◽  
Two Dimensional ◽  
Electron Hole ◽  
Exciton Coupling ◽  
Gain Energy ◽  
Metal Dichalcogenides ◽  
Layered Transition Metal ◽  
The Impact

The impact of phonon and their surrounding environment on exciton and its complexes were investigated in monolayer WSe2 semiconductor. Phonon up-conversion has been studied in past for conventional III–V semiconductors, but its role in two-dimensional layered transition metal dichalcogenides has rarely been explored. We investigated the photoluminescence up-conversion mechanism in WSe2 monolayer and found that a lower energy photon gain energy upto 64[Formula: see text]meV to be up-converted to emission photon at room temperature. Moreover, the phonon-exciton coupling mechanism has also been investigated and the role of dielectric screening has been explored to get complete insight of coulomb’s interaction in these electron-hole pairs. Investigations of charge carrier’s lifetime reveal that boron nitride encapsulated monolayer has shorter recombination time as low as 41 ps as compared to a bare monolayer on SiO2 substrate. These results are very promising for realizing spintronics-based application from two-dimensional layered semiconductors.

Role of Coulomb-correlated electron-hole pairs in ZnSe-based quantum-well diode lasers

1994 ◽  
Vol 50 (8) ◽  
pp. 5787-5790 ◽  
Author(s):  
J. Ding ◽  
M. Hagerott ◽  
P. Kelkar ◽  
A. V. Nurmikko ◽  
D. C. Grillo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Electron Hole ◽  
Correlated Electron
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