Red-Shifted Photoluminescence from Crystal Edges Due to Carrier Redistribution and Reabsorption in Lead Triiodide Perovskites

2019 ◽  
Vol 123 (19) ◽  
pp. 12521-12526 ◽  
Author(s):  
Daocheng Hong ◽  
Jun Li ◽  
Sushu Wan ◽  
Ivan G. Scheblykin ◽  
Yuxi Tian
Author(s):  
Norimichi Chinone ◽  
Yasuo Cho

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.


2004 ◽  
Vol 84 (8) ◽  
pp. 1311-1313 ◽  
Author(s):  
M. Schubert ◽  
C. Bundesmann ◽  
H. v. Wenckstern ◽  
G. Jakopic ◽  
A. Haase ◽  
...  

2012 ◽  
Vol 29 (9) ◽  
pp. 097201 ◽  
Author(s):  
Chuan-Feng Li ◽  
Geng Chen ◽  
Ming Gong ◽  
Hai-Qiao Li ◽  
Zhi-Chuan Niu

Author(s):  
Orest J. Glembocki ◽  
Marek Skowronski ◽  
S.M. Prokes ◽  
D. Kurt Gaskill ◽  
Joshua D. Caldwell

2004 ◽  
Vol 69 (20) ◽  
Author(s):  
S. Mackowski ◽  
G. Prechtl ◽  
W. Heiss ◽  
F. V. Kyrychenko ◽  
G. Karczewski ◽  
...  

2006 ◽  
Vol 74 (24) ◽  
Author(s):  
C. Cornet ◽  
M. Hayne ◽  
P. Caroff ◽  
C. Levallois ◽  
L. Joulaud ◽  
...  

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