Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy

2019 ◽  
Vol 123 (14) ◽  
pp. 9192-9201 ◽  
Author(s):  
Andreas Hutzler ◽  
Christian D. Matthus ◽  
Christian Dolle ◽  
Mathias Rommel ◽  
Michael P. M. Jank ◽  
...  
Keyword(s):  
Reflectance Spectroscopy ◽  
Wavelength Shift ◽  
Two Dimensional ◽  
Large Area ◽  
Two Dimensional Materials ◽  
Visible Reflectance

scholarly journals Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials

10.3791/58693 ◽  
2019 ◽  
Author(s):  
Josh P. Thompson ◽  
M. Hasan Doha ◽  
Peter Murphy ◽  
Jin Hu ◽  
Hugh O.H. Churchill
Keyword(s):  
Two Dimensional ◽  
Large Area ◽  
Two Dimensional Materials

scholarly journals Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Ali Zavabeti ◽  
Azmira Jannat ◽  
Li Zhong ◽  
Azhar Ali Haidry ◽  
Zhengjun Yao ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Large Area ◽  
Large Crystal ◽  
High Quality ◽  
Future Technology ◽  
Advantages And Disadvantages ◽  
Grain Sizes ◽  
Two Dimensional Materials ◽  
Synthesis Properties ◽  
Synthetic Routes

AbstractLarge-area and high-quality two-dimensional crystals are the basis for the development of the next-generation electronic and optical devices. The synthesis of two-dimensional materials in wafer scales is the first critical step for future technology uptake by the industries; however, currently presented as a significant challenge. Substantial efforts have been devoted to producing atomically thin two-dimensional materials with large lateral dimensions, controllable and uniform thicknesses, large crystal domains and minimum defects. In this review, recent advances in synthetic routes to obtain high-quality two-dimensional crystals with lateral sizes exceeding a hundred micrometres are outlined. Applications of the achieved large-area two-dimensional crystals in electronics and optoelectronics are summarised, and advantages and disadvantages of each approach considering ease of the synthesis, defects, grain sizes and uniformity are discussed.

Reliable Exfoliation of Large-Area High-Quality Flakes of Graphene and Other Two-Dimensional Materials

ACS Nano ◽  
2015 ◽  
Vol 9 (11) ◽  
pp. 10612-10620 ◽  
Author(s):  
Yuan Huang ◽  
Eli Sutter ◽  
Norman N. Shi ◽  
Jiabao Zheng ◽  
Tianzhong Yang ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Large Area ◽  
High Quality ◽  
Two Dimensional Materials

scholarly journals Strong exciton-photon coupling in large area MoSe2 and WSe2 heterostructures fabricated from two-dimensional materials grown by chemical vapor deposition

2D Materials ◽  
2020 ◽  
Vol 8 (1) ◽  
pp. 011002
Author(s):  
Daniel J Gillard ◽  
Armando Genco ◽  
Seongjoon Ahn ◽  
Thomas P Lyons ◽  
Kyung Yeol Ma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Large Area ◽  
Two Dimensional Materials ◽  
Photon Coupling

scholarly journals Stacking of Two-Dimensional Materials to Large-Area Heterostructures by Wafer Bonding

2021 ◽  
Author(s):  
Arne Quellmalz ◽  
Simon Sawallich ◽  
Maximilian Prechtl ◽  
Oliver Hartwig ◽  
Siwei Luo ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Two Dimensional ◽  
Large Area ◽  
Two Dimensional Materials

Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials

Nanoscale ◽  
2018 ◽  
Vol 10 (3) ◽  
pp. 1056-1062 ◽  
Author(s):  
Hunyoung Bark ◽  
Yongsuk Choi ◽  
Jaehyuck Jung ◽  
Jung Hwa Kim ◽  
Hyukjoon Kwon ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Two Dimensional ◽  
Deposition Method ◽  
Transparent Electrodes ◽  
Large Area ◽  
Two Dimensional Materials ◽  
Niobium Disulfide

Large-area NbS2 films have been synthesized by using the chemical vapor deposition method and exhibited their potential as transparent electrodes for 2D semiconductor devices.

scholarly journals ‘Colorful’ Polyline Grain Boundaries in Two-dimensional Transition Metal Dichalcogenides

2021 ◽  
Author(s):  
Maolin Yu ◽  
Chao Zhu ◽  
Yongmin He ◽  
Jiadong Zhou ◽  
Ying Xu ◽  
...  
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
Transition Metal Dichalcogenides ◽  
Structural Diversity ◽  
Mapping Method ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Large Area ◽  
Strain Mapping ◽  
Two Dimensional Materials

Abstract Grain boundaries (GBs) are vital to crystal materials and their applications. Although the GBs in bulk and two-dimensional materials have been extensively studied, the polyline GBs prevalently forming in transition metal dichalcogenide monolayers by a sequence of folded segments remain a mystery. We visualize the large-area distribution of the polyline GBs in MoSe2 monolayers by means of a strain mapping method and unravel their structural origin using ab initio calculations combined with high-resolution atomic characterizations. Unlike normal GBs in two-dimensional materials with one type of dislocation cores, the polyline GBs consist of two basic elements—4|8 and 4|4|8 cores, whose alloying results in structural diversity and distinctly high stability due to relieved stress fields nearby. The defective polygons can uniquely migrate along the polyline GBs via the movement of single molybdenum atoms, unobtrusively giving the GBs their chameleon-like ‘colorful’ appearances. Furthermore, the polyline GBs can achieve useful functionalities such as intrinsic magnetism and highly active electrocatalysis.

Two-dimensional materials of group IVA: Latest advances in epitaxial methods of growth

2021 ◽  
pp. 3-10
Author(s):  
K.A. Lozovoy ◽  
◽  
V.V. Dirko ◽  
V.P. Vinarskiy ◽  
A.P. Kokhanenko ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Central Research ◽  
Experimental Production ◽  
Two Dimensional ◽  
Large Area ◽  
Elastic Stresses ◽  
Starting Point ◽  
Two Dimensional Materials ◽  
Group Iva ◽  
New Generation

Two-dimensional materials have become one of the central research topics of scientists around the world after the production of graphene - a monatomic layer of carbon. Currently, two-dimensional crystals are among the most promising materials for next-generation nanoelectronics and photonics. The exploration of the feasibility of 2D materials devices causes a deeper insight into the physical properties of these new materials and provides a starting point for the development of a number of important practical areas. Over the past few years, researchers have been attracting increased attention from graphene-like materials of group IVA elements, such as silicene (Si), germanene (Ge), stanene (Sn), and plumbene (Pb). Experimental production and study of the unique properties of two-dimensional monatomic layers of carbon, silicon, germanium, tin and lead on various substrates created the prerequisites for the development of new generation devices based on them. The wide possibilities for controlling their exotic electronic, magnetic and optical properties through the choice of the substrate, the design and geometry of the two-dimensional layer, as well as by controlling the magnitude of elastic stresses, have made them a dominating topic for studying in the field of nanotechnology and materials sciences. This paper reviews the latest advances in growing silicene, germanene, stanene, and plumbene using epitaxial methods. Growth technologies for creation of high-quality two-dimensional structures of large area required for promising instrumentation area are considered in more details.

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