Ethanol-CVD Growth of Sub-mm Single-Crystal Graphene on Flat Cu Surfaces

2018 ◽  
Vol 122 (50) ◽  
pp. 28830-28838 ◽  
Author(s):  
Andrea Gnisci ◽  
Giuliana Faggio ◽  
Giacomo Messina ◽  
Junyoung Kwon ◽  
Jong-Young Lee ◽  
...  
Keyword(s):  
Single Crystal ◽  
Cvd Growth

scholarly journals Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor

2D Materials ◽  
2015 ◽  
Vol 2 (1) ◽  
pp. 014006 ◽  
Author(s):  
V Miseikis ◽  
D Convertino ◽  
N Mishra ◽  
M Gemmi ◽  
T Mashoff ◽  
...  
Keyword(s):  
Single Crystal ◽  
Cold Wall ◽  
Cvd Growth

Lift -Off Process to get Free-Standing High Quality Single Crystal Diamond Films and Suspended Single Crystal Diamond Devices

2006 ◽  
Vol 956 ◽  
Author(s):  
Jie Yang ◽  
C. F. Wang ◽  
E. L. Hu ◽  
James E. Butler
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Light Transmission ◽  
Electrochemical Etching ◽  
Etching Process ◽  
Critical Parameters ◽  
Transmission Microscopy ◽  
Single Crystal Diamond ◽  
Cvd Growth ◽  
Lift Off

ABSTRACTFreestanding and suspended single crystal diamond devices, micro disks and beam structures, have been fabricated on single crystal diamond substrates using a lift-off process employing ion implantation followed by electrochemical etching. The ion implantation created subsurface damage in the diamond while the top surface was sufficiently undamaged that a subsequent homo-epitaxial diamond layer could be grown by chemical vapor deposition (CVD). After the CVD growth and patterning by lithography and reactive ion etching, the underlying damage layer was etched/removed by an electrochemical etch. Different implant ions and energies were simulated and tested to optimize the process. The electrochemical etching process was monitored by an optical video technique. The electrochemical etching process used both ac and dc applied electrical potentials. Photoluminescence (PL), Raman spectra, and polarized light transmission microscopy have been used to characterize the implanted substrate and lift-off films. AFM has been used to monitor the surface changes after mechanical polishing, ion implantation, CVD growth and the lift-off process. This research has revealed that the parameters of ion implantation (implant species, dose and energy) dramatically affect the lift-off process. The etching mechanism and critical parameters are discussed in this work. PL spectroscopy indicated differences between the uppermost layers of the homo-epitaxial film and the lift-off interface. Three principal classes of defects have been observed: growth defects inherent in the diamond substrates (type Ib, HPHT), defects induced by the polishing process and associated stress, and point defects.

Single Crystal Epitaxial Growth of β-SiC for Device and Integrated Circuit Applications

1987 ◽  
Vol 97 ◽  
Author(s):  
J. D. Parsons
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Integrated Circuit ◽  
High Speed ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
New Approach ◽  
Growth Environment ◽  
History Of ◽  
Cvd Growth

ABSTRACTBeta SiC is an important semiconductor whose development has been slowed by synthesis difficulties. The physical and electronic properties which make β-SiC desirable for high speed and high power electronics are discussed, with special emphasis on field effect transistor (FET) applications. A history of synthesis efforts is presented to illuminate the obstacles encountered in the growth of semiconductor device quality P-SiC. A new approach to single crystal epitaxy of β-SiC, using TiC as a substrate, is described. The properties of TiC which make it a uniquely suitable substrate for β-SiC epitaxial growth are discussed, and procedures used to prepare TiC surfaces for β-SiC epitaxy are described. The growth process employed at our laboratory, chemical vapor deposition (CVD), is described, and experimental observations of the effects of the CVD growth environment on β-SiC epitaxial growth are presented. Based on these observations, we propose to synthesize β-SiC in a singlesource reaction, using molecules which decompose directly to SiC units. This contrasts with current approaches, which introduce Si and C separately, in molecules which must decompose and subsequently react to form SiC.

Production of single crystal diamond needles by a combination of CVD growth and thermal oxidation

2009 ◽  
Vol 18 (10) ◽  
pp. 1289-1293 ◽  
Author(s):  
Alexander N. Obraztsov ◽  
Petr G. Kopylov ◽  
Andrey L. Chuvilin ◽  
Natalia V. Savenko
Keyword(s):  
Single Crystal ◽  
Thermal Oxidation ◽  
Single Crystal Diamond ◽  
Cvd Growth

Substrate Engineering for CVD Growth of Single Crystal Graphene

Small Methods ◽  
2021 ◽  
pp. 2001213
Author(s):  
Ming Huang ◽  
Bangwei Deng ◽  
Fan Dong ◽  
Lili Zhang ◽  
Zheye Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Substrate Engineering ◽  
Cvd Growth

NV-Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

2018 ◽  
Vol 215 (22) ◽  
pp. 1800205 ◽  
Author(s):  
Mikhail A. Lobaev ◽  
Alexei M. Gorbachev ◽  
Sergey A. Bogdanov ◽  
Anatoly L. Vikharev ◽  
Dmitry B. Radishev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Growth Conditions ◽  
Single Crystal Diamond ◽  
Nv Center ◽  
Cvd Growth

Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on an epitaxial Ni film

Nanoscale ◽  
2019 ◽  
Vol 11 (31) ◽  
pp. 14668-14675
Author(s):  
Alexandre Budiman Taslim ◽  
Hideaki Nakajima ◽  
Yung-Chang Lin ◽  
Yuki Uchida ◽  
Kenji Kawahara ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Crystal ◽  
Growth Mechanism ◽  
Hexagonal Boron Nitride ◽  
Cvd Growth ◽  
Crystal Grains

CVD growth of epitaxially aligned, sub-millimeter h-BN grains on Ni(111)/sapphire is demonstrated with detailed investigation of the h-BN growth mechanism.

A Preparation of High Resolution Standards for Electron Microscopy. Part II

1971 ◽  
Vol 29 ◽  
pp. 160-161
Author(s):  
Akira Tanaka ◽  
David F. Harling
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Carbon Black ◽  
Single Crystal ◽  
Dark Field ◽  
Graphitized Carbon Black ◽  
Graphitized Carbon ◽  
Dark Field Imaging ◽  
Crystal Films ◽  
Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

1970 ◽  
Vol 28 ◽  
pp. 456-457
Author(s):  
L. E. Murr ◽  
G. Wong
Keyword(s):  
Single Crystal ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Rate ◽  
Flash Evaporation ◽  
Optimum Load ◽  
Single Crystal Films ◽  
Crystal Films ◽  
A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

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