NV-Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

2018 ◽  
Vol 215 (22) ◽  
pp. 1800205 ◽  
Author(s):  
Mikhail A. Lobaev ◽  
Alexei M. Gorbachev ◽  
Sergey A. Bogdanov ◽  
Anatoly L. Vikharev ◽  
Dmitry B. Radishev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Growth Conditions ◽  
Single Crystal Diamond ◽  
Nv Center ◽  
Cvd Growth

Lift -Off Process to get Free-Standing High Quality Single Crystal Diamond Films and Suspended Single Crystal Diamond Devices

2006 ◽  
Vol 956 ◽  
Author(s):  
Jie Yang ◽  
C. F. Wang ◽  
E. L. Hu ◽  
James E. Butler
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Light Transmission ◽  
Electrochemical Etching ◽  
Etching Process ◽  
Critical Parameters ◽  
Transmission Microscopy ◽  
Single Crystal Diamond ◽  
Cvd Growth ◽  
Lift Off

ABSTRACTFreestanding and suspended single crystal diamond devices, micro disks and beam structures, have been fabricated on single crystal diamond substrates using a lift-off process employing ion implantation followed by electrochemical etching. The ion implantation created subsurface damage in the diamond while the top surface was sufficiently undamaged that a subsequent homo-epitaxial diamond layer could be grown by chemical vapor deposition (CVD). After the CVD growth and patterning by lithography and reactive ion etching, the underlying damage layer was etched/removed by an electrochemical etch. Different implant ions and energies were simulated and tested to optimize the process. The electrochemical etching process was monitored by an optical video technique. The electrochemical etching process used both ac and dc applied electrical potentials. Photoluminescence (PL), Raman spectra, and polarized light transmission microscopy have been used to characterize the implanted substrate and lift-off films. AFM has been used to monitor the surface changes after mechanical polishing, ion implantation, CVD growth and the lift-off process. This research has revealed that the parameters of ion implantation (implant species, dose and energy) dramatically affect the lift-off process. The etching mechanism and critical parameters are discussed in this work. PL spectroscopy indicated differences between the uppermost layers of the homo-epitaxial film and the lift-off interface. Three principal classes of defects have been observed: growth defects inherent in the diamond substrates (type Ib, HPHT), defects induced by the polishing process and associated stress, and point defects.

Progress on Preferential Etching and Phosphorus Doping of Single Crystal Diamond

2014 ◽  
Vol 1634 ◽  
Author(s):  
Timothy A. Grotjohn ◽  
Dzung T. Tran ◽  
M. Kagan Yaran ◽  
Thomas Schuelke
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Growth Conditions ◽  
Room Temperature Resistivity ◽  
Single Crystal Diamond

ABSTRACTPhosphorus is incorporated into single crystal diamond during epitaxial growth at higher concentrations on the (111) crystallographic surface than on the (001) crystallographic surface. To form n+-type regions in diamond for semiconductor devices it is beneficial to deposit on the (111) surface. However, diamond deposition is faster and of higher quality on the (001) surface. A preferential etch method is described that forms inverted pyramids on the (001) surface of a substrate diamond crystal, which opens (111) faces for improved phosphorus incorporation. The preferential etching occurs on the surface in regions where a nickel film is deposited. The etching is performed in a microwave generated hydrogen plasma operating at 160 Torr with the substrate temperature in the range of 800-950 °C. The epitaxial growth of diamond with high phosphorus concentrations exceeding 1020 cm-3 is performed using a microwave plasma-assisted chemical vapor deposition process. Successful growth conditions were achieved with a feedgas mixture of 0.25% methane, 500 ppm phosphine and hydrogen at a pressure of 160 Torr and a substrate temperature of 950-1000°C. The room temperature resistivity of the phosphorus-doped diamond is 120-150 Ω-cm and the activation energy is 0.027 eV.

Production of single crystal diamond needles by a combination of CVD growth and thermal oxidation

2009 ◽  
Vol 18 (10) ◽  
pp. 1289-1293 ◽  
Author(s):  
Alexander N. Obraztsov ◽  
Petr G. Kopylov ◽  
Andrey L. Chuvilin ◽  
Natalia V. Savenko
Keyword(s):  
Single Crystal ◽  
Thermal Oxidation ◽  
Single Crystal Diamond ◽  
Cvd Growth

Fabrication of a Free-Standing, Synthetic, Single Crystal Diamond Plate Using Ion Implantation and Plasma-Enhanced Chemical Vapor Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
J.B. Posthill ◽  
D.P. Malta ◽  
T.P. Humphreys ◽  
G.C. Hudson ◽  
R.E. Thomas ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electrochemical Etching ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Diamond Growth ◽  
Free Standing ◽  
Diamond Plate ◽  
Single Crystal Diamond ◽  
Type Ia ◽  
Lift Off

AbstractUsing a specific combination of energetic and chemical processes we have grown homoepitaxial diamond on and lifted it off of a type Ia natural C(100) crystal. Before growth, the C(100) crystal is exposed to a self implant of 190keV energy and dose of 1E16 cm-2. Low temperature (~600°C) homoepitaxial diamond growth conditions were used that are based on water-alcohol source chemistries. To achieve layer separation (lift-off), samples were annealed to a temperature sufficient to graphitize the buried implant-damaged region. Contactless electrochemical etching was found to remove the graphite, and a transparent synthetic (100) single crystal diamond plate of 17.5μm thickness was lifted off. This free-standing diamond single crystal plate was characterized and found to be comparable to homoepitaxial films grown on unimplanted single crystal diamond.

Growth Technique For Large Area Mosaic Diamond Films†

1992 ◽  
Vol 242 ◽  
Author(s):  
R. W. Pryor ◽  
M. W. Geis ◽  
H. R. Clark
Keyword(s):  
Single Crystal ◽  
Electronic Properties ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Growth Conditions ◽  
Large Area ◽  
Si Substrates ◽  
Single Crystal Diamond ◽  
The Individual

ABSTRACTA new technique has been developed to grow semiconductor grade diamond substrates with dimensions comparable to those of currently available Si wafers. Previously, the synthetic single crystal diamond that could be grown measured only a few millimeters across, compared with single crystal Si substrates which typically are 10 to 15 cm in diameter. In the technique described, an array of features is first etched in a Si substrate. The shape of the features matches that of inexpensive, synthetic faceted diamond seeds. A diamond mosaic is then formed by allowing the diamond seeds to settle out of a slurry onto the substrate, where they become fixed and oriented in the etched features. For the experiments reported, the mosaic consists of seeds ∼ 100 μm across on 100 μm centers. A mosaic film is obtained by chemical vapor deposition of homoepitaxial diamond until the individual seeds grow together. Although these films contain low angle (<1°) grain boundaries, smooth, continuous diamond films have been obtained with electronic properties substantially better than those of polycrystalline diamond films and equivalent to those of homoepitaxial single crystal diamond films. The influence of growth conditions and seeding procedures on the crystallographic and electronic properties of these mosaic diamond films is discussed.

scholarly journals Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

2021 ◽  
Vol 1 (1) ◽  
pp. 143-149
Author(s):  
Wei Cao ◽  
Deng Gao ◽  
Hongyang Zhao ◽  
Zhibin Ma
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Lateral Growth ◽  
Single Crystal Diamond

On The Optimized Nucleation of Near-Single-Crystal Cvd Diamond Film

1995 ◽  
Vol 416 ◽  
Author(s):  
L. C. Chen ◽  
C. C. Juan ◽  
J. Y. Wu ◽  
K. H. Chen ◽  
J. W. Teng
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Morphological Evolution ◽  
Present Report ◽  
Ex Situ ◽  
Nucleation Density ◽  
Induced Current ◽  
Current Time ◽  
Single Crystal Diamond

ABSTRACTNear-single-crystal diamond films have been obtained in a number of laboratories recently. The optimization of nucleation density by using a bias-enhanced nucleation (BEN) method is believed to be a critical step. However, the condition of optimized nucleation has never been clearly delineated. In the present report, a novel quantitative technique was established to monitor the nucleation of diamond in-situ. Specifically, the induced current was measured as a function of nucleation time during BEN. The timedependence of induced current was studied under various methane concentrations as well as substrate temperatures. The optimized nucleation condition can be unambiguously determined from the current-time plot. Besides the in-situ current probe, ex-situ x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were also used to investigate the chemical and morphological evolution. Characteristic XPS and AFM features of optimized nucleation is discussed.

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