Second-Order Cumulant Approach for the Evaluation of Anisotropic Hole Mobility in Organic Semiconductors

2018 ◽  
Vol 122 (45) ◽  
pp. 25849-25857 ◽  
Author(s):  
Alessandro Landi ◽  
Raffaele Borrelli ◽  
Amedeo Capobianco ◽  
Amalia Velardo ◽  
Andrea Peluso
Keyword(s):  
Organic Semiconductors ◽  
Hole Mobility ◽  
Second Order

scholarly journals Semiconducting polymer blends that exhibit stable charge transport at high temperatures

Science ◽  
2018 ◽  
Vol 362 (6419) ◽  
pp. 1131-1134 ◽  
Author(s):  
Aristide Gumyusenge ◽  
Dung T. Tran ◽  
Xuyi Luo ◽  
Gregory M. Pitch ◽  
Yan Zhao ◽  
...  
Keyword(s):  
High Temperature ◽  
Polymer Blends ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Hole Mobility ◽  
General Strategy ◽  
Semiconducting Polymer ◽  
High Temperature Operation

Although high-temperature operation (i.e., beyond 150°C) is of great interest for many electronics applications, achieving stable carrier mobilities for organic semiconductors at elevated temperatures is fundamentally challenging. We report a general strategy to make thermally stable high-temperature semiconducting polymer blends, composed of interpenetrating semicrystalline conjugated polymers and high glass-transition temperature insulating matrices. When properly engineered, such polymer blends display a temperature-insensitive charge transport behavior with hole mobility exceeding 2.0 cm2/V·s across a wide temperature range from room temperature up to 220°C in thin-film transistors.

scholarly journals Dynamic Infrared Electro-optic Response of Soluble Organic Semiconductors in Thin Film Transistors

2013 ◽  
Vol 1501 ◽  
Author(s):  
Emily G. Bittle ◽  
Joseph W. Brill ◽  
Joseph P. Straley
Keyword(s):  
Organic Semiconductors ◽  
Field Effect Transistors ◽  
Metal Layer ◽  
Hole Mobility ◽  
Atomic Layer ◽  
Semiconductor Films ◽  
Contact Impedance ◽  
Low Frequencies ◽  
Electro Optic ◽  
Linear Differential

ABSTRACTWe use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate, bottom contact field-effect transistors (FETs.) Because of the buried metal layer effect the maximum response, due to absorption in the charge layer, will be for a dielectric film ∼ 1/4 of a wavelength (in the dielectric) (e.g. ∼ 1 micron thick in the infrared.) Results are presented for FETs prepared with both spin-cast polymer and alumina dielectrics prepared by atomic layer deposition. At low frequencies the results are fit to solutions to a non-linear differential equation describing the spatial dependence of flowing charge in the FET channel, which allows us to study multiple crystals forming across one set of drain-source contacts. FETs prepared on alumina dielectrics show interesting deviations from the model at high frequencies, possibly due to increased contact impedance.

Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors

2015 ◽  
Vol 3 (31) ◽  
pp. 8024-8029 ◽  
Author(s):  
Zhaoguang Li ◽  
Ji Zhang ◽  
Kai Zhang ◽  
Weifeng Zhang ◽  
Lei Guo ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Building Blocks ◽  
Organic Field Effect Transistors ◽  
Next Generation

Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene derivatives exhibiting a hole mobility of up to 0.25 cm2 V−1 s−1 show promise as useful building blocks to construct next-generation high performance organic semiconductors.

The role of the density of states on the hole mobility of disordered organic semiconductors

2009 ◽  
Vol 10 (5) ◽  
pp. 1037-1040 ◽  
Author(s):  
F. Torricelli ◽  
Zs. M. Kovács-Vajna ◽  
L. Colalongo
Keyword(s):  
Organic Semiconductors ◽  
Density Of States ◽  
Hole Mobility

Hole Hopping Rates in Organic Semiconductors: A Second-Order Cumulant Approach

2018 ◽  
Vol 14 (3) ◽  
pp. 1594-1601 ◽  
Author(s):  
Alessandro Landi ◽  
Raffaele Borrelli ◽  
Amedeo Capobianco ◽  
Amalia Velardo ◽  
Andrea Peluso
Keyword(s):  
Organic Semiconductors ◽  
Second Order

scholarly journals Crystallisation-enhanced bulk hole mobility in phenothiazine-based organic semiconductors

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
D. B. Shinde ◽  
Jagadish K. Salunke ◽  
Nuno R. Candeias ◽  
Francesca Tinti ◽  
Massimo Gazzano ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Hole Mobility

A new type of solid-state luminescent 2-phenylbenzo[g]furo[2,3-b]quinoxaline derivative: synthesis, photophysical characterization and transporting properties

2019 ◽  
Vol 7 (31) ◽  
pp. 9690-9697 ◽  
Author(s):  
Gang Wang ◽  
Jie Li ◽  
Yixiang Li ◽  
Dongdong Wang ◽  
Jingjing Zhang ◽  
...  
Keyword(s):  
Solid State ◽  
Organic Semiconductors ◽  
Synthesis Method ◽  
Hole Mobility ◽  
Quinoxaline Derivative ◽  
New Synthesis ◽  
New Type

We developed a new synthesis method of furo [2,3-b] quinoxaline core and report a new type of 2-phenylbenzo[g]furo [2,3-b] quinoxaline organic semiconductors, which shows 22.1% PLQY in solid powders and hole mobility of 2.58 × 10−2 cm2 V−1 s−1.

Can hydrogen bonds improve the hole-mobility in amorphous organic semiconductors? Experimental and theoretical insights

2015 ◽  
Vol 3 (44) ◽  
pp. 11660-11674 ◽  
Author(s):  
Viktorija Mimaite ◽  
Juozas Vidas Grazulevicius ◽  
Rasa Laurinaviciute ◽  
Dmytro Volyniuk ◽  
Vygintas Jankauskas ◽  
...  
Keyword(s):  
Hydrogen Bonds ◽  
Organic Semiconductors ◽  
Hole Mobility ◽  
Methyl Groups

Methoxy and methyl groups are found to improve the hole mobility via hydrogen bonds. The corresponding mechanism is shown.

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