Very Gradual and Anomalous Oxidation at the Interface of Hydrogen-Intercalated Graphene/4H-SiC(0001)

2017 ◽  
Vol 121 (47) ◽  
pp. 26389-26396
Author(s):  
Fumihiko Maeda ◽  
Makoto Takamura ◽  
Hiroki Hibino
Keyword(s):  
Anomalous Oxidation

Anomalous oxidation of sintered porous steels in the process of steam oxide treatment

1998 ◽  
Vol 40 (7) ◽  
pp. 284-288
Author(s):  
E. M. Fainshmidt ◽  
A. P. Baskakov ◽  
T. A. Pumpyanskaya ◽  
V. G. Zyryanov
Keyword(s):  
Anomalous Oxidation

Anomalous oxidation of ferritic interconnects in solid oxide fuel cells

2008 ◽  
Vol 33 (14) ◽  
pp. 3962-3969 ◽  
Author(s):  
T HORITA ◽  
H KSHIMOTO ◽  
K YAMAJI ◽  
N SAKAI ◽  
Y XIONG ◽  
...  
Keyword(s):  
Fuel Cells ◽  
Solid Oxide Fuel Cells ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Anomalous Oxidation

Ultra-Low Energy Ion Implantation of Si into HfO2 and HfSiO-based Structures for Non Volatile Memory Applications

2010 ◽  
Vol 1250 ◽  
Author(s):  
Florence Gloux ◽  
Pierre-Eugène Coulon ◽  
Jesse Groenen ◽  
Sylvie Schamm ◽  
Gerard Benassayag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thin Layers ◽  
Low Energy ◽  
Electrical Measurements ◽  
Thermal Budget ◽  
Si Nanocrystals ◽  
Non Volatile Memory ◽  
Memory Applications ◽  
Anomalous Oxidation ◽  
Post Implantation

AbstractThe fabrication of Si nanocrystals (NCs) in multilayer structures based on HfO2 and alloys for memory applications is carried out using an innovative method, the ultra-low energy (1 keV) ion implantation followed by a post-implantation annealing. Si+ ions are implanted into SiO2 thin layers deposited on top of thin HfO2-based layers. After annealing at high temperature (1050°C), the implantation leads to the formation of a two dimensional array of Si NCs at a distance from the surface larger than expected, due to an anomalous oxidation of the implanted Si. Nevertheless, the best memory windows are obtained at lower thermal budget, when no nanocrystals are present in the layer. This suggests that electrical measurements should always be correlated to structural characterization in order to understand where charge storage occurs.

Investigation of Anomalous Oxidation Behavior of SUS430 Alloy in Solid Oxide Fuel Cell Dual Atmosphere

2017 ◽  
Vol 164 (14) ◽  
pp. C945-C951 ◽  
Author(s):  
Jun Li ◽  
Dong Yan ◽  
Yingpeng Gong ◽  
Yuexing Jiang ◽  
Jin Li ◽  
...  
Keyword(s):  
Fuel Cell ◽  
Solid Oxide Fuel Cell ◽  
Oxidation Behavior ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Dual Atmosphere ◽  
Anomalous Oxidation

Oxidation behavior of bulk Ti3SiC2 at intermediate temperatures in dry air

2006 ◽  
Vol 21 (2) ◽  
pp. 402-408 ◽  
Author(s):  
H.B. Zhang ◽  
Y.C. Zhou ◽  
Y.W. Bao ◽  
J.Y. Wang
Keyword(s):  
Phase Transformation ◽  
Low Temperatures ◽  
Driving Force ◽  
Oxidation Behavior ◽  
Isothermal Oxidation ◽  
Oxide Scales ◽  
Temperature Oxidation ◽  
Dry Air ◽  
High Oxidation ◽  
Anomalous Oxidation

The isothermal oxidation behavior of bulk Ti3SiC2 at intermediate temperatures from 500 to 900 °C in flowing dry air was investigated. An anomalous oxidation with higher kinetics at lower temperatures was observed. This phenomenon resulted from the formation of microcracks in the oxide scales at low temperatures. The generation of these microcracks was caused by a phase change in the oxide products, i.e., the transformation of anatase TiO2 to rutile TiO2. This phase transformation resulted in tensile stress, which provided the driving force for the formation of the microcracks during oxidation. Despite the existence of microcracks, the intermediate-temperature oxidation of Ti3SiC2 generally obeyed the parabolic rate law and did not exhibit catastrophic destruction due to the fact that cracks occurring in the oxide layers were partially filled with amorphous SiO2. Therefore, further high oxidation kinetics was prevented.

scholarly journals Anomalous Oxidation States in Multilayers for Fuel Cell Applications

2010 ◽  
Vol 20 (16) ◽  
pp. 2664-2674 ◽  
Author(s):  
James M. Perkins ◽  
Sarah Fearn ◽  
Stuart N. Cook ◽  
Rajagopalan Srinivasan ◽  
Chris M. Rouleau ◽  
...  
Keyword(s):  
Fuel Cell ◽  
Oxidation States ◽  
Anomalous Oxidation ◽  
Anomalous Oxidation States

Isothermal Oxidation Behavior of the AISI430 Stainless Steel at High Temperature in Static Air

2011 ◽  
Vol 306-307 ◽  
pp. 95-99
Author(s):  
Bin Sun ◽  
Shou Ren Wang ◽  
Yan Jun Wang ◽  
Yong Zhi Pan
Keyword(s):  
Stainless Steel ◽  
High Temperature ◽  
Outer Layer ◽  
Oxidation Behavior ◽  
Isothermal Oxidation ◽  
Chemical Analyses ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chromium Spinel ◽  
Anomalous Oxidation

Isothermal oxidation behavior of the AISI430 stainless steel was investigated at 900°C and 950°C in air. Isothermal themogravimettric analyses were performed at high-temperature for 360ks (kilo-seconds). The microstructures of the oxide films on the stainless steel were characterized by SEM and chemical analyses were performed by EDS and X-ray diffraction. The oxide film included outer layer and inner one. The outer layer was magnetite and hematite oxides with no significant amounts of chromium and the inner one was formed by iron and chromium spinel. Significantly accelerated and anomalous oxidation was observed with the stainless steel AISI430 in air at 900°C.

ChemInform Abstract: ANOMALOUS OXIDATION OF β-PINENE

1976 ◽  
Vol 7 (3) ◽  
pp. no-no
Author(s):  
CHARLES W. JEFFORD ◽  
ALBERT ROUSSEL ◽  
SAMUEL M. EVANS
Keyword(s):  
Anomalous Oxidation

Anomalous oxidation rate of silicon implanted with very high doses of arsenic

1987 ◽  
Vol 51 (13) ◽  
pp. 1001-1003 ◽  
Author(s):  
Seong S. Choi ◽  
M. Z. Numan ◽  
W. K. Chu ◽  
E. A. Irene
Keyword(s):  
Oxidation Rate ◽  
High Doses ◽  
Anomalous Oxidation ◽  
Very High
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