Low Temperature Annealing Improves the Electrochromic and Degradation Behavior of Tungsten Oxide (WOx) Thin Films

2017 ◽  
Vol 121 (37) ◽  
pp. 20498-20506 ◽  
Author(s):  
Kunyapat Thummavichai ◽  
Liam Trimby ◽  
Nannan Wang ◽  
C. David Wright ◽  
Yongde Xia ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Tungsten Oxide ◽  
Degradation Behavior ◽  
Low Temperature Annealing

Resistance Decrease of Phosphorus Ion Implanted Poly-Si Thin Films During Low Temperature Annealing

1995 ◽  
Vol 403 ◽  
Author(s):  
H. Tokioka ◽  
Y. Masutani ◽  
Y. Goto ◽  
S. Nagao ◽  
H. Kurokawa
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Layer Thickness ◽  
Sheet Resistance ◽  
Lower Layer ◽  
Low Temperature Annealing ◽  
Two Layer Model ◽  
Temperature Activation ◽  
Resistance Decrease ◽  
Ellipsometry Data

AbstractDuring low temperature (below 450°C) annealing, the sheet resistance of phosphorus implanted poly-Si thin films (film thickness : 50nm) decreased to lE+3Ω/square. The sheet resistance after annealing decreased with annealing time and became lower when the dosing level was high enough. At the dose of 8E+14 ions/cm2 we obtained a sheet resistance of 1E+3Q/square by annealing at 450°C for 180min. We analyzed ellipsometry data assuming a two-layer model where the surface layer consists of a-Si and the lower layer of poly-Si. This analysis indicated that the surface of implanted films was amorphized by ion implantation and the amorphized layer thickness increased with dosing level. Also, it turned out that the lower poly-Si layer thickness increased from 30nm to 50nm after annealing accompanied by the conversion of a-Si layer to poly-Si layer. During annealing at low temperature, activation of phosphorus ions implanted into poly-Si and recrystallization of a-Si took place simultaneously and the sheet resistance after annealing decreased with the increase in thickness of the recrystallized region.

Influence of low-temperature annealing on the properties of Y1Ba2Cu3O7−δ thin films

1998 ◽  
Vol 24 (1) ◽  
pp. 24-25
Author(s):  
Yu. N. Drozdov ◽  
S. A. Pavlov ◽  
A. E. Parafin
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Low Temperature Annealing

Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing

2012 ◽  
Vol 56 (1) ◽  
pp. 25-31 ◽  
Author(s):  
AiLing Yang ◽  
Yun Yang ◽  
ZhenZhen Zhang ◽  
XiChang Bao ◽  
RenQiang Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Zno Thin Films ◽  
Nano Zno ◽  
Low Temperature Annealing ◽  
Defect Evolution

Orientation-Dependent Hardness in As-Deposited and Low-Temperature Annealed Ti/Ni Multilayer Thin Films

2015 ◽  
Vol 82 (1) ◽  
Author(s):  
Zhou Yang ◽  
Junlan Wang
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Multilayer Thin Films ◽  
Microstructure Modification ◽  
Low Temperature Annealing ◽  
Loading Direction ◽  
Dominant Deformation Mechanism ◽  
Pile Up ◽  
Boundary Relaxation ◽  
Deposited Films

Strong orientation dependent hardness has been observed in both as-deposited and low-temperature annealed Ti/Ni multilayer thin films. The anisotropic hardness of as-deposited films is attributed to dominant deformation mechanism switch from dislocation pile-up against the interfaces to confined layer slip (CLS) within the layers as the loading direction changes from perpendicular to parallel to the interfaces. Additional strengthening of the multilayers is achieved after low-temperature annealing without noticeable microstructure modification due to temperature-induced grain boundary relaxation. This thermal strengthening is found to increase with decreasing layer thickness and increasing annealing temperature, and is more pronounced for loading directions parallel to the interfaces.

Electrical Transport and Oxygen Disorder in YBCO

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3465-3469 ◽  
Author(s):  
J. Jung ◽  
M. M. Abdelhadi
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Electrical Transport ◽  
Linear Component ◽  
Linear Temperature Dependence ◽  
Linear Temperature ◽  
Low Temperature Annealing ◽  
Non Linear

We investigated the origin of a non-linear temperature dependence of resistivity ρab(T) in the a-b planes of YBCO, frequently observed in optimally doped twinned YBCO single crystals and thin films and in untwinned YBCO crystals along the chain direction. We performed the measurements of ρab(T) in c-axis oriented YBCO thin films that were subjected to low temperature annealing at 120–140°C (400–420 K) in argon. Our results have shown that redistribution of oxygen at a fixed oxygen content in the chain layers of YBCO with a non-linear ρab(T), leads to an increase of Tc, an increase of resistivity and a reduction of the non-linear component in ρab(T).

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