Orientation-Dependent Hardness in As-Deposited and Low-Temperature Annealed Ti/Ni Multilayer Thin Films

2015 ◽  
Vol 82 (1) ◽  
Author(s):  
Zhou Yang ◽  
Junlan Wang
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Multilayer Thin Films ◽  
Microstructure Modification ◽  
Low Temperature Annealing ◽  
Loading Direction ◽  
Dominant Deformation Mechanism ◽  
Pile Up ◽  
Boundary Relaxation ◽  
Deposited Films

Strong orientation dependent hardness has been observed in both as-deposited and low-temperature annealed Ti/Ni multilayer thin films. The anisotropic hardness of as-deposited films is attributed to dominant deformation mechanism switch from dislocation pile-up against the interfaces to confined layer slip (CLS) within the layers as the loading direction changes from perpendicular to parallel to the interfaces. Additional strengthening of the multilayers is achieved after low-temperature annealing without noticeable microstructure modification due to temperature-induced grain boundary relaxation. This thermal strengthening is found to increase with decreasing layer thickness and increasing annealing temperature, and is more pronounced for loading directions parallel to the interfaces.

Processing and Characterization of Amorphous Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2018 ◽  
Vol 775 ◽  
pp. 238-245 ◽  
Author(s):  
Thitinai Gaewdang ◽  
Ngamnit Wongcharoen
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Copper Oxide ◽  
Flow Rate ◽  
Localized States ◽  
Positive Sign ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Deposited Films

In this paper, copper oxide (CuOx) thin films with amorphous phase were prepared on glass substrates by reactive dc magnetron sputtering. The influence of the flow rate of O2 on the structural, optical and electrical properties of the as-deposited films was systematically studied. XRD revealed that the as-deposited films remained amorphous in the whole range of adjusted oxygen flow rate. Surface morphology and nanoparticle size of the films were observed by AFM. Electrical resistivity and Hall effect measurements were performed on the films with van der Pauw configuration. The positive sign of the Hall coefficient confirmed the p-type conductivity in all studied films. From temperature-dependent electrical conductivity of the films prepared at R(O2) of 1.5 sccm, it was show that three types of behavior can be expected, nearest-neighbor hopping at high temperature range (200-300 K), the Mott variable range hopping at low temperature (110-190 K) and Efros-Shklovskii variable range hopping at very low temperature (65-100 K). Some important parameters corresponding to Mott-VRH and ES-VRH like density of localized states near the Fermi level, localization length, degree of disorder, hopping distance and hopping energy were determined. These parameters would be helpful for optimizing the performance of photovoltaic applications.

Resistance Decrease of Phosphorus Ion Implanted Poly-Si Thin Films During Low Temperature Annealing

1995 ◽  
Vol 403 ◽  
Author(s):  
H. Tokioka ◽  
Y. Masutani ◽  
Y. Goto ◽  
S. Nagao ◽  
H. Kurokawa
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Layer Thickness ◽  
Sheet Resistance ◽  
Lower Layer ◽  
Low Temperature Annealing ◽  
Two Layer Model ◽  
Temperature Activation ◽  
Resistance Decrease ◽  
Ellipsometry Data

AbstractDuring low temperature (below 450°C) annealing, the sheet resistance of phosphorus implanted poly-Si thin films (film thickness : 50nm) decreased to lE+3Ω/square. The sheet resistance after annealing decreased with annealing time and became lower when the dosing level was high enough. At the dose of 8E+14 ions/cm2 we obtained a sheet resistance of 1E+3Q/square by annealing at 450°C for 180min. We analyzed ellipsometry data assuming a two-layer model where the surface layer consists of a-Si and the lower layer of poly-Si. This analysis indicated that the surface of implanted films was amorphized by ion implantation and the amorphized layer thickness increased with dosing level. Also, it turned out that the lower poly-Si layer thickness increased from 30nm to 50nm after annealing accompanied by the conversion of a-Si layer to poly-Si layer. During annealing at low temperature, activation of phosphorus ions implanted into poly-Si and recrystallization of a-Si took place simultaneously and the sheet resistance after annealing decreased with the increase in thickness of the recrystallized region.

Low-Temperature Processing Using Triple Alkoxide Precursors for Layer-Structured Perovskite Thin Films: Preparation and Characterization of Mbi2Ta2O9 (M: Ca or Ba) Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
K. Kato
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Surface Topography ◽  
Annealing Temperature ◽  
Low Temperature Processing ◽  
Deposited Films ◽  
Alkoxide Precursors

AbstractCaBi2Ta2O9 and BaBi2Ta2O9 thin films were successfully prepared by using triple alkoxide precursors such as Ca[BiTa(OC2H5)9]2 and Ba[BiTa(OC2H5)9]2, respectively. As-deposited films were amorphous and crystallized below 500°C by rapid thermal annealing in oxygen. The crystallinity improved with annealing temperature. The development of the crystal structure and surface topography of the thin films were investigated. Additionally, some electrical properties were evaluated.

Influence of low-temperature annealing on the properties of Y1Ba2Cu3O7−δ thin films

1998 ◽  
Vol 24 (1) ◽  
pp. 24-25
Author(s):  
Yu. N. Drozdov ◽  
S. A. Pavlov ◽  
A. E. Parafin
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Low Temperature Annealing

Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing

2012 ◽  
Vol 56 (1) ◽  
pp. 25-31 ◽  
Author(s):  
AiLing Yang ◽  
Yun Yang ◽  
ZhenZhen Zhang ◽  
XiChang Bao ◽  
RenQiang Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Zno Thin Films ◽  
Nano Zno ◽  
Low Temperature Annealing ◽  
Defect Evolution

Thermal Evolution of Magnetic Properties and Crystal Structure in Compositionally Modulated Al/Ni Thin Films

1991 ◽  
Vol 232 ◽  
Author(s):  
A. Waknis ◽  
E. Haftek ◽  
M. Tan ◽  
J. A. Barnard ◽  
E. Tsang
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Magnetic Properties ◽  
Thermal Evolution ◽  
Dead Layer ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
The Individual ◽  
Deposited Films

ABSTRACTPeriodic multilayer thin films of the form (xAl/yNi)n were grown by alternate deposition of pure Al and Ni using dc-magnetron sputtering. The thicknesses of the individual Al and Ni layers are given by x and y, respectively, and the total number of bilayer units is n. For this set of experiments, x was fixed at 3.5 nm while y was systematically varied from 2.4 to 154 nm. The films were tested in as-deposited and annealed states for magnetic properties using a vibrating sample magnetometer and for crystal structure by x-ray diffraction. In both the as-deposited and annealed samples the magnetization per unit volume of Ni declined as the Ni layer thickness decreased. This result can be interpreted in terms of a magnetically ‘dead’ layer at the Al/Ni interfaces. The width of the dead layer increased from 2.9 nm to 5.8 nm on annealing. Magnetic properties were correlated with crystal structure experiments by x-ray diffraction. As-deposited films yielded a Ni(111) texture. The Ni (111) peak decreased in intensity and broadened as the Ni thickness declined. Annealing produced evidence for the growth of the intermetallic NiAl3.

Electrical Transport and Oxygen Disorder in YBCO

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3465-3469 ◽  
Author(s):  
J. Jung ◽  
M. M. Abdelhadi
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Electrical Transport ◽  
Linear Component ◽  
Linear Temperature Dependence ◽  
Linear Temperature ◽  
Low Temperature Annealing ◽  
Non Linear

We investigated the origin of a non-linear temperature dependence of resistivity ρab(T) in the a-b planes of YBCO, frequently observed in optimally doped twinned YBCO single crystals and thin films and in untwinned YBCO crystals along the chain direction. We performed the measurements of ρab(T) in c-axis oriented YBCO thin films that were subjected to low temperature annealing at 120–140°C (400–420 K) in argon. Our results have shown that redistribution of oxygen at a fixed oxygen content in the chain layers of YBCO with a non-linear ρab(T), leads to an increase of Tc, an increase of resistivity and a reduction of the non-linear component in ρab(T).

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