Structural Stabilities and Electronic Properties of High-Angle Grain Boundaries in Perovskite Cesium Lead Halides

2017 ◽  
Vol 121 (3) ◽  
pp. 1715-1722 ◽  
Author(s):  
Yaguang Guo ◽  
Qian Wang ◽  
Wissam A. Saidi
Keyword(s):  
Grain Boundaries ◽  
Electronic Properties ◽  
High Angle

Measurement of the Displacement Across a Coincidence Grain Boundary

1977 ◽  
Vol 35 ◽  
pp. 124-125
Author(s):  
J. W. Matthews ◽  
W. M. Stobbs
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Stacking Fault ◽  
The Other ◽  
Measuring Technique ◽  
High Angle ◽  
Twin Boundaries ◽  
Rigid Displacement ◽  
Cubic Crystals ◽  
Lattice Displacement

Many high-angle grain boundaries in cubic crystals are thought to be either coincidence boundaries (1) or coincidence boundaries to which grain boundary dislocations have been added (1,2). Calculations of the arrangement of atoms inside coincidence boundaries suggest that the coincidence lattice will usually not be continuous across a coincidence boundary (3). There will usually be a rigid displacement of the lattice on one side of the boundary relative to that on the other. This displacement gives rise to a stacking fault in the coincidence lattice.Recently, Pond (4) and Smith (5) have measured the lattice displacement at coincidence boundaries in aluminum. We have developed (6) an alternative to the measuring technique used by them, and have used it to find two of the three components of the displacement at {112} lateral twin boundaries in gold. This paper describes our method and presents a brief account of the results we have obtained.

Observations of dislocation interactions with recrystallized grain boundaries

1988 ◽  
Vol 46 ◽  
pp. 628-629
Author(s):  
C. W. Price
Keyword(s):  
Dislocation Density ◽  
Grain Boundary ◽  
Strain Rate ◽  
Grain Boundaries ◽  
Dislocation Structure ◽  
Hot Deformation ◽  
Static Recrystallization ◽  
High Dislocation Density ◽  
High Angle ◽  
Dislocation Interactions

Little evidence exists on the interaction of individual dislocations with recrystallized grain boundaries, primarily because of the severely overlapping contrast of the high dislocation density usually present during recrystallization. Interesting evidence of such interaction, Fig. 1, was discovered during examination of some old work on the hot deformation of Al-4.64 Cu. The specimen was deformed in a programmable thermomechanical instrument at 527 C and a strain rate of 25 cm/cm/s to a strain of 0.7. Static recrystallization occurred during a post anneal of 23 s also at 527 C. The figure shows evidence of dissociation of a subboundary at an intersection with a recrystallized high-angle grain boundary. At least one set of dislocations appears to be out of contrast in Fig. 1, and a grainboundary precipitate also is visible. Unfortunately, only subgrain sizes were of interest at the time the micrograph was recorded, and no attempt was made to analyze the dislocation structure.

Determination of the lattice translation across {110} APBs in GaAs

1988 ◽  
Vol 46 ◽  
pp. 600-601
Author(s):  
D.R. Rasmussen ◽  
N.-H. Cho ◽  
C.B. Carter
Keyword(s):  
Grain Boundaries ◽  
Lower Energy ◽  
Antiphase Boundary ◽  
The Other ◽  
Boundary Structure ◽  
Interface Plane ◽  
Inversion Symmetry ◽  
High Angle ◽  
Equilibrium Distance

Domains in GaAs can exist which are related to one another by the inversion symmetry, i.e., the sites of gallium and arsenic in one domain are interchanged in the other domain. The boundary between these two different domains is known as an antiphase boundary [1], In the terminology used to describe grain boundaries, the grains on either side of this boundary can be regarded as being Σ=1-related. For the {110} interface plane, in particular, there are equal numbers of GaGa and As-As anti-site bonds across the interface. The equilibrium distance between two atoms of the same kind crossing the boundary is expected to be different from the length of normal GaAs bonds in the bulk. Therefore, the relative position of each grain on either side of an APB may be translated such that the boundary can have a lower energy situation. This translation does not affect the perfect Σ=1 coincidence site relationship. Such a lattice translation is expected for all high-angle grain boundaries as a way of relaxation of the boundary structure.

Precipitation on Low Angle Boundaries in Al-Zn-Mg

1980 ◽  
Vol 38 ◽  
pp. 374-375
Author(s):  
Diane M. Vanderwalker
Keyword(s):  
Grain Boundaries ◽  
High Strength ◽  
Boundary Structure ◽  
Aircraft Industry ◽  
Precipitate Free Zone ◽  
High Angle ◽  
Adjacent Region ◽  
Free Zone ◽  
Widespread Interest

There is a widespread interest in understanding the properties of Al-base alloys so that progress can be made toward extending their present applications in the aircraft industry. Al-Zn-Mg is precipitation hardened to gain its high strength; however, during aging the formation of heterogeneous precipitates on the grain boundaries creates a precipitate-free zone in the adjacent region. Since high angle grain boundaries are not easily characterized, it is difficult to establish a relationship between the precipitate and the boundary structure. Therefore, this study involves precipitation on low angle grain boundaries where the boundary and the precipitate can be fully analyzed.

Structure and Electronic Properties of Grain Boundaries in Earth-Abundant Photovoltaic Absorber Cu2ZnSnSe4

ACS Nano ◽  
2011 ◽  
Vol 5 (11) ◽  
pp. 8613-8619 ◽  
Author(s):  
Junwen Li ◽  
David B. Mitzi ◽  
Vivek B. Shenoy
Keyword(s):  
Grain Boundaries ◽  
Electronic Properties ◽  
Earth Abundant

scholarly journals Image Simulations of Ge Twin Boundaries.

1992 ◽  
Vol 295 ◽  
Author(s):  
Stuart Mckernan ◽  
C. Barry Carter
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
High Angle ◽  
Structural Units ◽  
Twin Boundaries ◽  
Large Unit ◽  
Unit Cells ◽  
The Individual ◽  
Image Simulations

AbstractGeneral high-angle tilt grain boundaries may be described by an arrangement of repeating structural units. Some grain-boundary defects may also be modeled by the incorporation of structural units of related boundary structures into the boundary. The simulation of these structures requires the use of prohibitively large unit cells. The possibility of modeling these boundaries by the superposition of image simulations of the individual structural units isinvestigated.

scholarly journals Electronic properties of low- Σ grain boundaries in InAs

2018 ◽  
Vol 2 (12) ◽  
Author(s):  
Altynbek Murat ◽  
Masahiko Matsubara ◽  
Binh-Minh Nguyen ◽  
Enrico Bellotti
Keyword(s):  
Grain Boundaries ◽  
Electronic Properties

EBSD Analysis of Friction Stir Welded 7136-T76 Aluminum Alloy

2013 ◽  
Vol 203-204 ◽  
pp. 258-261 ◽  
Author(s):  
Izabela Kalemba ◽  
Krzysztof Muszka ◽  
Mirosław Wróbel ◽  
Stanislaw Dymek ◽  
Carter Hamilton
Keyword(s):  
Grain Size ◽  
Aluminum Alloy ◽  
Grain Boundaries ◽  
Texture Analysis ◽  
Crystallographic Texture ◽  
High Frequency ◽  
The Other ◽  
Ebsd Analysis ◽  
High Angle ◽  
Friction Stir

This research addresses the EBSD analysis of friction stir welded 7136-T76 aluminum alloy. The objectives of this study were to evaluate the grain size and their shape, character of grain boundaries in the stirred and thermo-mechanically affected zones, both on the advancing and retreating side as well as to investigate changes in the crystallographic texture. Results of texture analysis indicate the complexity of the FSW process. The texture gradually weakens on moving from the thermo-mechanically affected zone toward the weld center. The stirred zone is characterized by very weak texture and is dominated by high angle boundaries. On the other hand, the thermo-mechanically affected zone exhibits a high frequency of low angle boundaries.

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