Structure and Electronic Properties of Grain Boundaries in Earth-Abundant Photovoltaic Absorber Cu2ZnSnSe4

ACS Nano ◽  
2011 ◽  
Vol 5 (11) ◽  
pp. 8613-8619 ◽  
Author(s):  
Junwen Li ◽  
David B. Mitzi ◽  
Vivek B. Shenoy
Keyword(s):  
Grain Boundaries ◽  
Electronic Properties ◽  
Earth Abundant

scholarly journals Electronic properties of low- Σ grain boundaries in InAs

2018 ◽  
Vol 2 (12) ◽  
Author(s):  
Altynbek Murat ◽  
Masahiko Matsubara ◽  
Binh-Minh Nguyen ◽  
Enrico Bellotti
Keyword(s):  
Grain Boundaries ◽  
Electronic Properties

Thermodynamics, kinetics and electronic properties of point defects in β-FeSi2

2019 ◽  
Vol 21 (20) ◽  
pp. 10497-10504 ◽  
Author(s):  
Jun Chai ◽  
Chen Ming ◽  
Xiaolong Du ◽  
Pengfei Qiu ◽  
Yi-Yang Sun ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Point Defects ◽  
Systematic Study ◽  
Wide Temperature Range ◽  
Semiconductor Material ◽  
Temperature Range ◽  
Earth Abundant

β-FeSi2, a semiconductor material made of two of the most earth-abundant elements, has important applications in thermoelectrics, photovoltaics and optoelectronics owing to its attractive properties such as suitable band gap and air stability over a wide temperature range. In this paper, we present a systematic study on point defects in this material.

scholarly journals Surface engineering of earth-abundant Fe catalysts for selective hydrodeoxygenation of phenolics in liquid phase

2020 ◽  
Vol 11 (23) ◽  
pp. 5874-5880 ◽  
Author(s):  
Jianghao Zhang ◽  
Junming Sun ◽  
Libor Kovarik ◽  
Mark H. Engelhard ◽  
Lei Du ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Electronic Properties ◽  
Surface Engineering ◽  
Bond Cleavage ◽  
Earth Abundant ◽  
Fe Catalysts

Tailoring the graphene-covered Fe with Cs modifies the surface electronic properties of the catalysts such that selective C–O bond cleavage of phenol is achieved in liquid phase by inhibiting the facile tautomerization followed by ring saturation.

Mapping of local electronic properties in nanostructured CMR thin films by Scanning Tunneling Microscopy (STM) and Local Conductance Map (LCMAP)

2004 ◽  
Vol 838 ◽  
Author(s):  
Sohini Kar ◽  
Barnali Ghosh ◽  
L. K. Brar ◽  
M A. Paranjape ◽  
A. K. Raychaudhuri
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Grain Boundaries ◽  
Electronic Properties ◽  
Variable Temperature ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Colossal Magnetoresistive ◽  
Spatially Resolved ◽  
Temperature Scanning

ABSTRACTWe have investigated the local electronic properties and the spatially resolved magnetoresistance of a nanostructured film of a colossal magnetoresistive (CMR) material by local conductance mapping (LCMAP) using a variable temperature Scanning Tunneling Microscope (STM) operating in a magnetic field. The nanostructured thin films (thickness ≈500nm) of the CMR material La0.67Sr0.33MnO3(LSMO) on quartz substrates were prepared using chemical solution deposition (CSD) process. The CSD grown films were imaged by both STM and atomic force microscopy (AFM). Due to the presence of a large number of grain boundaries (GB's), these films show low field magnetoresistance (LFMR) which increases at lower temperatures.The measurement of spatially resolved electronic properties reveal the extent of variation of the density of states (DOS) at and close to the Fermi level (EF) across the grain boundaries and its role in the electrical resistance of the GB. Measurement of the local conductance maps (LCMAP) as a function of magnetic field as well as temperature reveals that the LFMR occurs at the GB. While it was known that LFMR in CMR films originates from the GB, this is the first investigation that maps the local electronic properties at a GB in a magnetic field and traces the origin of LFMR at the GB.

Atomic structure and electronic properties of the ?37(610) and ?29(520) [001] tilt grain boundaries in Ge

1995 ◽  
Vol 2 (3) ◽  
Author(s):  
S. Ruvimov ◽  
J. Heydenreich ◽  
R. Scholz ◽  
K. Scheerschmidt ◽  
N.I. Bochkareva ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Electronic Properties ◽  
Atomic Structure

scholarly journals Electronic properties of CVD graphene: The role of grain boundaries, atmospheric doping, and encapsulation by ALD

2016 ◽  
Vol 253 (12) ◽  
pp. 2321-2325 ◽  
Author(s):  
Zenas A. Van Veldhoven ◽  
Jack A. Alexander-Webber ◽  
Abhay A. Sagade ◽  
Philipp Braeuninger-Weimer ◽  
Stephan Hofmann
Keyword(s):  
Grain Boundaries ◽  
Electronic Properties ◽  
Cvd Graphene

Mapping the electronic properties of individual graphene grain boundaries

2012 ◽  
Vol 100 (5) ◽  
pp. 053114 ◽  
Author(s):  
Levente Tapasztó ◽  
Péter Nemes-Incze ◽  
Gergely Dobrik ◽  
Kwon Jae Yoo ◽  
Chanyong Hwang ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Electronic Properties

Cation Coordination At Σ Grain Boundaries in TiO2 and SrTiO3, and its Effect on the Local Electronic Properties

1999 ◽  
Vol 5 (S2) ◽  
pp. 792-793
Author(s):  
J.A. Zaborac ◽  
J.P. Buban ◽  
H.O. Moltaji ◽  
S. Stemmer ◽  
N.D. Browning
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Electronic Properties ◽  
Defect Formation ◽  
Boundary Structure ◽  
Polycrystalline Materials ◽  
Dominant Effect ◽  
Grain Boundary Structure ◽  
Charge Potential ◽  
Cation Coordination

Grain boundaries have long been known to have a dominant effect on the electronic properties of polycrystalline materials. In the case of electroceramic oxides, the thermodynamics of defect formation (vacancies or interstitials, cations or anions) are usually invoked to predict the presence of a space charge potential at the grain boundaries. The relative energetics for the formation of each type of defect determines the size and sign of this potential barrier and thus, the effect that boundaries have on the overall electronic properties of the materials. However, a limitation to this continuum thermodynamics approach is that it does not consider the effect of the grain boundary structure.To investigate whether the grain boundary atomic structure can have an effect on the energetics of defect formation and hence the electronic properties, here we examine the structure of Σ5 boundaries in two systems, SrTiO3 (perovskite) and TiO2(rutile).

Structural and electronic properties of Σ7 grain boundaries in α-Al2O3

2015 ◽  
Vol 99 ◽  
pp. 16-28 ◽  
Author(s):  
Hannes Guhl ◽  
Hak-Sung Lee ◽  
Paul Tangney ◽  
W.M.C. Foulkes ◽  
Arthur H. Heuer ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Electronic Properties ◽  
Structural And Electronic Properties ◽  
Α Al2o3
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