Structure Formation and Thermal Stability of Mono- and Multilayers of Ethylene Carbonate on Cu(111): A Model Study of the Electrode|Electrolyte Interface

2016 ◽  
Vol 120 (30) ◽  
pp. 16791-16803 ◽  
Author(s):  
Maral Bozorgchenani ◽  
Maryam Naderian ◽  
Hanieh Farkhondeh ◽  
Johannes Schnaidt ◽  
Benedikt Uhl ◽  
...  
e-Polymers ◽  
2011 ◽  
Vol 11 (1) ◽  
Author(s):  
Elżbieta Chmiel-Szukiewicz

AbstractNew method of synthesis of polyetherols with 1,3-pyrimidine ring by reactions of 6-aminouracil with ethylene carbonate and propylene oxide was described. The structure of products was analyzed using the IR, 1H-NMR and MALDI-TOF spectroscopies. Some physical properties and thermal stability of polyetherols were investigated. Initial tests on the foaming of polyurethanes obtained from the polyetherols were performed. Some properties of the foams such as apparent density, absorption of water, linear dimensions stability, thermal resistance and compression strength were investigated. Obtained foams show an improved thermal stability.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

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