Structural, Electronic Band Transition and Optoelectronic Properties of p-Type Transparent Conductive CuCr1–xNixO2 Semiconductor Films

2021 ◽  
Author(s):  
Jihao Zhang ◽  
Meijie Han ◽  
Liyuan Ao ◽  
Jiaxuan Yang ◽  
Lichen Gao ◽  
...  
Keyword(s):  
Optoelectronic Properties ◽  
Semiconductor Films ◽  
Electronic Band ◽  
Band Transition ◽  
P Type

Tailored Electronic Band Gap and Valance Band Edge of Nickel Oxide via p-Type Incorporation

2021 ◽  
Vol 125 (13) ◽  
pp. 7495-7501
Author(s):  
Gang Wang ◽  
Jinju Zheng ◽  
Boyi Xu ◽  
Chaonan Zhang ◽  
Yue Zhu ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Band Gap ◽  
Band Edge ◽  
Electronic Band ◽  
Electronic Band Gap ◽  
P Type

Characterization and optoelectronic properties of p-type N-doped CuAlO2 films

2007 ◽  
Vol 90 (19) ◽  
pp. 191117 ◽  
Author(s):  
Ruei-Sung Yu ◽  
Shih-Chang Liang ◽  
Chih-Jung Lu ◽  
Du-Cheng Tasi ◽  
Fuh-Sheng Shieu
Keyword(s):  
Optoelectronic Properties ◽  
P Type

scholarly journals The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr0.95−xMg0.05]O2 Films Deposited by Reactive Magnetron Sputtering

Materials ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2376 ◽  
Author(s):  
Song-Sheng Lin ◽  
Qian Shi ◽  
Ming-Jiang Dai ◽  
Kun-Lun Wang ◽  
Sheng-Chi Chen ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Carrier Mobility ◽  
Figure Of Merit ◽  
Incident Light ◽  
Transparent Conductive Oxide ◽  
Optoelectronic Properties ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Mg Doping ◽  
P Type

CuCrO2 is one of the most promising p-type transparent conductive oxide (TCO) materials. Its electrical properties can be considerably improved by Mg doping. In this work, Cr-deficient CuCrO2 thin films were deposited by reactive magnetron sputtering based on 5 at.% Mg doping. The influence of Cr deficiency on the film’s optoelectronic properties was investigated. As the film’s composition varied, CuO impurity phases appeared in the film. The mixed valency of Cu+/Cu2+ led to an enhancement of the hybridization between the Cu3d and O2p orbitals, which further reduced the localization of the holes by oxygen. As a result, the carrier concentration significantly improved. However, since the impurity phase of CuO introduced more grain boundaries in Cu[Cr0.95−xMg0.05]O2, impeding the transport of the carrier and incident light in the film, the carrier mobility and the film’s transmittance reduced accordingly. In this work, the optimal optoelectronic performance is realized where the film’s composition is Cu[Cr0.78Mg0.05]O2. Its Haacke’s figure of merit is about 1.23 × 10−7 Ω−1.

scholarly journals Analyzing transport properties of p-type Mg2Si–Mg2Sn solid solutions: optimization of thermoelectric performance and insight into the electronic band structure

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Electronic Band Structure ◽  
Thermoelectric Performance ◽  
Electronic Band ◽  
P Type ◽  
Insight Into

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.

Control of Valence States by a Codoping Method in P-Type GaN Materials

1997 ◽  
Vol 468 ◽  
Author(s):  
T. Yamamoto ◽  
H. Katayama-Yoshtoa
Keyword(s):  
Control Method ◽  
Electronic Band Structure ◽  
Ionic Charge ◽  
Electronic Band ◽  
Valence States ◽  
Madelung Energy ◽  
Valence Control ◽  
P Type ◽  
Structure Calculations ◽  
Codoping Method

ABSTRACTWe propose a new valence control method, the “codoping method (using both n- and p-type dopants at the same time)”, for the fabrication of low-resistivity p-type GaN crystals based on the ab-initio electronic band structure calculations. We have clarified that while doping of acceptor dopants, BeGa and MgGa, leads to destabilization of the ionic charge distributions in p-type GaN crystals, doping of Sica or ON give rise to p-type doped GaN with high doping levels due to a large decrease in the Madelung energy. The codoping of the n- and p-type dopants (the ratio of their concentrations is 1:2) leads to stabilization of the ionic charge distribution inp-type GaN crystals due to a decrease in the Madelung energy, to result in an increase in the net carrier densities.

scholarly journals Thermoelectric Properties of Bi2Te3/Sb2Te3 Thin Films

2006 ◽  
Vol 514-516 ◽  
pp. 156-160 ◽  
Author(s):  
Luís M. Gonçalves ◽  
Carlos Couto ◽  
Pedro Alpuim ◽  
D. Michael Rowe ◽  
J. Higino Correia
Keyword(s):  
Laser Cooling ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Semiconductor Films ◽  
Flash Evaporation ◽  
Peltier Element ◽  
Seebeck Coefficients ◽  
Electrical Resistivities ◽  
Metal Organic ◽  
P Type

The deposition and characterization of n-type Bi2Te3 and p-type Sb2Te3 semiconductor films are reported. The films were deposited by thermal co-evaporation on a 25 µm thick polyimide (kapton) substrate. The co-evaporation method is inexpensive, simple, and reliable, when compared to other techniques that need longer time periods to prepare the starting material or require more complicated and expensive deposition equipment. Seebeck coefficients of -189 µVK-1 and +140 µVK-1 and electrical resistivities of 7.7 µ0m and 15.1 µ0m were measured at room temperature on n-type and p-type films, respectively. These values are better than those reported for films deposited by co-sputtering or electrochemical deposition, and are close to those reported for films deposited by metal-organic chemical vapour deposition or flash evaporation. Because of their high figures of merit, these films will be used for the fabrication of a micro-Peltier element, useful in temperature control and laser-cooling for telecommunications.

scholarly journals Effects of Sintering Atmosphere on the Optical, Thermal and Electrical Properties of Inkjet Printed ZnxCu(1-x)Fe2O4 Thin Films

2021 ◽  
Vol 81 (2) ◽  
pp. 25-35
Author(s):  
Lim Joon Hoong
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Optical Band Gap ◽  
Electronic Band Structure ◽  
Copper Ferrite ◽  
Electronic Band ◽  
Sintering Atmosphere ◽  
P Type

The effects of sintering atmosphere on the optical, thermal and electric properties of inkjet printed ZnxCu(1-x)Fe2O4 thin films have been investigated. The thin film samples were sintered separately in vacuum and oxygen. The obtained samples were then characterized by X-ray diffraction (XRD), optical band gap, electrical conductivity, Seebeck coefficient and thermal conductivity. XRD analysis showed that the fabricated samples have a cubic spinel structure of zinc copper ferrite regardless of the sintering atmosphere. The electrical conductivity of ZnxCu(1-x)Fe2O4 thin films sintered in oxygen was about 5 % higher compared to ZnxCu(1-x)Fe2O4 thin films sintered in vacuum. The optical band gap shows that the samples sintered in oxygen had smaller band gap compared to samples sintered in vacuum. The electronic band structure simulated through ABINIT shows ZnxCu(1-x)Fe2O4 is an indirect band gap material. A smaller electronic band gap was observed in O2 rich condition and was in agreement with the optical band gap and electrical conductivity test results. Seebeck coefficient of ZnxCu(1-x)Fe2O4 thin films sintered in oxygen remained positive , confirming charge transport by hole carries as p-type semiconductors. A change from p-type to n-type semiconductors was observed when ZnxCu(1-x)Fe2O4 thin films sintered in vacuum.

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