Structure and Properties of Heavily B and P Codoped Amorphous Silicon Quantum Dots

2021 ◽  
Author(s):  
R. Turanský ◽  
J. Brndiar ◽  
A. Pershin ◽  
Á. Gali ◽  
H. Sugimoto ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Amorphous Silicon ◽  
Structure And Properties ◽  
Silicon Quantum Dots

Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

2015 ◽  
Vol 117 (2) ◽  
pp. 024304
Author(s):  
Xixing Wen ◽  
Xiangbin Zeng ◽  
Wenjun Zheng ◽  
Wugang Liao ◽  
Feng Feng
Keyword(s):  
Quantum Dots ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Silicon Quantum Dots ◽  
Amorphous Silicon Carbide

Luminescence of Er-doped amorphous silicon quantum dots

2005 ◽  
Vol 475 (1-2) ◽  
pp. 231-234 ◽  
Author(s):  
Nae-Man Park ◽  
Tae-Youb Kim ◽  
Sang Hyeob Kim ◽  
Gun Yong Sung ◽  
Kwan Sik Cho ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Amorphous Silicon ◽  
Silicon Quantum Dots ◽  
Er Doped

scholarly journals Optical properties of amorphous silicon quantum dots (a-Si QDs) with various dot size using extended Hückel theory

2013 ◽  
Author(s):  
Setianto ◽  
Liu Kin Men ◽  
Ferry Faizal ◽  
Bambang Mukti Wibawa ◽  
Doy Hardoyo Hardjo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Silicon Quantum Dots

scholarly journals Effect of Retrapping on Thermoluminescence Peak Intensities of Small Amorphous Silicon Quantum Dots

2016 ◽  
Vol 129 (3) ◽  
pp. 362-366 ◽  
Author(s):  
N.G. Debelo ◽  
F.B. Dejene ◽  
V.N. Mal'nev ◽  
T. Senbeta ◽  
B. Mesfin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Amorphous Silicon ◽  
Silicon Quantum Dots

Preparation and Spectrial Studies of Silicon Nitride Thin Films Containing Amorphous Silicon Quantum Dots

2021 ◽  
Vol 323 ◽  
pp. 48-55
Author(s):  
Jia Xin Sun ◽  
Bing Qing Zhou ◽  
Xin Gu
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Silicon Quantum Dots ◽  
Plasma Chemical Vapor Deposition

Silicon-rich silicon nitride thin films are prepared on P-type monocrystalline silicon wafer (100) and glass substrate by plasma chemical vapor deposition with reaction gas sources SiH4 and NH3. The deposited samples are thermally annealed from 600°C to 1000°C in an atmosphere furnace filled with high purity nitrogen. The annealing time is 60 minutes. Fourier transform infrared spectroscopy (FTIR) is carried out to investigate the bonding configurations in the films. The results show that the Si-H bond and N-H bond decrease with the increase of annealing temperature, and completely disappear at the annealing temperature of 900°C. But the Si-N bond is enhanced with the increase of annealing temperature, and the blue shift occurs, then Si content in the film increases. The Raman Spectra show that the amorphous Si Raman peak appears at 480 cm-1 in the film at 700°C. The Raman spectra of the films annealed at 1000 °C is fitted with two peaks, and a peak at 497 cm -1 is found, which indicated that the Si phase in the films changed from amorphous to crystalline with the increase of annealing temperature. The experiment also analyses the luminescence properties of the samples through PL spectrum, and it is found that there are five luminescence peaks in each sample under different annealing temperature. Based on the analysis of Raman spectrum and FTIR spectrum, the PL peak of amorphous silicon quantum dots appears at the wavelength range of 525-555nm, and the other four PL peaks are all from the defect state luminescence in the thin films, and the amorphous silicon quantum dot size is calculated according to the formula.

Quantum Confinement in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride

2001 ◽  
Vol 86 (7) ◽  
pp. 1355-1357 ◽  
Author(s):  
Nae-Man Park ◽  
Chel-Jong Choi ◽  
Tae-Yeon Seong ◽  
Seong-Ju Park
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Silicon Quantum Dots

Effects of oxygen addition on electrical properties of silicon quantum dots/amorphous silicon carbide superlattice

2010 ◽  
Vol 10 (3) ◽  
pp. S435-S438 ◽  
Author(s):  
Yasuyoshi Kurokawa ◽  
Shigeru Yamada ◽  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Quantum Dots ◽  
Silicon Carbide ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Silicon Quantum Dots ◽  
Amorphous Silicon Carbide ◽  
Oxygen Addition
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