Investigation of Substrate Swell-Induced Defect Formation in Suspended Graphene upon Helium Ion Implantation

Quantum dot formation on suspended graphene nanomesh by helium ion beam milling technology

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm50988.2021.9421016 ◽

2021 ◽

Author(s):

Fayong Liu ◽

Manoharan Muruganathan ◽

Shinichi Ogawa ◽

Yukinori Morita ◽

Zhongwang Wang ◽

...

Keyword(s):

Quantum Dot ◽

Ion Beam ◽

Suspended Graphene ◽

Helium Ion ◽

Graphene Nanomesh

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Membrane folding by helium ion implantation for three-dimensional device fabrication

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2779049 ◽

2007 ◽

Vol 25 (6) ◽

pp. 2184 ◽

Cited By ~ 36

Author(s):

William J. Arora ◽

Sybren Sijbrandij ◽

Lewis Stern ◽

John Notte ◽

Henry I. Smith ◽

...

Keyword(s):

Ion Implantation ◽

Three Dimensional ◽

Device Fabrication ◽

Helium Ion

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Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

MRS Proceedings ◽

10.1557/proc-262-1061 ◽

1992 ◽

Vol 262 ◽

Author(s):

A. Uedono ◽

Y. Ujihira ◽

L. Wei ◽

Y. Tabuki ◽

S. Tanigawa ◽

...

Keyword(s):

Oxygen Vacancy ◽

Ion Implantation ◽

Defect Formation ◽

Positron Beam ◽

Low Energy ◽

Doppler Broadening ◽

Positron Energy ◽

Annealing Experiments ◽

Incident Positron ◽

Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

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Helium Ion Implantation Induced Damage in Metallic Glasses

Radiation-Induced Changes in Microstructure: 13th International Symposium (Part I) ◽

10.1520/stp33867s ◽

2008 ◽

pp. 866-866-14

Author(s):

AK Tyagi ◽

RV Nandedkar

Keyword(s):

Ion Implantation ◽

Metallic Glasses ◽

Helium Ion

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Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

Nanotechnology ◽

10.1088/1361-6528/ac40c1 ◽

2021 ◽

Author(s):

Yexin Fan ◽

ying song ◽

zongwei xu ◽

jintong wu ◽

rui zhu ◽

...

Keyword(s):

Silicon Carbide ◽

Ion Implantation ◽

Color Center ◽

Md Simulation ◽

Subsequent Annealing ◽

Atomic Scale ◽

New Method ◽

Color Centers ◽

Silicon Vacancy ◽

Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

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