Semidefective Graphene/h-BN In-Plane Heterostructures: Enhancing Interface Thermal Conductance by Topological Defects

2021 ◽  
Vol 125 (4) ◽  
pp. 2748-2760
Author(s):  
Xin Wu ◽  
Qiang Han
Keyword(s):  
Thermal Conductance ◽  
Topological Defects ◽  
Interface Thermal Conductance

scholarly journals High thermal conductive copper/diamond composites: state of the art

2020 ◽  
Vol 56 (3) ◽  
pp. 2241-2274
Author(s):  
S. Q. Jia ◽  
F. Yang
Keyword(s):  
Thermal Conductivity ◽  
Electronic Devices ◽  
Thermal Conductance ◽  
High Thermal Conductivity ◽  
Power Electronic ◽  
Practical Application ◽  
Boundary Area ◽  
Interface Characteristics ◽  
Composite Interface ◽  
Interface Thermal Conductance

Abstract Copper/diamond composites have drawn lots of attention in the last few decades, due to its potential high thermal conductivity and promising applications in high-power electronic devices. However, the bottlenecks for their practical application are high manufacturing/machining cost and uncontrollable thermal performance affected by the interface characteristics, and the interface thermal conductance mechanisms are still unclear. In this paper, we reviewed the recent research works carried out on this topic, and this primarily includes (1) evaluating the commonly acknowledged principles for acquiring high thermal conductivity of copper/diamond composites that are produced by different processing methods; (2) addressing the factors that influence the thermal conductivity of copper/diamond composites; and (3) elaborating the interface thermal conductance problem to increase the understanding of thermal transferring mechanisms in the boundary area and provide necessary guidance for future designing the composite interface structure. The links between the composite’s interface thermal conductance and thermal conductivity, which are built quantitatively via the developed models, were also reviewed in the last part.

Large effects of pressure induced inelastic channels on interface thermal conductance

2012 ◽  
Vol 101 (22) ◽  
pp. 221903 ◽  
Author(s):  
Yann Chalopin ◽  
Natalio Mingo ◽  
Jiankuai Diao ◽  
Deepak Srivastava ◽  
Sebastian Volz
Keyword(s):  
Thermal Conductance ◽  
Interface Thermal Conductance

Topological Defects at the Graphene/h-BN interface Abnormally Enhance Its Thermal Conductance

Nano Letters ◽  
2016 ◽  
Vol 16 (8) ◽  
pp. 4954-4959 ◽  
Author(s):  
Xiangjun Liu ◽  
Gang Zhang ◽  
Yong-Wei Zhang
Keyword(s):  
Thermal Conductance ◽  
Topological Defects

scholarly journals Inelastic phonon transport across atomically sharp metal/semiconductor interfaces

2021 ◽  
Author(s):  
Houfu Song ◽  
Fang Liu ◽  
Song Hu ◽  
Qinshu Li ◽  
Susu Yang ◽  
...  
Keyword(s):  
High Temperatures ◽  
Heat Dissipation ◽  
Thermal Conductance ◽  
Phonon Transport ◽  
Interface Roughness ◽  
Semiconductor Interfaces ◽  
Debye Temperatures ◽  
Sharp Interfaces ◽  
Heat Carriers ◽  
Interface Thermal Conductance

Abstract Understanding thermal transport across metal/semiconductor interfaces is crucial for heat dissipation of electronics The dominant heat carriers in non-metals, phonons, transport elastically across most interfaces, except for a few extreme cases where the two materials that formed the interface are highly dissimilar with a large difference in Debye temperature. In this work we show that even for two materials with similar Debye temperatures (Al/Si, Al/GaN), a substantial portion of phonons will transport inelastically across their interfaces at high temperatures, significantly enhancing interface thermal conductance. Moreover, we find that interface roughness strongly affects phonon transport process. For atomically sharp interfaces, phonons are allowed to transport inelastically and interface thermal conductance linearly increases at high temperatures. With increasing interface roughness, inelastic phonon transport rapidly diminishes. Our results provide new insights on phonon transport across interfaces and open up opportunities to engineering interface thermal conductance specifically for materials of relevance to microelectronics.

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