Thermally Induced Defects on WSe2

2020 ◽  
Vol 124 (28) ◽  
pp. 15337-15346 ◽  
Author(s):  
William H. Blades ◽  
Nicholas J. Frady ◽  
Peter M. Litwin ◽  
Stephen J. McDonnell ◽  
Petra Reinke
Keyword(s):  
Thermally Induced ◽  
Induced Defects

Thermally induced defects in a polycrystalline diamond layer on a tungsten carbide substrate

2009 ◽  
Vol 404 (22) ◽  
pp. 4485-4488 ◽  
Author(s):  
B.N. Masina ◽  
A. Forbes ◽  
O.M. Ndwandwe ◽  
G. Hearne ◽  
B.W. Mwakikunga ◽  
...  
Keyword(s):  
Tungsten Carbide ◽  
Polycrystalline Diamond ◽  
Thermally Induced ◽  
Diamond Layer ◽  
Induced Defects

Formation of Thermally Induced Defects in Silica Optical Material

2013 ◽  
Vol 853 ◽  
pp. 62-67
Author(s):  
Zhong Yin Xiao ◽  
Jian Xiang Wen ◽  
Wen Yun Luo ◽  
Wen Kai Wu ◽  
Ren Xiang Gong ◽  
...  
Keyword(s):  
High Temperature ◽  
Formation Process ◽  
Thermal History ◽  
Defect Formation ◽  
Annealing Process ◽  
Optical Material ◽  
Thermally Induced ◽  
Silica Material ◽  
Heating Treatment ◽  
Induced Defects

Characteristics of silica optical material largely depend on its thermal history. In this paper, formation of thermally induced defects in silica optical material is studied. The formation process of defect is analyzed in detail. The results show that there is an obvious difference in defect formation induced by heating treatment when the composition of silica optical material changes. Defect formation mainly displays as the produce process when the initial defects of the silica material are zero. However, defect formation expresses as the produce and annealing process when the initial defects of the silica material are not zero. The initial defect concentration can be decreased significantly when the silica material is heated in high temperature. At the same time, the new defect is also produced. These theoretic results are consistent with the previous experimental ones.

Photoluminescence Characterization Of Thermally-Induced Defects In Czochralski-Grown Si Wafers

1981 ◽  
Author(s):  
T. Nishino ◽  
H. Nakayama ◽  
J. Katsura ◽  
Y. Hamakawa
Keyword(s):  
Thermally Induced ◽  
Induced Defects

Thermally induced defects in silicon irradiated with fast neutrons

2009 ◽  
Vol 78 (10) ◽  
pp. S67-S70 ◽  
Author(s):  
A. Misiuk ◽  
W. Wierzchowski ◽  
K. Wieteska ◽  
P. Romanowski ◽  
J. Bak-Misiuk ◽  
...  
Keyword(s):  
Fast Neutrons ◽  
Thermally Induced ◽  
Induced Defects

Aluminum Related Thermally Induced Defects in Silicon

1991 ◽  
Vol 65-66 ◽  
pp. 247-252 ◽  
Author(s):  
N. Meilwes ◽  
J. Niklas ◽  
Johann Martin Spaeth
Keyword(s):  
Thermally Induced ◽  
Induced Defects

Surface and bulk characterization of thermally induced defects during silicon single wafer epitaxy

2002 ◽  
Vol 237-239 ◽  
pp. 1388-1393
Author(s):  
Petra Feichtinger ◽  
Mark S. Goorsky ◽  
Frank Muemmler ◽  
Steve Rickborn ◽  
Quynh Tran ◽  
...  
Keyword(s):  
Thermally Induced ◽  
Surface And Bulk Characterization ◽  
Induced Defects

Characterization of Thermally-Induced Defects in CZ–Si by Room-Temperature Photoluminescence

1982 ◽  
Vol 21 (Part 1, No. 5) ◽  
pp. 712-715 ◽  
Author(s):  
Johji Katsura ◽  
Hiroshi Nakayama ◽  
Taneo Nishino ◽  
Yoshihiro Hamakawa
Keyword(s):  
Room Temperature ◽  
Thermally Induced ◽  
Room Temperature Photoluminescence ◽  
Induced Defects

Behavior of Thermally Induced Defects in Heavily Boron-Doped Silicon Crystals

2001 ◽  
Vol 40 (Part 1, No. 3A) ◽  
pp. 1370-1374 ◽  
Author(s):  
Jeong-Min Kim ◽  
Joon-Young Choi ◽  
Hyon-Jong Cho ◽  
Hong-Woo Lee ◽  
Hak-Do Yoo
Keyword(s):  
Thermally Induced ◽  
Silicon Crystals ◽  
Boron Doped ◽  
Doped Silicon ◽  
Induced Defects
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