Photoluminescence Characterization Of Thermally-Induced Defects In Czochralski-Grown Si Wafers

1981 ◽  
Author(s):  
T. Nishino ◽  
H. Nakayama ◽  
J. Katsura ◽  
Y. Hamakawa
Keyword(s):  
Thermally Induced ◽  
Induced Defects

Surface and bulk characterization of thermally induced defects during silicon single wafer epitaxy

2002 ◽  
Vol 237-239 ◽  
pp. 1388-1393
Author(s):  
Petra Feichtinger ◽  
Mark S. Goorsky ◽  
Frank Muemmler ◽  
Steve Rickborn ◽  
Quynh Tran ◽  
...  
Keyword(s):  
Thermally Induced ◽  
Surface And Bulk Characterization ◽  
Induced Defects

Characterization of Thermally-Induced Defects in CZ–Si by Room-Temperature Photoluminescence

1982 ◽  
Vol 21 (Part 1, No. 5) ◽  
pp. 712-715 ◽  
Author(s):  
Johji Katsura ◽  
Hiroshi Nakayama ◽  
Taneo Nishino ◽  
Yoshihiro Hamakawa
Keyword(s):  
Room Temperature ◽  
Thermally Induced ◽  
Room Temperature Photoluminescence ◽  
Induced Defects

Applications of ultramicrotomy for materials characterization

1993 ◽  
Vol 51 ◽  
pp. 232-233
Author(s):  
R.T. Blackham ◽  
J.J. Haugh ◽  
C.W. Hughes ◽  
M.G. Burke
Keyword(s):  
Materials Science ◽  
Microstructural Analysis ◽  
Analytical Electron Microscopy ◽  
Austenitic Stainless Steels ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Thermally Induced ◽  
Radiation Induced ◽  
Characterization Of Materials

Essential to the characterization of materials using analytical electron microscopy (AEM) techniques is the specimen itself. Without suitable samples, detailed microstructural analysis is not possible. Ultramicrotomy, or diamond knife sectioning, is a well-known mechanical specimen preparation technique which has been gaining attention in the materials science area. Malis and co-workers and Glanvill have demonstrated the usefulness and applicability of this technique to the study of a wide variety of materials including Al alloys, composites, and semiconductors. Ultramicrotomed specimens have uniform thickness with relatively large electron-transparent areas which are suitable for AEM anaysis.Interface Analysis in Type 316 Austenitic Stainless Steel: STEM-EDS microanalysis of grain boundaries in austenitic stainless steels provides important information concerning the development of Cr-depleted zones which accompany M23C6 precipitation, and documentation of radiation induced segregation (RIS). Conventional methods of TEM sample preparation are suitable for the evaluation of thermally induced segregation, but neutron irradiated samples present a variety of problems in both the preparation and in the AEM analysis, in addition to the handling hazard.

Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

2008 ◽  
Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Ablation Process ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Electrical Phenomenon ◽  
Semiconductor Packages ◽  
Complex Semiconductor

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

Synthesis and characterization of silver nanoparticle nanocomposite thin films with thermally induced surface morphology changes

2015 ◽  
Vol 159 ◽  
pp. 118-121 ◽  
Author(s):  
Ernandes T. Tenório-Neto ◽  
Marcos R. Guilherme ◽  
Manuel E.G. Winkler ◽  
Lucio Cardozo-Filho ◽  
Stéphani C. Beneti ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Silver Nanoparticle ◽  
Synthesis And Characterization ◽  
Thermally Induced ◽  
Nanocomposite Thin Films ◽  
Morphology Changes

Thermally induced defects in a polycrystalline diamond layer on a tungsten carbide substrate

2009 ◽  
Vol 404 (22) ◽  
pp. 4485-4488 ◽  
Author(s):  
B.N. Masina ◽  
A. Forbes ◽  
O.M. Ndwandwe ◽  
G. Hearne ◽  
B.W. Mwakikunga ◽  
...  
Keyword(s):  
Tungsten Carbide ◽  
Polycrystalline Diamond ◽  
Thermally Induced ◽  
Diamond Layer ◽  
Induced Defects

Electrical characterization of sputter-deposition-induced defects in epitaxially grown n-GaAs layers

Vacuum ◽  
1995 ◽  
Vol 46 (8-10) ◽  
pp. 1087-1090 ◽  
Author(s):  
F Danie Auret ◽  
SA Goodman ◽  
G Myburg ◽  
WO Barnard
Keyword(s):  
Electrical Characterization ◽  
Sputter Deposition ◽  
Induced Defects

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

1995 ◽  
Vol 403 ◽  
Author(s):  
R. Venkatasubramanian ◽  
B. O'Quinn ◽  
J. S. Hills ◽  
M. L. Timmons ◽  
D. P. Malta
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cross Sectional ◽  
Plan View ◽  
Electron Beam Induced Current ◽  
Induced Defects

AbstractThe characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AIGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grainstructures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

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