Thickness-dependent Shell Homogeneity of ZnSe/CdSe Core/Shell Nanocrystals and Their Spectroscopic and Electron- and Hole-transfer Dynamics Properties

2020 ◽  
Vol 124 (22) ◽  
pp. 12049-12064
Author(s):  
Jun Cao ◽  
Zhong-Jie Jiang
Keyword(s):  
2015 ◽  
Vol 229 (1-2) ◽  
Author(s):  
Florian Ehrat ◽  
Thomas Simon ◽  
Jacek K. Stolarczyk ◽  
Jochen Feldmann

AbstractCdSe/CdS core-shell nanocrystals with controlled CdS shell thickness and CdSe core size were synthesized for several different values of these two parameters. The particles in aqueous dispersion were in situ decorated with Ni nanoparticles and evaluated for photocatalytic hydrogen generation capacity. The highest H


2007 ◽  
Vol 19 (7) ◽  
pp. 1626-1632 ◽  
Author(s):  
R. Tena-Zaera ◽  
A. Katty ◽  
S. Bastide ◽  
C. Lévy-Clément

2019 ◽  
Vol 295 ◽  
pp. 710-718 ◽  
Author(s):  
Nguyen Duc Quang ◽  
Truong Thi Hien ◽  
Nguyen Duc Chinh ◽  
Dahye Kim ◽  
Chunjoong Kim ◽  
...  

2018 ◽  
Vol 8 (11) ◽  
pp. 3551 ◽  
Author(s):  
Lei Zhang ◽  
Liping Zhao ◽  
Youjin Zheng

Author(s):  
Zolile Wiseman Dlamini ◽  
Sreedevi Vallabhapurapu ◽  
Olamide Abiodun Daramola ◽  
Potlaki Foster Tseki ◽  
Rui Werner Macedo Krause ◽  
...  

In this paper, we report on the resistive switching (RS) and conduction mechanisms in devices consisting of CdTe/CdSe core–shell quantum dots embedded chitosan composites active layer. Two devices with active layers sandwiched between (1) Al and Ag, and (2) ITO and Ag electrodes were studied. Both devices exhibited bipolar memory behavior with [Formula: see text] V and [Formula: see text][Formula: see text]V, for the Al-based device, while [Formula: see text] V and [Formula: see text][Formula: see text]V were observed for the ITO-based device, enabling both devices to be operated at low powers. However, the switching mechanisms of both devices were different, i.e., RS in Al device was attributed to conductive bridge mechanism, while space-charge-limited driven conduction filament attributed the switching mechanism of the ITO device. Additionally, the Al-based device showed long retention ([Formula: see text][Formula: see text]s) and a reasonable large ([Formula: see text]) ON/OFF ratio. Additionally, for this device, we also observed sweeping cycle-induced reversal of voltage polarity of the [Formula: see text] and [Formula: see text]. In contrast, we observed that increasing sweeping cycles resulted in an exponential decrease of the OFF-state resistance of the ITO-based device.


2017 ◽  
Vol 38 (5) ◽  
pp. 580-586
Author(s):  
陈知红 CHEN Zhi-hong ◽  
李钱光 LI Qian-guang ◽  
易煦农 YI Xu-nong ◽  
余华清 YU Hua-qing ◽  
熊良斌 XIONG Liang-bin

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