Effect of Low-Concentration Polymers on Crystal Growth in Molecular Glasses: A Controlling Role for Polymer Segmental Mobility Relative to Host Dynamics

2017 ◽  
Vol 121 (8) ◽  
pp. 1963-1971 ◽  
Author(s):  
Chengbin Huang ◽  
C. Travis Powell ◽  
Ye Sun ◽  
Ting Cai ◽  
Lian Yu
Keyword(s):  
Crystal Growth ◽  
Segmental Mobility ◽  
Molecular Glasses ◽  
Low Concentration

Low-Concentration Polymers Inhibit and Accelerate Crystal Growth in Organic Glasses in Correlation with Segmental Mobility

2013 ◽  
Vol 117 (35) ◽  
pp. 10334-10341 ◽  
Author(s):  
C. Travis Powell ◽  
Ting Cai ◽  
Mariko Hasebe ◽  
Erica M. Gunn ◽  
Ping Gao ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Segmental Mobility ◽  
Low Concentration ◽  
Organic Glasses

Selective Acceleration of Crystal Growth of Indomethacin Polymorphs by Low-Concentration Poly(ethylene oxide)

2017 ◽  
Vol 14 (12) ◽  
pp. 4694-4704 ◽  
Author(s):  
Qin Shi ◽  
Jie Zhang ◽  
Chen Zhang ◽  
Jing Jiang ◽  
Jun Tao ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Ethylene Oxide ◽  
Low Concentration ◽  
Poly Ethylene Oxide ◽  
Poly Ethylene

scholarly journals MECHANISM OF BORAX CRYSTALLIZATION USING CONDUCTIVITY METHOD

2010 ◽  
Vol 8 (3) ◽  
pp. 327-330
Author(s):  
Suharso Suharso
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Growth Mechanism ◽  
Spiral Growth ◽  
High Concentration ◽  
Conductivity Method ◽  
Principal Mechanism ◽  
Low Concentration ◽  
Kinetics Of ◽  
Kinetics Of Crystal Growth

The kinetics of crystal growth of borax has been studied by using conductivity method at temperature of 25 °C and at various relative supersaturations. It was found that the growth rate increases with increasing supersaturation. At low concentration, growth occurs via a spiral growth mechanism and at high concentration birth and spread is the principal mechanism operating.     Keywords: borax; growth rate; crystallization; conductivity method

Fast Surface Crystal Growth on Molecular Glasses and Its Termination by the Onset of Fluidity

2014 ◽  
Vol 118 (27) ◽  
pp. 7638-7646 ◽  
Author(s):  
Mariko Hasebe ◽  
Daniele Musumeci ◽  
C. Travis Powell ◽  
Ting Cai ◽  
Erica Gunn ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Molecular Glasses ◽  
Surface Crystal

Termination of Solid-State Crystal Growth in Molecular Glasses by Fluidity

2014 ◽  
Vol 5 (10) ◽  
pp. 1705-1710 ◽  
Author(s):  
Daniele Musumeci ◽  
C. Travis Powell ◽  
M. D. Ediger ◽  
Lian Yu
Keyword(s):  
Crystal Growth ◽  
Solid State ◽  
Molecular Glasses

Montmorillonite Dendrites

1974 ◽  
Vol 32 ◽  
pp. 454-455
Author(s):  
Necip Güven ◽  
Rodney W. Pease
Keyword(s):  
Crystal Growth ◽  
Growth Mechanism ◽  
Growth Front ◽  
Morphological Features ◽  
Dendritic Crystal ◽  
Crystal Growth Mechanism

Morphological features of montmorillonite aggregates in a large number of samples suggest that they may be formed by a dendritic crystal growth mechanism (i.e., tree-like growth by branching of a growth front).

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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