Optically Induced Electron Transfer in Mixed-Valence States: A Model Study on Electronic Transitions, Relaxation Dynamics, and Transient Absorption Spectroscopy

2019 ◽  
Vol 123 (26) ◽  
pp. 5463-5471 ◽  
Author(s):  
Fabian Glaab ◽  
Johannes G. Wehner ◽  
Christoph Lambert ◽  
Volker Engel
Author(s):  
Georgia Thornton ◽  
Ryan Phelps ◽  
Andrew Orr-Ewing

The polymerization of photoexcited N-ethylcarbazole (N-EC) in the presence of an electron acceptor begins with an electron transfer (ET) step to generate a radical cation of N-EC (N-EC+.). Here, the...


2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Peng Peng ◽  
Claude Marceau ◽  
Marius Hervé ◽  
P. B. Corkum ◽  
A. Yu. Naumov ◽  
...  

AbstractTransient absorption spectroscopy is utilized extensively for measurements of bound- and quasibound-state dynamics of atoms and molecules. The extension of this technique into the extreme ultraviolet (XUV) region with attosecond pulses has the potential to attain unprecedented time resolution. Here we apply this technique to aligned-in-space molecules. The XUV pulses are much shorter than the time during which the molecules remain aligned, typically $$<$$<100 fs. However, transient absorption is not an instantaneous probe, because long-lived coherences re-emit for picoseconds to nanoseconds. Due to dephasing of the rotational wavepacket, it is not clear if these coherences will be evident in the absorption spectrum, and whether the properties of the initial excitations will be preserved. We studied Rydberg states of N$${}_{2}$$2 and O$${}_{2}$$2 from 12 to 23 eV. We were able to determine the polarization direction of the electronic transitions, and hence identify the symmetry of the final states.


2020 ◽  
Vol 22 (24) ◽  
pp. 13456-13466
Author(s):  
Ewelina Gacka ◽  
Gotard Burdzinski ◽  
Bronisław Marciniak ◽  
Adam Kubas ◽  
Anna Lewandowska-Andralojc

Fast electron transfer from the photoexcited ZnTPPH singlet state to GO sheets was detected by ultrafast time-resolved transient absorption spectroscopy.


RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83969-83975 ◽  
Author(s):  
Palak Dugar ◽  
Mahesh Kumar ◽  
Shibin Krishna T. C. ◽  
Neha Aggarwal ◽  
Govind Gupta

Carrier relaxation dynamics through the defect levels in an epitaxial GaN/AlN/Si have been analysed on the femto–picosecond timescale, using ultrafast-transient absorption spectroscopy.


Sign in / Sign up

Export Citation Format

Share Document