Electrical Properties and Defect Chemistry of In-Doped TiO2 in Terms of the Jonker Formalism

2015 ◽  
Vol 119 (17) ◽  
pp. 4032-4040 ◽  
Author(s):  
Janusz Nowotny ◽  
Tadeusz Bak ◽  
Mihail Ionescu ◽  
Mohammad A. Alim
Keyword(s):  
Electrical Properties ◽  
Defect Chemistry ◽  
Doped Tio2

scholarly journals Electrical properties and defect chemistry of indium-doped TiO2. Thermoelectric power

Ionics ◽  
2014 ◽  
Vol 21 (7) ◽  
pp. 2019-2029 ◽  
Author(s):  
Janusz Nowotny ◽  
Mohammad A. Alim ◽  
Tadeusz Bak ◽  
Armand J. Atanacio ◽  
Anam Malik
Keyword(s):  
Electrical Properties ◽  
Thermoelectric Power ◽  
Defect Chemistry ◽  
Doped Tio2

Electrical Properties and Defect Chemistry of Indium-Doped TiO2: Electrical Conductivity

2014 ◽  
Vol 3 (10) ◽  
pp. P330-P339 ◽  
Author(s):  
Janusz Nowotny ◽  
Anam Malik ◽  
Mohammad A. Alim ◽  
Tadeusz Bak ◽  
Armand J. Atanacio
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Defect Chemistry ◽  
Doped Tio2

Site Redistribution, Partial Frozen-in Defect Chemistry, and Electrical Properties of Ba1–x(Zr,Pr)O3−δ

2016 ◽  
Vol 55 (17) ◽  
pp. 8552-8563 ◽  
Author(s):  
Isabel Antunes ◽  
Sergey Mikhalev ◽  
Glenn Christopher Mather ◽  
Vladislav Vadimovich Kharton ◽  
Fábio Gabriel Figueiras ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Defect Chemistry

Defect Chemistry and Electrical Properties of Iron-pyrite (FeS2–x)

1992 ◽  
pp. 87-92 ◽  
Author(s):  
S. Fiechter ◽  
A. Hartmann ◽  
P. Dulski ◽  
D. Jokisch ◽  
H. Tributsch
Keyword(s):  
Electrical Properties ◽  
Defect Chemistry ◽  
Iron Pyrite

Varistor Properties of (Nb,Ba)-Doped TiO2

1981 ◽  
Vol 5 ◽  
Author(s):  
M. F. Yan ◽  
W. W. Rhodes
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Defect Structure ◽  
Doped Tio2 ◽  
Resistivity Data ◽  
Oxidizing Atmosphere ◽  
Device Applications

ABSTRACTA new varistor based on TiO2 ceramic was developed. TiO2 ceramics with the dopant ranges of 0 < Nb < 2% and 0 < Ba < 2% were prepared and their electrical properties were measured. In these dopant ranges, several compositions were discovered to have useful varistor properties with a voltagecurrent nonlinearity index of α > 3. It was found that Ba dopant which segregates at grain boundaries and an oxidizing atmosphere during cooling are necessary to produce varistor properties in (Nb,Ba)-doped TiO2. Nb was introduced to decrease the TiO2 lattice resistivity to a range useful for device applications. Resistivity data were measured as functions of dopant composition and sintering atmospheres. Data were analyzed in terms of the defect structure in TiO2.

BN/NiO nanocomposites: Structural, defect chemistry and electrical properties in hydrogen gas atmosphere

2020 ◽  
Vol 46 (16) ◽  
pp. 26233-26237
Author(s):  
Kulwinder Singh ◽  
Manjot Kaur ◽  
Ishant Chauhan ◽  
Amit Awasthi ◽  
Manjeet Kumar ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Structural Defect ◽  
Defect Chemistry ◽  
Hydrogen Gas ◽  
Gas Atmosphere

Structural and electrical properties of Li-doped TiO2 rutile ceramics

2015 ◽  
Vol 41 (5) ◽  
pp. 6281-6285 ◽  
Author(s):  
Román Alvarez Roca ◽  
Fidel Guerrero ◽  
José A. Eiras ◽  
J.D.S. Guerra
Keyword(s):  
Electrical Properties ◽  
Doped Tio2 ◽  
Structural And Electrical Properties ◽  
Tio2 Rutile

scholarly journals Investigation on the electrical properties of anatase and rutile Nb-doped TiO2 by GGA(+U)

2014 ◽  
Vol 63 (15) ◽  
pp. 157101
Author(s):  
Yang Zhen-Hui ◽  
Wang Ju ◽  
Liu Yong ◽  
Wang Kang-Kai ◽  
Su Ting ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Doped Tio2
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