scholarly journals Investigation on the electrical properties of anatase and rutile Nb-doped TiO2 by GGA(+U)

2014 ◽  
Vol 63 (15) ◽  
pp. 157101
Author(s):  
Yang Zhen-Hui ◽  
Wang Ju ◽  
Liu Yong ◽  
Wang Kang-Kai ◽  
Su Ting ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Doped Tio2

Varistor Properties of (Nb,Ba)-Doped TiO2

1981 ◽  
Vol 5 ◽  
Author(s):  
M. F. Yan ◽  
W. W. Rhodes
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Defect Structure ◽  
Doped Tio2 ◽  
Resistivity Data ◽  
Oxidizing Atmosphere ◽  
Device Applications

ABSTRACTA new varistor based on TiO2 ceramic was developed. TiO2 ceramics with the dopant ranges of 0 < Nb < 2% and 0 < Ba < 2% were prepared and their electrical properties were measured. In these dopant ranges, several compositions were discovered to have useful varistor properties with a voltagecurrent nonlinearity index of α > 3. It was found that Ba dopant which segregates at grain boundaries and an oxidizing atmosphere during cooling are necessary to produce varistor properties in (Nb,Ba)-doped TiO2. Nb was introduced to decrease the TiO2 lattice resistivity to a range useful for device applications. Resistivity data were measured as functions of dopant composition and sintering atmospheres. Data were analyzed in terms of the defect structure in TiO2.

scholarly journals Electrical properties and defect chemistry of indium-doped TiO2. Thermoelectric power

Ionics ◽  
2014 ◽  
Vol 21 (7) ◽  
pp. 2019-2029 ◽  
Author(s):  
Janusz Nowotny ◽  
Mohammad A. Alim ◽  
Tadeusz Bak ◽  
Armand J. Atanacio ◽  
Anam Malik
Keyword(s):  
Electrical Properties ◽  
Thermoelectric Power ◽  
Defect Chemistry ◽  
Doped Tio2

Structural and electrical properties of Li-doped TiO2 rutile ceramics

2015 ◽  
Vol 41 (5) ◽  
pp. 6281-6285 ◽  
Author(s):  
Román Alvarez Roca ◽  
Fidel Guerrero ◽  
José A. Eiras ◽  
J.D.S. Guerra
Keyword(s):  
Electrical Properties ◽  
Doped Tio2 ◽  
Structural And Electrical Properties ◽  
Tio2 Rutile

The effect of CO2 gas adsorption on the electrical properties of Fe doped TiO2 films

2017 ◽  
Vol 524 ◽  
pp. 17-21 ◽  
Author(s):  
Diana Mardare ◽  
Catalin Adomnitei ◽  
Daniel Florea ◽  
Dumitru Luca ◽  
Abdullah Yildiz
Keyword(s):  
Electrical Properties ◽  
Gas Adsorption ◽  
Tio2 Films ◽  
Co2 Gas ◽  
Doped Tio2

Microstructure and Electrical Properties of Nd2O3-Doped TiO2-Ta2O5-Based Capacitor-Varistor Ceramics

2010 ◽  
Vol 160-162 ◽  
pp. 348-352 ◽  
Author(s):  
Tian Guo Wang ◽  
Qun Qin ◽  
Dong Jian Zhou
Keyword(s):  
Dielectric Properties ◽  
Electrical Properties ◽  
Crystal Lattice ◽  
Breakdown Voltage ◽  
Low Voltage ◽  
Electrical Characteristics ◽  
Electrical Behavior ◽  
Optimal Doping ◽  
Doped Tio2 ◽  
Electrical Permittivity

A low-voltage TiO2 capacitor-varistor ceramics doped with Ta2O5 and Nd2O3 was systematically researched. The effect of Nd2O3 on the microstructure, nonlinear electrical properties, and dielectric properties of TiO2-based ceramics was investigated. It was found that an optimal doping composition of 99.20 mol% TiO2-0.10 mol%Ta2O5-0.7 mol% Nd2O3 was obtained with low breakdown voltage of 8.5 v/mm, high nonlinear constant of 4.0, ultrahigh electrical permittivity of 1.07× 105 and low tanδ of 0.39. In view of these electrical characteristics, the ceramics of 99.20 mol% TiO2-0.10 mol%Ta2O5-0.7 mol% Nd2O3 is a viable candidate for capacitor-varistor functional devices. The theory of defects in the crystal lattice was introduced to explain the nonlinear electrical behavior of the Nd2O3-doped TiO2-based varistor ceramics.

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