Strategic C to N Replacement in β-Peptides: Atomic Level Control of Helical Folding

2018 ◽  
Vol 83 (15) ◽  
pp. 8793-8800 ◽  
Author(s):  
Valérie Declerck ◽  
David J. Aitken
Keyword(s):  
Atomic Level ◽  
Level Control ◽  
Helical Folding

Atomic level control of pattern fidelity during SAC etch

2021 ◽  
Author(s):  
Mingmei Wang ◽  
Du Zhang ◽  
Shinya Morikita ◽  
Yanxiang Shi ◽  
Hojin Kim ◽  
...  
Keyword(s):  
Atomic Level ◽  
Level Control

Digital Electrochemical Etching of Compound Semiconductors

1991 ◽  
Vol 237 ◽  
Author(s):  
Q. Paula Lei ◽  
John L. Stickney
Keyword(s):  
Electrochemical Cell ◽  
Electrochemical Etching ◽  
Compound Semiconductors ◽  
Atomic Layer ◽  
Atomic Level ◽  
Level Control ◽  
Square Wave ◽  
Etching Method ◽  
Cdte Substrate ◽  
Initial Results

AbstractThe principles for an electrochemical digital etching method for compound semiconductors are described and initial results reported. The method is designed to allow atomic level control over the etching process, resulting in the removal of a bilayer of the compound for each cycle. An atomic layer of one element is removed at one potential and then an atomic layer of the second element is removed at a second potential to complete one cycle. The results reported here are for the etching of CdTe. For CdTe, Te is stripped by reduction to Te2- while Cd is stripped by oxidation to Cd2+. Underpotentials are chosen so that only the top atomic layer of an element is removed. Potentials sufficient to strip the elemėnt from the bulk of the CdTe substrate are avoided. Application of the method should involve the use of a simple electrochemical cell, with solution convection. The substrate is placed in the cell and a square wave applied, where each cycle results in the dissolution of a bilayer of the compound. The two potentials of the square wave correspond to underpotential stripping potentials for Cd and Te respectively. Directions for the future development of this etching method are discussed.

Atomic-level control of the thermoelectric properties in polytypoid nanowires

2011 ◽  
Vol 2 (4) ◽  
pp. 706 ◽  
Author(s):  
Sean C. Andrews ◽  
Melissa A. Fardy ◽  
Michael C. Moore ◽  
Shaul Aloni ◽  
Minjuan Zhang ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Atomic Level ◽  
Level Control

Atomic Level Control in Crystal Growth Utilizing Reconstruction of the Surface Superstructure

1991 ◽  
Vol 222 ◽  
Author(s):  
Takashi Fuyuki ◽  
Tatsuo Yoshinobu ◽  
Hiroyuki Matsunami
Keyword(s):  
Thermal Decomposition ◽  
Crystal Growth ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Fixed Number ◽  
Atomic Level ◽  
Crystal Quality ◽  
Level Control ◽  
Single Crystalline ◽  
Subsequent Period

ABSTRACTA novel mechanism of atomic level control in crystal growth utilizing reconstruction of surface superstructures is proposed. We have found a distinguished feature of surface reconstruction during crystal growth of 3C-SiC using an alternate gas molecular beam supply of Si2H6 and C2H2. When Si2H6 is supplied, S atoms generated by thermal decomposition adsorb on the surface constructing superstructures. A fixed number of Si atoms forming surface superstructures can react with C2H2 yielding single crystalline 3C-SiC growth in the subsequent period, which realizes atomic level control in epitaxy of 3C-SiC. The reconstruction sequence is analyzed based on RHEED observations, and the obtained crystal quality is discussed.

Atomic-Level Control during Film Growth under Highly Kinetically Constrained Conditions: H Mediation and Ultrahigh Doping during Si1–X Gex Gas-Source Epitaxy

MRS Bulletin ◽  
2001 ◽  
Vol 26 (10) ◽  
pp. 777-789 ◽  
Author(s):  
J.E. Greene
Keyword(s):  
Thin Film ◽  
Materials Science ◽  
Film Growth ◽  
Atomic Level ◽  
Level Control ◽  
Film Properties ◽  
Gas Source ◽  
Control Film ◽  
Constrained Conditions

We are living in the golden era of materials science. To cite but one example, consider the field of thin-film physics. Crystal growers have been moving inexorably closer to being able to deposit layers and hence to control film properties on an atom-by-atom basis. We are nearing an era in which it will be possible to deposit “designer” materials with a specified set of properties.

Atomic level control in gas source MBE growth of cubic SiC

1990 ◽  
Vol 99 (1-4) ◽  
pp. 520-524 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Michiaki Nakayama ◽  
Hiromu Shiomi ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Atomic Level ◽  
Level Control ◽  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Development of Gating Nanopores for Next-Generation DNA Sequencing Using Mechanically Controllable Break Junctions

2011 ◽  
Author(s):  
Masateru Taniguchi ◽  
Tomoji Kawai
Keyword(s):  
Microfluidic Channel ◽  
Atomic Level ◽  
Break Junction ◽  
Level Control ◽  
Electrode Gap ◽  
Break Junctions ◽  
Next Generation Dna Sequencing ◽  
Single Atoms ◽  
Dna Molecule ◽  
The Individual

We have developed two types of devices—vertical and parallel—for incorporating a microfluidic channel into a gating nanopore. The vertical device consists of a single nanogap electrode with a nanopore perpendicular to the surface of a silicon substrate. The parallel device is similar, except the nanopore is parallel to the surface of the substrate. Furthermore, while the vertical device was fabricated using nanofabrication technologies, the parallel device was fabricated using a mechanically controllable break junction that enables atomic-level control of the electrode gap; hence, measurement of single atoms and molecules is possible. Both devices can identify single gold nanoparticles passing through them by measuring the strength of their electrical signals. The parallel device can also identify the individual nucleotides in a DNA molecule.

Atomic-Level Control of the Domain Wall Velocity in Ultrathin Magnets by Tuning of Exchange Interactions

2009 ◽  
Vol 103 (13) ◽  
Author(s):  
A. Stupakiewicz ◽  
E. Y. Vedmedenko ◽  
A. Fleurence ◽  
T. Maroutian ◽  
P. Beauvillain ◽  
...  
Keyword(s):  
Domain Wall ◽  
Exchange Interactions ◽  
Atomic Level ◽  
Level Control ◽  
Wall Velocity ◽  
Domain Wall Velocity

Atomic-level imaging of the surface structure of Ag2O

1984 ◽  
Vol 42 ◽  
pp. 656-657
Author(s):  
William Krakow
Keyword(s):  
High Vacuum ◽  
Atomic Level ◽  
Ultra High Vacuum ◽  
Research Groups ◽  
Resolution Electron ◽  
Surface Reconstructions ◽  
Order Of Magnitude ◽  
High Resolution Electron Microscope ◽  
Saturated Structure ◽  
Transmission And Reflection

In recent years electron microscopy has been used to image surfaces in both the transmission and reflection modes by many research groups. Some of this work has been performed under ultra high vacuum conditions (UHV) and apparent surface reconstructions observed. The level of resolution generally has been at least an order of magnitude worse than is necessary to visualize atoms directly and therefore the detailed atomic rearrangements of the surface are not known. The present author has achieved atomic level resolution under normal vacuum conditions of various Au surfaces. Unfortunately these samples were exposed to atmosphere and could not be cleaned in a standard high resolution electron microscope. The result obtained surfaces which were impurity stabilized and reveal the bulk lattice (1x1) type surface structures also encountered by other surface physics techniques under impure or overlayer contaminant conditions. It was therefore decided to study a system where exposure to air was unimportant by using a oxygen saturated structure, Ag2O, and seeking to find surface reconstructions, which will now be described.

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