scholarly journals Optimization of the Growth Conditions for High Quality CH3NH3PbBr3 Hybrid Perovskite Single Crystals

2020 ◽  
Vol 20 (3) ◽  
pp. 1665-1672 ◽  
Author(s):  
Smaïl Amari ◽  
Jean-Marie Verilhac ◽  
Eric Gros D’Aillon ◽  
Alain Ibanez ◽  
Julien Zaccaro
Keyword(s):  
Single Crystals ◽  
Growth Conditions ◽  
High Quality ◽  
Hybrid Perovskite

Single-Crystalline Nanosheets of Hybrid Perovskite Fabricated by a Vapor-Solution Sequential Deposition Route

2019 ◽  
Vol 19 (6) ◽  
pp. 3669-3672
Author(s):  
Boya Zhao ◽  
Jie Liu ◽  
Zhi-Hua Li ◽  
Yao-Xuan Chen ◽  
Jie Ding ◽  
...  
Keyword(s):  
Single Crystals ◽  
Single Crystal Growth ◽  
Good Reproducibility ◽  
High Quality ◽  
Inorganic Hybrid ◽  
Single Crystalline ◽  
Sequential Deposition ◽  
Promising Strategy ◽  
Hybrid Perovskite ◽  
Crystallization Conditions

Organic–inorganic hybrid perovskite single crystals have attracted much attention due to their superior optoelectronic properties. Herein, we report a facile vapor-solution sequential route to prepare single-crystalline nanosheets of hybrid lead triiodide perovskite. It is found that this two-step deposition is able to fabricate sizeable high-quality single-crystalline nanosheets with no need of delicate control of crystallization conditions such as concentration or temperature for normal single crystal growth. The resulting perovskite nanosheets show good reproducibility and single crystallinity with bright and uniform photoluminescence. Our study provides a promising strategy for scalable fabrication of perovskite single crystals with great potential in optoelectronic applications.

Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy

2008 ◽  
Vol 600-603 ◽  
pp. 71-74 ◽  
Author(s):  
Didier Chaussende ◽  
Frédéric Mercier ◽  
Roland Madar ◽  
Michel Pons
Keyword(s):  
High Temperature ◽  
Comparative Study ◽  
Single Crystals ◽  
Growth Conditions ◽  
High Rate ◽  
High Quality ◽  
Bulk Growth ◽  
Stable Growth ◽  
Very High

We have investigated through birefringence microscopy, a set of 3C-SiC crystals grown with the CF-PVT process, starting from different seeds and under different growth conditions. Through self nucleation experiments, the stable growth of very high quality 3C-SiC crystals at high temperature (2100°C) and at high rate (roughly 0.2 mm/h) is demonstrated. The possibility to develop bulk growth of 3C-SiC crystals is discussed.

scholarly journals High-quality bulk hybrid perovskite single crystals within minutes by inverse temperature crystallization

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Makhsud I. Saidaminov ◽  
Ahmed L. Abdelhady ◽  
Banavoth Murali ◽  
Erkki Alarousu ◽  
Victor M. Burlakov ◽  
...  
Keyword(s):  
Single Crystals ◽  
Inverse Temperature ◽  
High Quality ◽  
Hybrid Perovskite ◽  
Temperature Crystallization

DVT Grown GeSe Single Crystals and their Thermal Parameters in N2

2013 ◽  
Vol 665 ◽  
pp. 8-14
Author(s):  
Ruchita R. Patel ◽  
G.K. Solanki ◽  
N.N. Gosai ◽  
Rahul B. Patel
Keyword(s):  
Activation Energy ◽  
Kinetic Parameters ◽  
Single Crystals ◽  
Thermal Characteristics ◽  
Growth Conditions ◽  
Photon Absorption ◽  
Stable Operation ◽  
High Quality ◽  
Thermoanalytical Techniques ◽  
Constant Heating

Most of the applications of semiconductors involve either photon absorption to form free carriers (photodetectors or solar cells) or the formation of photons by free carrier recombination (light emittiing diodes or lasers). Both kinds of applications require high quality single crystals having desirable dimensions, devoid of defects, grain boundaries, or impurities that act as electron scatterers, traps and non radiative recombination centers. As a consequence of the requirement of high quality, fabrication and growth conditions for the semiconductors must be carefully controlled for most applications. Hence single crystals of GeSe were grown by Direct Vapor Transport (DVT) technique, in a two zone horizontal furnace with temperature difference of 50 K between growth and source zones. The material crystallizes in the form of shining gray and platelets like crystals at the end of growth cycles. Thermogravimetric analysis (TGA) has been used for many years to evaluate thermal stability of material as it will determine the range of stable operation for a device made up out of these materials under investigation. Thermal characteristics of GeSe crystals were studied employing thermoanalytical techniques, viz. TGA and DTA. Thermal analysis experiments were carried out with constant heating rate of 10 °C/ min in N2. The objective of this study is to determine activation energy and other kinetic parameters of GeSe crystals. Broido and Coats-Redfern (C-R) methods are used to evaluate different kinetic parameters of GeSe crystals viz. activation energy, entropy, enthalpy, Gibbs mean free energy etc.

A TECHNIQUE FOR THE GROWTH OF HIGH QUALITY SINGLE CRYSTALS OF ICE

1987 ◽  
Vol 48 (C1) ◽  
pp. C1-595-C1-598 ◽  
Author(s):  
M. OHTOMO ◽  
S. AHMAD ◽  
R. W. WHITWORTH
Keyword(s):  
Single Crystals ◽  
High Quality

scholarly journals Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
High Performance ◽  
Group Iv ◽  
X Ray Diffraction ◽  
High Quality ◽  
Practical Applications ◽  
Large Size ◽  
Growth Method ◽  
Polarized Raman

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

Growth from solution-melt in KCl and properties of high-quality low-Tc phase (2 2 0 1) single crystals

1994 ◽  
Vol 91 (8) ◽  
pp. 615-619 ◽  
Author(s):  
J.I. Gorina ◽  
G.A. Kaljushnaia ◽  
V.I. Ktitorov ◽  
V.P. Martovitsky ◽  
V.V. Rodin ◽  
...  
Keyword(s):  
Single Crystals ◽  
Phase 2 ◽  
High Quality ◽  
Growth From Solution

Photoluminescence studies of high-quality ZnO single crystals by hydrothermal method

2006 ◽  
Vol 376-377 ◽  
pp. 745-748 ◽  
Author(s):  
M. Yoneta ◽  
K. Yoshino ◽  
M. Ohishi ◽  
H. Saito
Keyword(s):  
Single Crystals ◽  
Hydrothermal Method ◽  
High Quality ◽  
Photoluminescence Studies

Thermal conductivity due to magnons in high-quality single crystals of the two-leg spin-ladder system (Ca,Sr,La)14Cu24O41

2013 ◽  
Vol 154 ◽  
pp. 60-63 ◽  
Author(s):  
K. Naruse ◽  
T. Kawamata ◽  
M. Ohno ◽  
Y. Matsuoka ◽  
K. Kumagai ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Single Crystals ◽  
Spin Ladder ◽  
High Quality ◽  
Ladder System

Growth of high-quality transparent SrB4O7 single crystals with high degradation resistance for DUV laser application

2018 ◽  
Vol 11 (12) ◽  
pp. 125501 ◽  
Author(s):  
Yasunori Tanaka ◽  
Keita Shikata ◽  
Ryota Murai ◽  
Yoshinori Takahashi ◽  
Masayuki Imanishi ◽  
...  
Keyword(s):  
Single Crystals ◽  
Laser Application ◽  
High Quality
Sign in / Sign up

Export Citation Format

Share Document