Structure Evolution of CH3NH3PbBr3 Single Crystal Grown in N,N-Dimethylformamide Solution

2018 ◽  
Vol 18 (5) ◽  
pp. 3132-3137 ◽  
Author(s):  
Feng Chen ◽  
Chunxiang Xu ◽  
Qingyu Xu ◽  
Yizhi Zhu ◽  
Zhu Zhu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Structure Evolution ◽  
Dimethylformamide Solution

Electric field-induced crack growth and domain-structure evolution for [100]- and [101]-oriented 72%Pb(Mg1/3Nb2/3) O3–28%PbTiO3 ferroelectric single crystals

2008 ◽  
Vol 23 (12) ◽  
pp. 3387-3395 ◽  
Author(s):  
F. Fang ◽  
W. Yang ◽  
F.C. Zhang ◽  
H. Qing
Keyword(s):  
Electric Field ◽  
Crack Propagation ◽  
Single Crystal ◽  
Single Crystals ◽  
Crack Growth ◽  
Domain Structure ◽  
Boundary Structure ◽  
Structure Evolution ◽  
In Situ Observation ◽  
Oriented Single Crystal

In situ observation of the electrically induced crack growth and domain-structure evolution is carried out for [100]- and [101]-oriented 72%Pb(Mg1/3Nb2/3)O3–28% PbTiO3 (PMN–PT 72/28) ferroelectric single crystals under static (poling) and alternating electric fields. On the same poling electric field, domains are in the stable engineered domain state where four equivalent polarization variants coexist for [100]-oriented single crystal, while parallel lines representing the 71° domain boundaries appear for [101]-oriented one. Under the same cyclic electric field, the [100]-oriented single crystal shows much higher crack propagation resistance than that of a [101]-oriented crystal. Apart from the material aspects, such as crystallographic fracture anisotropy and non-180° domain boundary structure, crack boundary condition plays an important role in determining the crack propagation behavior.

Electric field induced phase transition and domain structure evolution in (Pb, La)(Zr, Sn, Ti)O3 single crystal

2015 ◽  
Vol 107 (7) ◽  
pp. 072909 ◽  
Author(s):  
Jinghan Gao ◽  
Qiang Li ◽  
Yuanyuan Li ◽  
Fangping Zhuo ◽  
Qingfeng Yan ◽  
...  
Keyword(s):  
Phase Transition ◽  
Electric Field ◽  
Single Crystal ◽  
Domain Structure ◽  
Structure Evolution

Metal Bonding in SiC Based Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 781-784 ◽  
Author(s):  
Igor Matko ◽  
Bernard Chenevier ◽  
Roland Madar ◽  
H. Roussel ◽  
Stephane Coindeau ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Structure Evolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Bonding ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Single Crystal Sic

QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. The structure evolution of metal bonding (W-Si silicide) layer has been investigated by Transmission Electron Microscopy and X-ray diffraction. Results indicate that the metal bonding film is made of W5Si3. The film is discontinuous and strained. Annealing releases stress at least partially.

scholarly journals In situ visualization of domain structure evolution during field cooling in 0.67PMN-0.33PT single crystal

2017 ◽  
Vol 256 ◽  
pp. 012025 ◽  
Author(s):  
A D Ushakov ◽  
A A Esin ◽  
D S Chezganov ◽  
A P Turygin ◽  
A R Akhmatkhanov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Domain Structure ◽  
Structure Evolution ◽  
In Situ Visualization ◽  
Field Cooling
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