Crystal Morphology and Growth in Annealed Rubrene Thin Films

2016 ◽  
Vol 16 (8) ◽  
pp. 4720-4726 ◽  
Author(s):  
Thomas R. Fielitz ◽  
Russell J. Holmes
Keyword(s):  
Thin Films ◽  
Crystal Morphology

Imaging of Crystal Morphology and Molecular Simulations of Surface Energies in Pentacene Thin Films

2006 ◽  
Vol 110 (12) ◽  
pp. 6066-6071 ◽  
Author(s):  
Lawrence F. Drummy ◽  
Paul K. Miska ◽  
David Alberts ◽  
Nuram Lee ◽  
David C. Martin
Keyword(s):  
Thin Films ◽  
Crystal Morphology ◽  
Molecular Simulations ◽  
Surface Energies

Relationship between crystal morphology and photoluminescence in polynanocrystalline lead sulfide thin films

2010 ◽  
Vol 130 (10) ◽  
pp. 1849-1856 ◽  
Author(s):  
S. Kaci ◽  
A. Keffous ◽  
M. Trari ◽  
O. Fellahi ◽  
H. Menari ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Sulfide ◽  
Crystal Morphology

Crystal morphology and nucleation in thin films of amorphous Te alloys used for phase change recording

2005 ◽  
Vol 98 (5) ◽  
pp. 054902 ◽  
Author(s):  
J. A. Kalb ◽  
C. Y. Wen ◽  
Frans Spaepen ◽  
H. Dieker ◽  
M. Wuttig
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Crystal Morphology

Effects of Crystal Morphology on Singlet Exciton Fission in Diketopyrrolopyrrole Thin Films

2016 ◽  
Vol 120 (7) ◽  
pp. 1357-1366 ◽  
Author(s):  
Patrick E. Hartnett ◽  
Eric A. Margulies ◽  
Catherine M. Mauck ◽  
Stephen A. Miller ◽  
Yilei Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Morphology ◽  
Singlet Exciton ◽  
Singlet Exciton Fission

scholarly journals Gas Blow Coating: A Deposition Technique To Control the Crystal Morphology in Thin Films of Organic Semiconductors

ACS Omega ◽  
2019 ◽  
Vol 4 (7) ◽  
pp. 11657-11662 ◽  
Author(s):  
Jincheng Tong ◽  
Amadou Doumbia ◽  
Adriana Alieva ◽  
Michael L. Turner ◽  
Cinzia Casiraghi
Keyword(s):  
Thin Films ◽  
Organic Semiconductors ◽  
Crystal Morphology ◽  
Deposition Technique

Effect of KCl on Crystal Morphology of Electrodepisited Cu2O Thin Films

2011 ◽  
Vol 239-242 ◽  
pp. 2827-2830 ◽  
Author(s):  
Xiao Jiao Yu ◽  
Xin Ming Li ◽  
Qian Yang
Keyword(s):  
Thin Films ◽  
Particle Size ◽  
Surface Morphology ◽  
Electrochemical Deposition ◽  
Crystal Morphology ◽  
Size Control ◽  
Preferred Orientation ◽  
Regular Octahedron ◽  
Particle Size Control ◽  
Working Electrode

Different morphology of Cu2O crystals were fabricated by electrochemical deposition using ITO and ITO/nano-TiO2 as working electrode. The effect of different KCl concentrations on the microstructure and surface morphology of Cu2O thin films were studied and the morphology controlled mechanism was also discussed. When the concentration of KCl was 7mmol/L, the shape of Cu2O crystals evolved from dentrite to similar cube on the ITO matrix. When the concentration of KCl was 5mmol/L, the shape of Cu2O crystals evolves from regular octahedron ({111} preferred orientation) to truncated cube ({100} preferred orientation) on the ITO/nano-TiO2 matrix. The results also indicate that the substrates played a key role in the particle size control.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

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