Demonstration of Hexagonal Phase Silicon Carbide Nanowire Arrays with Vertical Alignment

Lunet E. Luna; Colin Ophus; Jonas Johansson; Roya Maboudian; Carlo Carraro

doi:10.1021/acs.cgd.6b00203

Catalyst-Free Growth of Vertical Alignment ZnO Nanowire Arrays by a Two-Stage Process

The Journal of Physical Chemistry C ◽

10.1021/jp908114p ◽

2009 ◽

Vol 113 (52) ◽

pp. 21572-21576 ◽

Cited By ~ 19

Author(s):

Liang-Yih Chen ◽

Shu-Han Wu ◽

Yu-Tung Yin

Keyword(s):

Nanowire Arrays ◽

Zno Nanowire ◽

Vertical Alignment ◽

Two Stage ◽

Catalyst Free ◽

Zno Nanowire Arrays ◽

Stage Process ◽

Free Growth

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Phase transition induced vertical alignment of ultrathin gallium phosphide nanowire arrays on silicon by chemical beam epitaxy

RSC Advances ◽

10.1039/c2ra21013d ◽

2012 ◽

Vol 2 (23) ◽

pp. 8631 ◽

Cited By ~ 12

Author(s):

Zhang Zhang ◽

Stephan Senz ◽

Fuli Zhao ◽

Lijun Chen ◽

Xingsen Gao ◽

...

Keyword(s):

Phase Transition ◽

Gallium Phosphide ◽

Nanowire Arrays ◽

Chemical Beam Epitaxy ◽

Vertical Alignment

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Irradiation behavior of pyrolytic silicon carbide

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074288 ◽

1983 ◽

Vol 41 ◽

pp. 72-73

Author(s):

R. J. Lauf

Keyword(s):

Silicon Carbide ◽

Fission Products ◽

Thermodynamics And Kinetics ◽

Neutron Fluences ◽

Fuel Particles ◽

Sic Coatings ◽

Irradiation Behavior ◽

Kinetics Of ◽

Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

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Microstructural Evaluation of Silicon Carbide Whisker Reinforced Alumina Fabricated with Carbon-Coated Whiskers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088919 ◽

1991 ◽

Vol 49 ◽

pp. 920-921

Author(s):

K. B. Alexander ◽

P. F. Becher

Keyword(s):

Silicon Carbide ◽

High Resolution Electron Microscopy ◽

Ceramic Composites ◽

Interface Debonding ◽

Resolution Electron ◽

Microstructural Evaluation ◽

Carbon Coated ◽

Electron Energy Loss ◽

Interfacial Films ◽

Debonding Process

The presence of interfacial films at the whisker-matrix interface can significantly influence the fracture toughness of ceramic composites. The film may alter the interface debonding process though changes in either the interfacial fracture energy or the residual stress at the interface. In addition, the films may affect the whisker pullout process through the frictional sliding coefficients or the extent of mechanical interlocking of the interface due to the whisker surface topography.Composites containing ACMC silicon carbide whiskers (SiCw) which had been coated with 5-10 nm of carbon and Tokai whiskers coated with 2 nm of carbon have been examined. High resolution electron microscopy (HREM) images of the interface were obtained with a JEOL 4000EX electron microscope. The whisker geometry used for HREM imaging is described in Reference 2. High spatial resolution (< 2-nm-diameter probe) parallel-collection electron energy loss spectroscopy (PEELS) measurements were obtained with a Philips EM400T/FEG microscope equipped with a Gatan Model 666 spectrometer.

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Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131449 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1362-1363

Author(s):

V. C. Kannan ◽

A. K. Singh ◽

R. B. Irwin ◽

S. Chittipeddi ◽

F. D. Nkansah ◽

...

Keyword(s):

Integrated Circuits ◽

Large Scale ◽

Hexagonal Phase ◽

Microscopy Study ◽

Electron Microscopy Study ◽

Process Conditions ◽

Tin Films ◽

Wide Range ◽

Fcc Phase ◽

Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

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TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138129 ◽

1995 ◽

Vol 53 ◽

pp. 350-351

Author(s):

L. A. Giannuzzi ◽

C. A. Lewinsohn ◽

C. E. Bakis ◽

R. E. Tressler

Keyword(s):

Silicon Carbide ◽

Creep Rate ◽

Vapor Deposition ◽

Chemical Vapor ◽

Primary Creep ◽

Excess Carbon ◽

Silicon Carbide Fibers ◽

Sic Fiber ◽

Carbon Core ◽

Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

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A Metastable Crystalline Phase Coexisted with the Decagonal Quasicrystals in Rapidly Solidified Al-Ir Al-Pd and Al-Pt Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100181622 ◽

1990 ◽

Vol 48 (1) ◽

pp. 572-573

Author(s):

Wang Rong ◽

Ma Lina ◽

K.H. Kuo

Keyword(s):

Metastable Phase ◽

Hexagonal Phase ◽

Icosahedral Quasicrystal ◽

Decagonal Quasicrystal ◽

Decagonal Phase ◽

Decagonal Quasicrystals ◽

Pt Alloy ◽

Pt Alloys ◽

Diffraction Patterns ◽

Rapidly Solidified

Up to now, decagonal quasicrystals have been found in the alloys of whole Al-Pt group metals [1,2]. The present paper is concerned with the TEM study of a hitherto unreported hexagonal phase in rapidly solidified Al-Ir, Al-Pd and Al-Pt alloys.The ribbons of Al5Ir, Al5Pd and Al5Pt were obtained by spun-quenching. Specimens cut from the ribbons were ion thinned and examined in a JEM 100CX electron microscope. In both rapidly solidified Al5Ir and Al5Pd alloys, the decagonal quasicrystal, with rosette or dendritic morphologies can be easily identified by its electron diffraction patterns(EDPs). The EDPs of the decagonal phase for the two alloys are quite similar. However, the existance of decagonal quasicrystal in the Al-Pt alloy has not been verified by our TEM study. It is probably for the reason that the cooling rate is not great enough for the Al5Pt alloy to form the decagonal phase. During the TEM study, a metastable hexagonal phase has been observed in the Al5Ir, Al5Pd and Al5Pt alloys. The lattic parameters calculated from the X-ray powder data of this phase are a=1.229 and c=2.647nm(Al-Pd) and a=1.231 and c=2.623nm(Al-Ir). The composition of this phase was determined by EDS analysis as Al4(Ir, Pd or Pt). It coexists with the decagonal phase in the alloys and transformed to other stable crystalline phases on heating to high temperature. A comparison between the EDPs of the hexagonal and the decagonal phase are shown in Fig.l. Fig. 1(a) is the EDPs of the decagonal phase in various orientions and the EDPs of the hexagonal phase are shown in Fig.1(b), in a similar arrangement as Fig.1(a). It can be clearly seen that the EDPs of the hexagonal phase, especially the distribution of strong spots, are quite similar to their partners of the decagonal quasicrystal in Fig.1(a). All the angles, shown in Fig.l, between two corresponding EDPs are very close to each other. All of these seem strongly to point out that a close structural relationshipexists between these two phases:[110]//d10 [001]//d2(D) //d2 (P)The structure of α-AlFeSi is well known [3] and the 54-atom Mackay icosahedron with double icosahedral shells in the α-AlFeSi structure [4] have been used to model the icosahedral quasicrystal structure. Fig.2(a) and (b) show, respectively, the [110] and [001] projections of the crystal structure of α- AlFeSi, and decagon-pentagons can easily be identified in the former and hexagons in the latter. In addition, the optical transforms of these projections show clearly decagons and hexagons of strong spots, quite similar to those in [110] and [001] EDPs in Fig.1(b). This not only proves the Al(Ir, Pt, Pd) metastable phase being icostructural with the α-AlFeSi phase but also explains the orientation relationship mentioned above.

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