Laser Crystallization of Amorphous Ge Thin Films via a Nanosecond Pulsed Infrared Laser

2021 ◽  
Author(s):  
Ceren Korkut ◽  
Kamil Çınar ◽  
İsmail Kabaçelik ◽  
Raşit Turan ◽  
Mustafa Kulakcı ◽  
...  
Keyword(s):  
Thin Films ◽  
Infrared Laser ◽  
Laser Crystallization

scholarly journals Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

2016 ◽  
Vol 108 (22) ◽  
pp. 221906 ◽  
Author(s):  
T. T. Li ◽  
L. B. Bayu Aji ◽  
T. W. Heo ◽  
M. K. Santala ◽  
S. O. Kucheyev ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Range Order ◽  
Laser Crystallization ◽  
Amorphous Germanium ◽  
Medium Range Order ◽  
Medium Range

Laser Crystallization and Annealing of Ferroelectric Thin Films

1995 ◽  
Vol 397 ◽  
Author(s):  
J.S. Zhu ◽  
X.M. Lu ◽  
X. Liu ◽  
W. Tian ◽  
Z. Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Laser Annealing ◽  
Ferroelectric Phase ◽  
Ferroelectric Thin Films ◽  
Laser Crystallization ◽  
Amorphous Films ◽  
Krf Laser

ABSTRACTFerroelectric PbZr0.44Ti0.56O3 film with pure ferroelectric phase was fabricated by Ar3+ and KrF laser crystallization technique from as-deposited amorphous films, with the substrate at room temperature. Laser annealing technique was also used to improve the quality of BaTiO3 (BT) films.

A Projection-Type Excimer-Laser Crystallization System For Ultra-Large Grain Growth Of Si Thin-Films

1999 ◽  
Vol 558 ◽  
Author(s):  
Chang-Ho Oh ◽  
Mitsuru Nakata ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Films ◽  
Phase Shift ◽  
Excimer Laser ◽  
Laser Crystallization ◽  
Optical Lens ◽  
System A ◽  
Optical Projection ◽  
Crystallization System ◽  
Excimer Laser Crystallization ◽  
Phase Shift Mask

ABSTRACTWe have proposed a new excimer-laser crystallization system based on an optical projection concept. In the proposed system, a collimated excimer-laser light pulse is irradiated to Si thin-films on a glassy substrate, through a phase-shift mask and an optical lens system. Using oneand two-dimensional phase-shift masks, we have examined feasibility of the proposed method.

Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films

1999 ◽  
Vol 85 (11) ◽  
pp. 7914-7918 ◽  
Author(s):  
D. Toet ◽  
P. M. Smith ◽  
T. W. Sigmon ◽  
T. Takehara ◽  
C. C. Tsai ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Structural Characterization ◽  
Hydrogenated Amorphous Silicon ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous

Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

2015 ◽  
Vol 1120-1121 ◽  
pp. 361-368
Author(s):  
Li Jie Deng ◽  
Wei He ◽  
Zheng Ping Li
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Silicon Film ◽  
Threshold Energy ◽  
Nanocrystalline Silicon ◽  
Lateral Growth ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Excimer Laser Crystallization

Nanocrystalline silicon (nc-Si) thin film on glass substrate is subjected to excimer laser crystallized by varying the laser energy density in the range of 50~600 mJ/cm2. The effect of excimer laser crystallization on the structure of silicon film is investigated using Raman spectroscopy, X-ray diffraction, atomic force microscopy and scanning electron microscopy. The results show that polycrystalline silicon thin films can be obtained by excimer laser crystallization of nc-Si films. A laser threshold energy density of 200 mJ/cm2 is estimated from the change of crystalline fraction and surface roughness of the treated films. The growth of grain is observed and the crystallization mechanism is discussed based on the super lateral growth model. The nanocrystalline silicon grains in the films act as seeds for lateral growth to large grains.

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