scholarly journals Quantification of CH4 Hydrate Film Growth Rates in Micromodel Pores

Author(s):  
Stian Almenningen ◽  
Maksim Lysyy ◽  
Geir Ersland
1990 ◽  
Vol 201 ◽  
Author(s):  
Djula Eres

AbstractThis paper discusses the use of supersonic jets of gaseous source molecules in thin film growth. Molecular jets in free form with no skimmers or collimators in the nozzle-substrate path were used in the investigation of basic film growth processes and in practical film growth applications. The Ge growth rates were found to depend linearly on the digermane jet intensity. Furthermore, the film thickness distributions showed excellent agreement with the distribution of digermane molecules in the jet. High epitaxial Ge growth rates were achieved on GaAs (100) substrates by utilizing high-intensity pulsed jets. The practical advantages and limitations of this film growth technique are evaluated, based on the results of microstructural and electrical measurements of heteroepitaxial Ge films on GaAs (100) substrates.


2020 ◽  
Vol 94 (9) ◽  
pp. 1949-1951
Author(s):  
V. A. Vlasov ◽  
A. N. Nesterov ◽  
A. M. Reshetnikov

2009 ◽  
Vol 52 (5) ◽  
pp. 676-682 ◽  
Author(s):  
BaoZi Peng ◽  
ChangYu Sun ◽  
GuangJin Chen ◽  
LanYing Yang ◽  
Wei Zhou ◽  
...  

1995 ◽  
Vol 387 ◽  
Author(s):  
Hung Liao ◽  
Hannes Stippel ◽  
Krishna Reddy ◽  
Sam Geha ◽  
Kevin Brown ◽  
...  

AbstractExperimental and simulation studies were conducted in an attempt to understand the effects of collimator life time on the Ti and TiN film growth rates and conformalities in sputter deposition processes. The Ti and TiN films were deposited with and without collimation. The hexagonal cells of the collimator used in this study have a 1:1 aspect ratio. A Monte Carlo based simulator was used to calculate the angular distributions of species exiting from a collimator cell and the percentage decrease in the rate of film growth as a function of the collimator life time. Then, a low pressure deposition process simulator, EVOLVE, was used to predict the conformalities of deposited films in contacts or vias, assuming that the films were uniformly deposited on the side-walls of collimator cells. We conclude that the loss in growth rate is largely due to the shrinkage in the cross sectional area of the collimator cell inlets. We arrive at this conclusion after comparing an estimated film thickness on the collimator side-walls with experimental measurements. With extended collimator usage, the predicted and experimental film profiles in contacts or vias show increasing bottom coverage and decreasing side-wall coverages.


2014 ◽  
Vol 44 (6) ◽  
pp. 864
Author(s):  
ShengLi LI ◽  
ChangYu SUN ◽  
GuangJin CHEN

2001 ◽  
Vol 185 (1-2) ◽  
pp. 65-75 ◽  
Author(s):  
Erik M. Freer ◽  
M. Sami Selim ◽  
E. Dendy Sloan

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