Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

Author(s):  
Yoshihiro Kangawa ◽  
Akira Kusaba ◽  
Paweł Kempisty ◽  
Kenji Shiraishi ◽  
Shugo Nitta ◽  
...  
2006 ◽  
Author(s):  
Douglas C. Hall ◽  
Patrick J. Fay ◽  
Thomas H. Kosel ◽  
Bruce A. Bunker ◽  
Russell D. Dupuis

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 567
Author(s):  
Alexander Yaresko ◽  
Artem V. Pronin

The ab-plane optical conductivity of the Weyl semimetal TaP is calculated from the band structure and compared to the experimental data. The overall agreement between theory and experiment is found to be best when the Fermi level is slightly (20 to 60 meV) shifted upwards in the calculations. This confirms a small unintentional doping of TaP, reported earlier, and allows a natural explanation of the strong low-energy (50 meV) peak seen in the experimental ab-plane optical conductivity: this peak originates from transitions between the almost parallel non-degenerate electronic bands split by spin-orbit coupling. The temperature evolution of the peak can be reasonably well reproduce by calculations using an analog of the Mott formula.


2021 ◽  
pp. 2101729
Author(s):  
Dan Wu ◽  
Wenhui Li ◽  
Haochen Liu ◽  
Xiangtian Xiao ◽  
Kanming Shi ◽  
...  

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