Reverse Current Pulse Method To Restore Uniform Concentration Profiles in Ion-Selective Membranes. 2. Comparison of the Efficiency of the Different Protocols

2009 ◽  
Vol 81 (13) ◽  
pp. 5155-5164 ◽  
Author(s):  
Justin M. Zook ◽  
Ernő Lindner
2006 ◽  
Vol 157 (2) ◽  
pp. 695-702 ◽  
Author(s):  
K. Sugiura ◽  
M. Yamamoto ◽  
Y. Yoshitani ◽  
K. Tanimoto ◽  
A. Daigo ◽  
...  

2008 ◽  
Vol 622 (2) ◽  
pp. 225-232 ◽  
Author(s):  
Graeme A. Snook ◽  
Andrew J. Urban ◽  
Marshall R. Lanyon ◽  
Katherine McGregor

2016 ◽  
Vol 858 ◽  
pp. 761-764
Author(s):  
Pavel A. Ivanov ◽  
Oleg Kon'kov ◽  
Tatyana Samsonova ◽  
Alexander Potapov ◽  
Igor Grekhov

Mesa-epitaxial 4H-SiC p+-p-no-n+-diodes were fabricated from commercial epitaxial wafers. Reverse recovery characteristics of the diodes were measured in pulse regimes to be relevant to operation of drift step recovery diodes (DSRDs) [1]. When injecting the minority carriers by forward current pulse followed by applying a reverse voltage pulse, the diodes are able to break the reverse current in a subnanosecond time (DSRD-mode). Different regimes of diode operation in DSRD-mode are investigated such as variable reverse voltage amplitude, forward current amplitude and duration, time delay between forward and reverse pulses.


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