In Situ FT-IR Measurements of Competitive Vapor Adsorption into Porous Thin Films Containing Silica Nanoparticles

2002 ◽  
Vol 74 (5) ◽  
pp. 1157-1164 ◽  
Author(s):  
Charles R. Evans ◽  
Tighe A. Spurlin ◽  
Brian L. Frey
Keyword(s):  
Thin Films ◽  
Silica Nanoparticles ◽  
Vapor Adsorption ◽  
Porous Thin Films ◽  
Ft Ir

Hybrid perovskite solar cells: In situ investigation of solution-processed PbI2 reveals metastable precursors and a pathway to producing porous thin films

2017 ◽  
Vol 32 (10) ◽  
pp. 1899-1907 ◽  
Author(s):  
Dounya Barrit ◽  
Arif D. Sheikh ◽  
Rahim Munir ◽  
Jérémy M. Barbé ◽  
Ruipeng Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Solution Processed ◽  
Porous Thin Films ◽  
Hybrid Perovskite ◽  
In Situ Investigation ◽  
Image Position

Abstract

FT-IR, SIMS and electrical characterization of Si3N4 thin films obtained from CVD, assisted by in situ electrical discharge

1993 ◽  
Vol 24 (4) ◽  
pp. 389-393
Author(s):  
B. Balland ◽  
R. Botton ◽  
M. Lemiti ◽  
J.C. Bureau ◽  
A. Glachant
Keyword(s):  
Thin Films ◽  
Electrical Discharge ◽  
Electrical Characterization ◽  
Ft Ir

FT-IR, Sims and Electrical Characterization of Si3N4 Thin Films Obtained from C.V.D. Assisted by In-Situ Electrical Discharge

1992 ◽  
Vol 284 ◽  
Author(s):  
B. Balland ◽  
J. C. Bureau ◽  
C. Plossu ◽  
R. Botton
Keyword(s):  
Thin Films ◽  
Electrical Discharge ◽  
Low Frequency ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Flat Band ◽  
Band Shift ◽  
Ft Ir

ABSTRACTAn original process has been developed enabling the fabrication of CVD insulating (Si3N4) thin films, by means of an in-situ activation of the reactions at T < 400°C and under P=1 to 2 torr. Mono-Si substrates were nitrided using a mixture of argon containing SiH4 and NH3·O2 has also been added to the reaction gases. The activation was performed by a DC electrical discharge. The substrate was not used as an electrode and was placed parallel to the discharge current. This configuration minimized the contamination of the films during their formation. The obtained layers have been analyzed using FT-IR and SIMS.M.I.S. structures have been realized, and the flat-band shift ΔVFB and the interface state density Nit have been extracted from the high and low frequency C-V characteristics. The values of the flat-band shift depend on the discharge domain and decrease with temperature. Good electrical characteristics are obtained for thin films formed at low temperature.

The Influence of Surface Modified Silica Nanoparticles: Properties of Epoxy Nanocomposites

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Sahid Mehmood ◽  
Nisar Ali ◽  
Farman Ali ◽  
Fazal Haq ◽  
Muhammad Haroon ◽  
...  
Keyword(s):  
Thin Films ◽  
Silica Nanoparticles ◽  
Coupling Agent ◽  
Composite System ◽  
Network Formation ◽  
Silica Particles ◽  
Epoxy Nanocomposites ◽  
Ft Ir ◽  
Surface Modified ◽  
Tga Analysis

AbstractThe influence of the surface-modified (CCS) and un-modified (UCS) silica nanoparticles on epoxy nanocomposites were studied. Two different nanocomposites systems were synthesized using tetraethylorthosilicate (TEOS) and 3-(triethoxysilyl) propylamine APTES as a precursor and coupling agent, respectively. In the uncoupled composite system (UCS) the silica particles were solely generated using TEOS as a precursor. The APTES was used as a coupling agent to chemically link the silica (SiO2) particles to the matrix in the coupled composite system (CCS). Both composite systems were fabricated as thin films. The SiO2 epoxy nanocomposites thin films were characterized by Differential Scanning Calorimetry (DSC), RAMAN, Fourier Transform Infra-Red (FT-IR), Scanning Electron Microscopy (SEM) and Thermal Gravimetric (TGA) analysis. RAMAN and FT-IR analysis confirmed the curing of epoxy resin and the generation of the inorganic structural network formation. SEM analysis of these nanocomposites revealed that silica particles were uniformly dispersed in the epoxy matrix. DSC analysis of the nano-composites revealed an increase in glass transition (Tg) temperature with the addition of nanofiller. TGA analysis shows enhanced thermal stability of the coupled composite system in comparison to the neat and uncoupled epoxy composite system.

In Situ FT-IR Studies of Oxide and Oxynitride Sol-Gel-Derived Thin Films

1984 ◽  
Vol 32 ◽  
Author(s):  
David M. Haaland ◽  
C. Jeffrey Brinker
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Temperature ◽  
Low Temperatures ◽  
Sol Gel ◽  
Ir Studies ◽  
Oxynitride Glass ◽  
Vibrational Bands ◽  
Ft Ir

ABSTRACTA high-temperature infrared cell was developed to study the gel-to-glass conversion of sol-gel-derived thin films. FT-IR spectra of matched thin-film borosilicate sol-gel samples were taken as the samples were heated at 100°C intervals to 700°C in either air or ammonia. The gels were converted to oxide and oxynitride glasses, respectively, by these heat treatments. The gel-to-glass conversion could be followed and compared for these two treatments by monitoring changes in the vibrational bands present in the spectra. Comparisons between the infrared spectra of NH3-treated and air-treated films heated above 500°C reveal the appearance of new B-N bonds at the expense of B-O-Si bonds for the NH3-fired films. These spectra also exhibit changes which may indicate the formation of Si-N bonds. Thus, ammonolysis reactions can result in thin-film oxynitride glass formation at relatively low temperatures.

Sign in / Sign up

Export Citation Format

Share Document