Linearity considerations for a near-infrared laser diode intracavity absorption spectrophotometer

1990 ◽  
Vol 62 (14) ◽  
pp. 1543-1545 ◽  
Author(s):  
James. Hicks ◽  
Gabor. Patonay
Keyword(s):  
Laser Diode ◽  
Near Infrared ◽  
Infrared Laser

Bidirectional Current Triggering in VO2-Based Device with High-Repetition-Rate Pulse Beams Using Near-Infrared Laser Diode

2020 ◽  
Vol 20 (1) ◽  
pp. 351-358
Author(s):  
Jihoon Kim ◽  
Sungwook Choi ◽  
Seul-Lee Lee ◽  
Min Seok Kim ◽  
Do Kyung Kim ◽  
...  
Keyword(s):  
Laser Diode ◽  
Repetition Rate ◽  
Near Infrared ◽  
Infrared Laser ◽  
High Repetition Rate ◽  
High Repetition

Near-infrared laser diode intracavity absorption spectrometry

1989 ◽  
Vol 61 (13) ◽  
pp. 1425-1427 ◽  
Author(s):  
Ed. Unger ◽  
Gabor. Patonay
Keyword(s):  
Laser Diode ◽  
Near Infrared ◽  
Absorption Spectrometry ◽  
Infrared Laser

In Situ Generation of Surface Plasmon Polaritons Using a Near-Infrared Laser Diode

Nano Letters ◽  
2012 ◽  
Vol 12 (9) ◽  
pp. 4693-4697 ◽  
Author(s):  
D. Costantini ◽  
L. Greusard ◽  
A. Bousseksou ◽  
R. Rungsawang ◽  
T. P. Zhang ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Laser Diode ◽  
Surface Plasmon Polaritons ◽  
Near Infrared ◽  
Infrared Laser ◽  
In Situ Generation ◽  
Plasmon Polaritons

High Efficiency Crystallization of Silicon Thin Films Using Continuous Wave Infrared Laser

2006 ◽  
Vol 910 ◽  
Author(s):  
Naoki Sano ◽  
Masato Maki ◽  
Nobuyuki Andoh ◽  
Toshiyuki Sameshima
Keyword(s):  
Thin Films ◽  
Laser Diode ◽  
Near Infrared ◽  
High Efficiency ◽  
Continuous Wave ◽  
Infrared Laser ◽  
Silicon Films ◽  
Optical Absorption Coefficient ◽  
Wave Number ◽  
Silicon Thin Films

AbstractLaser crystallization of silicon thin films on inexpensive glass substrates with a photo-absorption layer of diamond like-carbon (DLC) film was investigated. Scanned near-infrared beam emitted from a continuous wave (CW) laser diode at speed of 30 cm/s with power density of 30 kW/cm2 and wavelength of 940nm was effectively absorbed by DLC films, and changed to thermal energy for heating underlying silicon films with thickness of 50 nm. As a result, crystallization of silicon films was achieved. Raman scattering spectra was measure for the structural analysis of silicon films, and the sharp TO phonon peak at wave number of 520 cm-1 was observed. It shows that silicon films were effectively crystallized using the near-infrared laser diode. On the other hand, no crystallization was observed when the laser diode was directly irradiated to 50-nm-Si/quartz, because silicon has no optical absorption coefficient at 940 nm.

A Near-Infrared Laser Diode Excitation Source for An Slm 8000C Fluorometer

1990 ◽  
Vol 19 (1) ◽  
pp. 29-47 ◽  
Author(s):  
James Hicks ◽  
Daniel Andrews-Wilberforce ◽  
Gabor Patonay
Keyword(s):  
Laser Diode ◽  
Near Infrared ◽  
Infrared Laser ◽  
Excitation Source
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