Investigation of aluminum gallium arsenide/gallium arsenide superlattices by atomic force microscopy

1992 ◽  
Vol 64 (17) ◽  
pp. 1760-1762 ◽  
Author(s):  
Gernot. Friedbacher ◽  
Paul K. Hansma ◽  
Daniel. Schwarzbach ◽  
Manfred. Grasserbauer ◽  
Heinrich. Nickel
Keyword(s):  
Atomic Force Microscopy ◽  
Gallium Arsenide ◽  
Aluminum Gallium Arsenide ◽  
Force Microscopy ◽  
Atomic Force

In Situ Investigation of Aluminum Gallium Arsenide/Gallium Arsenide Multilayer Structures under Inert and Reactive Media by Atomic Force Microscopy

1995 ◽  
Vol 67 (9) ◽  
pp. 1530-1535 ◽  
Author(s):  
Thomas. Prohaska ◽  
Gernot. Friedbacher ◽  
Manfred. Grasserbauer ◽  
Heinrich. Nickel ◽  
Rainer. Loesch ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Gallium Arsenide ◽  
Aluminum Gallium Arsenide ◽  
Multilayer Structures ◽  
Force Microscopy ◽  
Atomic Force ◽  
In Situ Investigation ◽  
Reactive Media

Study of the properties of the surface of gallium arsenide by scanning atomic force microscopy

2008 ◽  
Vol 42 (5) ◽  
pp. 531-539 ◽  
Author(s):  
V. G. Bozhkov ◽  
N. A. Torkhov ◽  
I. V. Ivonin ◽  
V. A. Novikov
Keyword(s):  
Atomic Force Microscopy ◽  
Gallium Arsenide ◽  
Force Microscopy ◽  
Atomic Force

Current-Voltage Characterization of Gallium Arsenide Nanowires Using a Conductive Atomic Force Microscopy

2015 ◽  
Vol 1109 ◽  
pp. 238-242 ◽  
Author(s):  
R. Muhammad ◽  
Yussof Wahab ◽  
Zulkafli Othaman ◽  
Samsudi Sakrani
Keyword(s):  
Atomic Force Microscopy ◽  
Gallium Arsenide ◽  
Linear Part ◽  
Schottky Contact ◽  
Conductivity Measurement ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage

Utilizing semiconductor nanowires for optoelectronics device requires exact knowledge of their current-voltage properties. In this report, we examine accurate on-top imaging and I-V characterization of individual vertical Gallium Arsenide Nanowires (GaAs NWs) using conductive atomic force microscopy without additional microscopy tools, thus allowing versatile application. The measured current-voltage characteristic of a single NW shows the typical performance of a Schottky contact, which caused by the contact between the metallic AFM tip and the top of NWs. The height of the Schottky barrier is dependent on the diameter of the nanowires. The linear part of the curve was used to calculate the differential resistance, which was found to be about 25 to 100 MΩ. Energy band gap for GaAs NW was found to be 1.5 eV by differential conductivity measurement.

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