TEM analysis of TiSi2 on Si and polysilicon

1988 ◽  
Vol 46 ◽  
pp. 886-887
Author(s):  
Nathan Lewis ◽  
Krishna Shenai ◽  
Ernest L. Hall
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Rf Sputtering ◽  
Temperature Stability ◽  
Device Fabrication ◽  
High Temperature Stability ◽  
Rapid Thermal Anneal ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Si Substrates

TiSi2, when deposited on poly-Si and Si, exhibits very low sheet resistance ana can be easily integrated into existing device and IC fabrication environments. However, the high temperature process stability of TiSi2 is rather limited. The silicide must be able to withstand processing temperatures in the 800°C-1000°C range for the fabrication of many high voltage devices and integrated circuits. In the present investigation the high temperature stability of the TiSi2 structures were examined using TEH on both planar and cross-sectional specimens.The starting materials in this study were <100> Si substrates doped with 1x1016 cm-3 boron. The gate SiO2 was grown and then the poly-Si deposited on the substrate followed by TiSi2 formation on the poly-Si, creating an actual MOS structure used for device fabrication. The TiSi2 was formed by rf sputtering of Ti followed by either a two-step thermal or rapid thermal anneal (RTA) to form the silicide.

scholarly journals High Temperature Behavior of RuAl Thin Films on Piezoelectric CTGS and LGS Substrates

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1605 ◽  
Author(s):  
Marietta Seifert
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Cross Sections ◽  
Barrier Layer ◽  
High Vacuum ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Si Substrates ◽  
20 Nm

This paper reports on a significant further improvement of the high temperature stability of RuAl thin films (110 nm) on the piezoelectric Ca 3 TaGa 3 Si 2 O 14 (CTGS) and La 3 Ga 5 SiO 14 (LGS) substrates. RuAl thin films with AlN or SiO 2 cover layers and barriers to the substrate (each 20 nm), as well as a combination of both were prepared on thermally oxidized Si substrates, which serve as a reference for fundamental studies, and the piezoelectric CTGS, as well as LGS substrates. In some films, additional Al layers were added. To study their high temperature stability, the samples were annealed in air and in high vacuum up to 900 °C, and subsequently their cross-sections, phase formation, film chemistry, and electrical resistivity were analyzed. It was shown that on thermally oxidized Si substrates, all films were stable after annealing in air up to 800 °C and in high vacuum up to 900 °C. The high temperature stability of RuAl thin films on CTGS substrates was improved up to 900 °C in high vacuum by the application of a combined AlN/SiO 2 barrier layer and up to 800 °C in air using a SiO 2 barrier. On LGS, the films were only stable up to 600 °C in air; however, a single SiO 2 barrier layer was sufficient to prevent oxidation during annealing at 900 °C in high vacuum.

UNS N06455

Alloy Digest ◽  
1989 ◽  
Vol 38 (1) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Stress Corrosion Cracking ◽  
Temperature Stability ◽  
Heat Treating ◽  
High Ductility ◽  
High Temperature Stability ◽  
Nickel Chromium ◽  
Long Time ◽  
Resistance To Stress

Abstract UNS NO6455 is a nickel-chromium-molybdenum alloy with outstanding high-temperature stability as shown by high ductility and corrosion resistance even after long-time aging in the range 1200-1900 F. The alloy also has excellent resistance to stress-corrosion cracking and to oxidizing atmospheres up to 1900 F. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Ni-367. Producer or source: Nickel and nickel alloy producers.

UNS R54620

Alloy Digest ◽  
1987 ◽  
Vol 36 (7) ◽  
Keyword(s):  
Titanium Alloy ◽  
High Temperature ◽  
Time Use ◽  
Temperature Stability ◽  
High Strength ◽  
Heat Treating ◽  
High Temperature Stability ◽  
Beta Titanium Alloy ◽  
Beta Titanium ◽  
Long Time

Abstract UNS No. R54620 is an alpha-beta titanium alloy. It has an excellent combination of tensile strength, creep strength, toughness and high-temperature stability that makes it suitable for service to 1050 F. It is recommended for use where high strength is required. It has outstanding advantages for long-time use at temperatures to 800 F. This datasheet provides information on composition, physical properties, elasticity, tensile properties, and bend strength as well as creep. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Ti-86. Producer or source: Titanium alloy mills.

La2O3 Doped Y2O3 Stabilized ZrO2 TBC Prepared by EB-PVD

2006 ◽  
Vol 317-318 ◽  
pp. 501-504 ◽  
Author(s):  
Mineaki Matsumoto ◽  
Norio Yamaguchi ◽  
Hideaki Matsubara
Keyword(s):  
Thermal Conductivity ◽  
High Temperature ◽  
High Resistance ◽  
Thermal Transport ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Microstructural Observation ◽  
Low Thermal Conductivity ◽  
Ysz Coating

Effect of La2O3 addition on thermal conductivity and high temperature stability of YSZ coating produced by EB-PVD was investigated. La2O3 was selected as an additive because it had a significant effect on suppressing densification of YSZ. The developed coating showed extremely low thermal conductivity as well as high resistance to sintering. Microstructural observation revealed that the coating had fine feather-like subcolumns and nanopores, which contributed to limit thermal transport. These nanostructures were thought to be formed by suppressing densification during deposition.

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