Ion beam stimulated reactions in metallic alloys

1988 ◽  
Vol 46 ◽  
pp. 490-491
Author(s):  
L. K. Mansur ◽  
E. H. Lee
Keyword(s):  
Vacancy Concentration ◽  
Ion Beam ◽  
Relaxation Times ◽  
Solute Segregation ◽  
Metallic Alloys ◽  
Defect Production ◽  
Ion Beam Mixing ◽  
Near Surface ◽  
Atomic Displacements ◽  
Compositional Changes

Ion implantation, ion beam mixing, and ion beam stimulated reactions can be discussed as somewhat distinct but related processes. The first two emphasize compositional changes in near-surface regions. The last relies mainly on microstructural and precipitation reactions caused by atomic displacements. In this last area much of the work has been carried out in metallic alloys. Here we summarize experiments in our laboratory that cover several ion-beam-induced reactions in Fe-15Ni-15Cr base alloys, to provide a perspective on related work in materials other than silicon. The techniques and mechanistic interpretations of results are applicable to a variety of materials.This is a powerful way to examine the interplay of characteristic relaxation times. Intervals of high point defect production and resultant processes, such as solute segregation and drift-directed clustering, are alternated with thermal annealing. Remarkable changes with respect to either steady bombardment or thermal aging at the same temperature can be produced. Figure 1(a) shows theoretically calculated fluctuating vacancy concentration in a steady irradiation.

scholarly journals Microstructure Evolution in ZrCx with Different Stoichiometries Irradiated by Four MeV Au Ions

Materials ◽  
2019 ◽  
Vol 12 (22) ◽  
pp. 3768
Author(s):  
Boxin Wei ◽  
Dong Wang ◽  
Yujin Wang ◽  
Haibin Zhang
Keyword(s):  
Radiation Damage ◽  
Microstructure Evolution ◽  
Vacancy Concentration ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Dislocation Loops ◽  
Black Dot ◽  
X Ray Diffraction ◽  
Near Surface ◽  
Transmission Electron

ZrCx ceramics with different stoichiometries were irradiated under a four MeV Au ion beam in doses of 2 × 1016 ions/cm2 at room temperature, corresponding to ~130 dpa. Grazing incidence, X-ray diffraction and transmission electron microscopy were performed to study the radiation damage and microstructure evolution in ZrCx ceramics. With the decrease in C/Zr ratio, the expansion of ZrCx lattice became smaller after irradiation. Some long dislocation lines formed at the near-surface, while, in the area with the greatest damage (depth of ~400 nm), large amounts of dislocation loops formed in ZrC, ZrC0.9 and ZrC0.8. With the increase in carbon vacancy concentration, the size of the dislocation loops gradually decreased. Few dislocation loops were found in ZrC0.7 after irradiation, and only black-dot defects were found in the area with the greatest damage. For the non-stoichiometric ZrCx, with the increase of the intrinsic vacancies, the number of C interstitials caused by irradiation decreased, and the recombination barrier of C Frenkel pairs reduced. The above factors will reduce the total number of C interstitials after cascade cooling, suppressing the formation and growth of dislocation loops, which is significant for the enhancement of the tolerance of radiation damage.

Ion Beam Deposition: Damage and Epitaxy

1987 ◽  
Vol 107 ◽  
Author(s):  
D G Armour
Keyword(s):  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Solid Surfaces ◽  
Initial Growth ◽  
Near Surface ◽  
Growth Technique ◽  
Atomic Displacements ◽  
Current Densities ◽  
Low Energy Ions

AbstractThe bombardment of solid surfaces with ions in the energy range below about 150 eV, depending on the ion-substrate combination, results in a net growth of material on the surface. An ion beam facility capable of producing highly uniform, low energy beams of current densities in the range 10-1 to 1 Am-1 has been developed to study the potential of this growth technique for the fabrication of thin epitaxial films at low temperatures.The energy deposition associated with ion bombardment, which is considered to be responsible for the low temperature epitaxy capability, can also cause atomic displacements on the surface and near-surface regions of the substrate during initial growth and in the growing film. A study of the growth processes thus requires investigation of the damaging effects of low energy ion bombardment. In the present paper, fundamental aspects of the implantation and deposition of materials using very low energy ions will be discussed.

Characterization of ion-beam mixed multilayers via grazing x-ray reflectometry

1988 ◽  
Vol 3 (6) ◽  
pp. 1089-1096 ◽  
Author(s):  
M. G. Le Boité ◽  
A. Traverse ◽  
L. Névot ◽  
B. Pardo ◽  
J. Corno
Keyword(s):  
Ion Beam ◽  
High Sensitivity ◽  
Metallic Multilayers ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Ion Beam Mixing ◽  
Compound A ◽  
X Ray ◽  
Atomic Displacements

The grazing x-ray reflectrometry technique was used as a way to study modifications in metallic multilayers induced by ion-beam irradiation. Due to the high sensitivity of the technique, short-range atomic displacements of an atom A in a layer B can be detected so that the first stages of ion-beam mixing can be investigated. The rate of mixing is measured and the compound A1−xBx formed at the layers' interfaces is characterized.

Ion beam processing of LiNbO3

1986 ◽  
Vol 1 (1) ◽  
pp. 104-113 ◽  
Author(s):  
B. R. Appleton ◽  
G. M. Beardsley ◽  
G. C. Farlow ◽  
W. H. Christie ◽  
P. R. Ashley
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Heavy Ion ◽  
Ion Scattering ◽  
Ion Beam Mixing ◽  
Near Surface ◽  
Alternative Techniques ◽  
Surface Decomposition ◽  
Secondary Ion

Ion implantation and ion beam mixing have been investigated as alternative techniques to hightemperature diffusion for introducing dopants into LiNbO3. Heavy ion bombardment at both 77 and 300 K initiated a near-surface decomposition causing Li to diffuse to the surface where it formed a nonuniform agglomerate. The damage and annealing characteristics of this effect were studied by ion scattering/channeling, secondary ion mass spectrometry, and optical microscopy. The origins of the surface decomposition are discussed along with possible solutions, and selected samples were evaluated for waveguide properties.

Ion Beam Mixing In Binary Amorphous Metallic Alloys

1985 ◽  
Vol 51 ◽  
Author(s):  
Horst Hahn ◽  
R. S. Averback ◽  
T. Diaz De La Rubia ◽  
P. R. Okamoto
Keyword(s):  
Low Temperatures ◽  
Glass Phase ◽  
Ion Beam ◽  
Metallic Alloys ◽  
Strong Temperature Dependence ◽  
Ion Beam Mixing ◽  
Amorphous Metallic Alloys ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Diffusion Mechanisms

ABSTRACTIon beam mixing (IM) was measured in homogeneous amorphous metallic alloys of Cu-Er and Ni-Ti as a function of temperature using tracer impurities, i.e., the so called “marker geometry”. In Cu-Er, a strong temperature dependence in IM was observed between 80 K and 373 K, indicating that radiation-enhanced diffusion mechanisms are operative in this metallic glass. Phase separation of the Cu-Er alloy was also observed under irradiation as Er segregated to the vacuum and SiO2 interfaces of the specimen. At low-temperatures, the amount of mixing in amorphous Ni-Ti is similar to that in pure Ni or Ti, but it is much greater in Cu-Er than in either Cu or Er.

Ion Beam Mixing: Amorphous, Crystalline, and Quasicrystalline Phases

MRS Bulletin ◽  
1987 ◽  
Vol 12 (2) ◽  
pp. 31-39 ◽  
Author(s):  
D.A. Lilienfeld ◽  
L.S. Hung ◽  
J.W. Mayer
Keyword(s):  
Ion Implantation ◽  
Integrated Circuit ◽  
Ion Beam ◽  
Surface Region ◽  
Electrical Contacts ◽  
Metal Alloys ◽  
Ion Beam Mixing ◽  
Near Surface ◽  
Systems Research ◽  
Alloy Systems

In the last quarter of a century, modification of the near-surface region of materials has become of major technological importance. The principal surface modification technique utilized in integrated circuit technology is ion implantation, a technique which has more recently been applied in the metal-processing industry as well. The very high doses required for applications such as increasing the hardness of steel or forming buried oxide layers in silicon have pushed ion implantation to its limits. Ion beam mixing, the intermixing of surface layers by the penetration of energetic ions through them, was developed to overcome these limits. Additionally, ion beam mixing has been able to produce new phases, amorphous and crystalline, which have technologically and scientifically interesting properties.Ion beam mixing was studied extensively in silicide forming systems, due partly to applications to electrical contacts for silicon devices. In intermetallic alloy systems, research has concentrated on determining the interplay between the formation of amorphous and crystalline structures and that between equilibrium and metastable phases. Although over 50 alloy systems have been studied, this article will concentrate on the Al-based alloys. These alloys, particularly the near-noble-metal alloys, demonstrate nearly all the features associated with ion-induced phase formation. Further, Al-rich refractory metal alloys form quasicrystalline icosahe-dral alloys. Ion-beam mixing results parallel those of splat-quenching, the technique first used to produce the fivefold symmetric structure.

A Comparison of Atomic Mixing Behaviour of Cu- Au and Cu- W Systems for Room Temperature and Low Temperature Irradiation

1981 ◽  
Vol 7 ◽  
Author(s):  
Z.L. Wang ◽  
J.F.M. Westendorp ◽  
S. Doorn ◽  
F.W. Saris
Keyword(s):  
Ion Beam ◽  
Pronounced Difference ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Atomic Displacements ◽  
Radiation Enhanced Diffusion ◽  
Thermodynamic Conditions ◽  
Order Of Magnitude ◽  
Atomic Mixing ◽  
Mixing Behaviour

ABSTRACT300 keV Kr ion irradiations with doses varying from 2× 1015 to 2× 1016 at/cm2 have been applied to initiate mixing of Cu-Au and Cu-W systems. As under normal thermodynamic conditions the Cu-Au system is miscible whereas the Cu-W system is not, the comparison of both systems provides a test for the current theories on ion-beam mixing. A pronounced difference in mixing phenomena is observed for both systems; in the Cu-Au system atomic displacements are one order of magnitude larger than those in the Cu-W system. In addition, a drastic temperature dependence of ion-beam mixing in the Cu-Au system has been found. The mixing is suppressed by lowering the substrate temperature during irradiation. These results show that radiation enhanced diffusion is the mechanism underlying the ion-beam mixing of Cu and Au. Results for the Cu-W system are consistent with a collisional mixing model.

Ion Beam Deposition: Damage and Epitaxy

1988 ◽  
Vol 100 ◽  
Author(s):  
D G Armour
Keyword(s):  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Solid Surfaces ◽  
Initial Growth ◽  
Near Surface ◽  
Growth Technique ◽  
Atomic Displacements ◽  
Current Densities ◽  
Low Energy Ions

ABSTRACTThe bombardment of solid surfaces with ions in the energy range below about 150 eV, depending on the ion-substrate combination, results in a net growth of material on the surface. An ion beam facility capable of producing highly uniform, low energy beams of current densities in the range 10−2 to 1 Am−2 has been developed to study the potential of this growth technique for the fabrication of thin epitaxial films at low temperatures.The energy deposition associated with ion bombardment, which is considered to be responsible for the low temperature epitaxy capability, can also cause atomic displacements on the surface and near-surface regions of the substrate during initial growth and in the growing film. A study of the growth processes thus requires investigation of the damaging effects of low energy ion bombardment. In the present paper, fundamental aspects of the implantation and deposition of materials using very low energy ions will be discussed.

Beam Induced Reactions in Metal-Film Systems

1980 ◽  
Vol 1 ◽  
Author(s):  
S. S. Lau ◽  
Martti Mäenpää ◽  
James W. Mayer
Keyword(s):  
Metal Film ◽  
Solid Phase ◽  
Ion Beam ◽  
Metastable Phases ◽  
Ion Beam Mixing ◽  
Amorphous Phases ◽  
Metal Metal ◽  
Compositional Changes ◽  
Semiconductor Thin Film ◽  
Fast Quenching

ABSTRACTPulsed beams (laser, electron, or ion) and ion beams (ion beam mixing) have been used to induce structural and compositional changes in metal-metal and metal-semiconductor thin-film structures. Metastable crystalline and amorphous phases have been formed. Although ultra fast quenching occurs with both techniques, metastable phases are formed by quenching from the liquid with pulsed beams and from the solid-phase with ion-induced reactions. With both techniques metastable phases can be formed over a broader compositional range than with conventional melt-quench methods.

Sign in / Sign up

Export Citation Format

Share Document