scholarly journals Microstructure Evolution in ZrCx with Different Stoichiometries Irradiated by Four MeV Au Ions

Materials ◽  
2019 ◽  
Vol 12 (22) ◽  
pp. 3768
Author(s):  
Boxin Wei ◽  
Dong Wang ◽  
Yujin Wang ◽  
Haibin Zhang
Keyword(s):  
Radiation Damage ◽  
Microstructure Evolution ◽  
Vacancy Concentration ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Dislocation Loops ◽  
Black Dot ◽  
X Ray Diffraction ◽  
Near Surface ◽  
Transmission Electron

ZrCx ceramics with different stoichiometries were irradiated under a four MeV Au ion beam in doses of 2 × 1016 ions/cm2 at room temperature, corresponding to ~130 dpa. Grazing incidence, X-ray diffraction and transmission electron microscopy were performed to study the radiation damage and microstructure evolution in ZrCx ceramics. With the decrease in C/Zr ratio, the expansion of ZrCx lattice became smaller after irradiation. Some long dislocation lines formed at the near-surface, while, in the area with the greatest damage (depth of ~400 nm), large amounts of dislocation loops formed in ZrC, ZrC0.9 and ZrC0.8. With the increase in carbon vacancy concentration, the size of the dislocation loops gradually decreased. Few dislocation loops were found in ZrC0.7 after irradiation, and only black-dot defects were found in the area with the greatest damage. For the non-stoichiometric ZrCx, with the increase of the intrinsic vacancies, the number of C interstitials caused by irradiation decreased, and the recombination barrier of C Frenkel pairs reduced. The above factors will reduce the total number of C interstitials after cascade cooling, suppressing the formation and growth of dislocation loops, which is significant for the enhancement of the tolerance of radiation damage.

scholarly journals Effects of the Surface on Displacement Cascades Produced by Heavy-Ion Irradiation of Ni3Al and Cu3Au

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Müller ◽  
M. L. Jenkins ◽  
C. Abromeit ◽  
H. Wollenberger
Keyword(s):  
Ion Irradiation ◽  
Incident Angle ◽  
Ion Beam ◽  
Heavy Ion ◽  
Small Population ◽  
Dislocation Loops ◽  
Near Surface ◽  
Ion Energy ◽  
Heavy Ion Irradiation ◽  
Transmission Electron

AbstractStereo transmission electron microscopy has been used to characterise the distribution in depth of disordered zones and associated dislocation loops in the ordered alloys Ni3Al and Cu3Au after heavy ion irradiation, most extensively for Ni3Al irradiated with 50 keV Ta+ ions at a temperature of 573 K. The Cu3Au specimen was irradiated with 50 keV Ni+ ions at an incident angle of 45° at a temperature of 373 K. In Ni3Al the defect yield, i.e. the probability for a disordered zone to contain a loop was found to be strongly dependent on the depth of the zone in the foil, varying from about 0.7 for near-surface zones to about 0.2 in the bulk. The sizes and shapes of disordered zones were only weakly dependent on depth, except for a small population of zones very near the surface which were strongly elongated parallel to the incident ion beam. In Cu3Au the surface had a smaller but still significant effect on the defect yield. The dependence of the tranverse disordered zone diameter d on ion energy E for Ta+ irradiation of NiA was found to follow a relationship d = k1, E1/α with k, = 2.4 ± 0.4 and α = 3.3 ± 0.4. A similar relationship with the same value of α is valid for a wide variety of incident ion/target combinations found in the literature.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

scholarly journals Direct Characterization of the Relation between the Mechanical Response and Microstructure Evolution in Aluminum by Transmission Electron Microscopy In Situ Straining

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1431
Author(s):  
Seiichiro Ii ◽  
Takero Enami ◽  
Takahito Ohmura ◽  
Sadahiro Tsurekawa
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Elastic Behavior ◽  
Annealed Specimen ◽  
Displacement Curve ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Stress Drops

Transmission electron microscopy in situ straining experiments of Al single crystals with different initial lattice defect densities have been performed. The as-focused ion beam (FIB)-processed pillar sample contained a high density of prismatic dislocation loops with the <111> Burgers vector, while the post-annealed specimen had an almost defect-free microstructure. In both specimens, plastic deformation occurred with repetitive stress drops (∆σ). The stress drops were accompanied by certain dislocation motions, suggesting the dislocation avalanche phenomenon. ∆σ for the as-FIB Al pillar sample was smaller than that for the post-annealed Al sample. This can be considered to be because of the interaction of gliding dislocations with immobile prismatic dislocation loops introduced by the FIB. The reloading process after stress reduction was dominated by elastic behavior because the slope of the load–displacement curve for reloading was close to the Young’s modulus of Al. Microplasticity was observed during the load-recovery process, suggesting that microyielding and a dislocation avalanche repeatedly occurred, leading to intermittent plasticity as an elementary step of macroplastic deformation.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

An X-ray scattering study on inverted Ge–Si huts grown at low temperatures

2004 ◽  
Vol 19 (4) ◽  
pp. 347-351
Author(s):  
J. Xu ◽  
X. S. Wu ◽  
B. Qian ◽  
J. F. Feng ◽  
S. S. Jiang ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Lattice Strain ◽  
Lattice Mismatch ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Large Lattice ◽  
Scattering Study

Ge–Si inverted huts, which formed at the Si∕Ge interface of Si∕Ge superlattice grown at low temperatures, have been measured by X-ray diffraction, grazing incidence X-ray specular and off-specular reflectivities, and transmission electron microscopy (TEM). The surface of the Si∕Ge superlattice is smooth, and there are no Ge–Si huts appearing on the surface. The roughness of the surfaces is less than 3 Å. Large lattice strain induced by lattice mismatch between Si and Ge is found to be relaxed because of the intermixing of Ge and Si at the Si∕Ge interface.

Observations of Damage and Transport of Hydrogen in Ion Bombarded Polycrystalline Silicon

1984 ◽  
Vol 33 ◽  
Author(s):  
D. J. Sharp ◽  
J. K. G. Panitz ◽  
C. H. Seager
Keyword(s):  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Columnar Structure ◽  
Hydrogen Transport ◽  
Transport Mechanisms ◽  
Sheet Resistivity ◽  
Near Surface ◽  
Resistivity Measurements ◽  
Transmission Electron ◽  
Defect Passivation

ABSTRACTA combination of chemical etching and sheet resistivity measurements showed that intense (1.4 mA/cm2 ) low energy (1400 eV) ion beam hydrogenation of polycrystalline silicon having a columnar structure can produce electrical defect passivation to depths in the order of 100 μm. Transmission electron micrographs disclose surface and near-surface features resulting from the ion beam bombardment which suggest that one of the hydrogen transport mechanisms may be defect induced.

Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

1998 ◽  
Vol 514 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomne ◽  
S. Hogg ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Beam ◽  
Hexagonal Structure ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Thermal Stability Of

ABSTRACTThe Nd-disilicide, which exists only in a tetragonal or an orthorhombic structure, cannot be grown epitaxially on a Si(111) substrate. However, by adding Y and using channeled ion beam synthesis, hexagonal Nd0.32Y0.68Si1.7 epilayers with lattice constant of aepi = 0.3915 nm and cepi = 0.4152 nm and with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3 % respectively) are formed in a Si(111) substrate. This shows that the addition of Y to the Nd-Si system forces the latter into a hexagonal structure. The epilayer is stable up to 950 °C; annealing at 1000 °C results in partial transformation into other phases. The formation, the structure and the thermal stability of this ternary silicide have been studied using Rutherford backscattering/channeling, x-ray diffraction and transmission electron microscopy.

Microstructural Features of EB-PVD Thermal Barrier Coatings Irradiated by High-Intensity Pulsed Ion Beam

2008 ◽  
Vol 373-374 ◽  
pp. 300-303 ◽  
Author(s):  
C. Liu ◽  
X.G. Han ◽  
X.P. Zhu ◽  
M.K. Lei
Keyword(s):  
Electron Microscope ◽  
Thermal Barrier Coatings ◽  
High Intensity ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Thermal Barrier ◽  
X Ray Diffraction ◽  
Barrier Coatings ◽  
Transmission Electron ◽  
Single Column

Thermal barrier coatings (TBCs) fabricated by electron-beam physical-vapor deposition (EB-PVD) were irradiated by high-intensity pulsed ion beam (HIPIB) at an ion current density of 100 A/cm2 with a shot number of 1-10. Microstructural features of the irradiated EB-PVD TBCs were characterized by using X-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM), respectively. All the HIPIB-irradiated EB-PVD TBC surfaces present smooth and densified features. The originated intercolumnar channels growing out to the top-coat surface and nanometer-scale gaps inside each single column were sealed after the remelting of TBC surface induced by HIPIB, resulting in formation of a continuous remelted layer about 1-2 μm in thickness. The dense remelted layer can work as a barrier against the heat-flow and corrosive gases, and gives the possibility of improving thermal conductivity and oxidation resistance of the HIPIB irradiated EB-PVD TBC.

Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation

1994 ◽  
Vol 339 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
J. Stoemenos
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Surface Region ◽  
Ion Beam Irradiation ◽  
Surface Layers ◽  
Near Surface ◽  
Transmission Electron ◽  
Amorphous Surface ◽  
Amorphous Sic

ABSTRACTThe evolution of the damage in the near surface region of single crystalline 6H-SiC generated by 200 keV Ge+ ion implantation at room temperature (RT) was investigated by Rutherford backscattering spectroscopy/chanelling (RBS/C). The threshold dose for amorphization was found to be about 3 · 1014 cm-2, Amorphous surface layers produced with Ge+ ion doses above the threshold were partly annealed by 300 keV Si+ ion beam induced epitaxial crystallization (IBIEC) at a relatively low temperature of 480°C For comparison, temperatures of at least 1450°C are necessary to recrystallize amorphous SiC layers without assisting ion irradiation. The structure and quality of both the amorphous and recrystallized layers were characterized by cross-section transmission electron microscopy (XTEM). Density changes of SiC due to amorphization were measured by step height measurements.

Study of Electrochemical Deposition of Copper and Microstructure Evolution in Fine Lines

1999 ◽  
Vol 562 ◽  
Author(s):  
Stephan Grunow ◽  
Deda Diatezua ◽  
Soon-Cheon Seo ◽  
Timothy Stoner ◽  
Alain E. KaloyerosI
Keyword(s):  
Electrochemical Deposition ◽  
Microstructure Evolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Process Window ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Underlying Mechanisms ◽  
Pure Cu

ABSTRACTAs computer chip technologies evolve from aluminum-based metallization schemes to their copper-based counterparts, Electrochemical Deposition (ECD) is emerging as a viable deposition technique for copper (Cu) interconnects. This paper presents the results of a first-pass study to examine the underlying mechanisms that control ECD Cu nucleation, growth kinetics, and post-deposition microstructure evolution (self-annealing), leading to the development and optimization of an ECD Cu process recipe for sub-quarter-micron device generations. The influence of bath composition, current waveform, type and texture of Cu seed layer, and device feature size (scaling effect) on the evolution of film texture, morphology, electrical properties, and fill characteristics was investigated using a manufacturing-worthy ReynoldsTech 8″ wafer plating tool. Resulting films were analyzed by X-ray Diffraction (XRD), four-point resistivity probe, Focused-Ion-Beam Scanning Electron Microscopy (FIB-SEM), and Atomic Force Microscopy (AFM). These investigations identified an optimized process window for the complete fill of aggressive device structures with pure Cu with resistivity ∼ 2.0 μΩ-cm and smooth surface morphology.

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