Stromatolite Growth in Lagoa Vermelha, Southeastern Coast of Brazil: Evidence of Environmental Changes

Radiocarbon ◽  
2017 ◽  
Vol 60 (2) ◽  
pp. 383-393 ◽  
Author(s):  
Carla Carvalho ◽  
Maria Isabela N. Oliveira ◽  
Kita Macario ◽  
Renato B. Guimarães ◽  
Carolina N Keim ◽  
...  
Keyword(s):  
Growth Rates ◽  
Environmental Changes ◽  
Arid Environment ◽  
High Availability ◽  
Water Evaporation ◽  
X Ray Diffraction ◽  
Lower Growth ◽  
X Ray ◽  
Hypersaline Lagoon ◽  
Dolomite Formation

AbstractAmong the oldest remains of living beings to have inhabited the Earth’s surface, there are the stromatolites—laminated sedimentary rocks associated with lithified mats of layered phototrophic microbial communities—which grow in specific environmental conditions. In the present work, we study a recent carbonatic stromatolite from Lagoa Vermelha (Rio de Janeiro, Brazil), a shallow coastal hypersaline lagoon. X-ray diffraction was associated to a depth chronological model defining three different sections based on changes in mineral composition of the stromatolite with increased dolomite content. Although a mean growth rate of 0.19±0.03 mm/yr is observed, the model discloses decreasing growth rates among the sections. Since dolomite formation can be related to high availability of Mg+2, confirmed by an expressive presence of (Ca, Mg)CO3, the lower growth rates were associated to a more arid environment, until approximately 1440 cal AD, with higher temperatures and consequently promoting water evaporation and salinity enhancement.

Growth and Characterization of bulk GaN by Ga Vapor Transport

2004 ◽  
Vol 831 ◽  
Author(s):  
Phanikumar Konkapaka ◽  
Huaqiang Wu ◽  
Yuri Makarov ◽  
Michael G. Spencer
Keyword(s):  
Growth Rates ◽  
Vapor Transport ◽  
Spiral Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bulk Gan ◽  
Diffraction Patterns

ABSTRACTBulk GaN crystals of dimensions 8.5 mm × 8.5 mm were grown at growth rates greater than 200μm/hr using Gallium Vapor Transport technique. GaN powder and Ammonia were used as the precursors for growing bulk GaN. Nitrogen is used as the carrier gas to transport the Ga vapor that was obtained from the decomposition of GaN powder. During the process, the source GaN powder was kept at 1155°C and the seed at 1180°C. Using this process, it was possible to achieve growth rates of above 200 microns/hr. The GaN layers thus obtained were characterized using X-Ray diffraction [XRD], scanning electron microscopy [SEM], and atomic force microscopy [AFM]. X-ray diffraction patterns showed that the grown GaN layers are single crystals oriented along c direction. AFM studies indicated that the dominant growth mode was dislocation mediated spiral growth. Electrical and Optical characterization were also performed on these samples. Hall mobility measurements indicated a mobility of 550 cm2/V.s and a carrier concentration of 6.67 × 1018/cm3

Single Crystal Wurtzitic Aluminum Nitride Growth on Silicon Using Supersonic Gas Jets

1995 ◽  
Vol 395 ◽  
Author(s):  
S. A. Ustin ◽  
L. Lauhon ◽  
K. A. Brown ◽  
D. Q. Hu ◽  
W. Ho
Keyword(s):  
Aluminum Nitride ◽  
Growth Rates ◽  
High Energy ◽  
X Ray Diffraction ◽  
Rutherford Back Scattering ◽  
X Ray ◽  
Supersonic Molecular Beam ◽  
Supersonic Beams ◽  
Wide Range

ABSTRACTHighly oriented aluminum nitride (0001) films have been grown on Si(001) and Si (111) substrates at temperatures between 550° C and 775° C with dual supersonic molecular beam sources. Triethylaluminum (TEA;[(C2H5)3Al]) and ammonia (NH3) were used as precursors. Hydrogen, helium, and nitrogen were used as seeding gases for the precursors, providing a wide range of possible kinetic energies for the supersonic beams due to the disparate masses of the seed gases. Growth rates of AIN were found to depend strongly on the substrate orientation and the kinetic energy of the incident precursor; a significant increase in growth rate is seen when seeding in hydrogen or helium as opposed to nitrogen. Growth rates were 2–3 times greater on Si(001) than on Si(111). Structural characterization of the films was done by reflection high energy electron diffraction (RHEED) and x-ray diffraction (XRD). X-ray rocking curve (XRC) full-width half-maxima (FWHM) were seen as small as 2.5°. Rutherford back scattering (RBS) was used to determine the thickness of the films and their chemical composition. Films were shown to be nitrogen rich, deviating from perfect stoichiometry by 10%–20%. Surface analysis was performed by Auger electron spectroscopy (AES).

Effects of Growth Rates on Directionally Solidified Microstructure of Al-Ni-Y Ternary Alloy

2012 ◽  
Vol 562-564 ◽  
pp. 477-481
Author(s):  
Rui Xu
Keyword(s):  
Temperature Gradient ◽  
Directional Solidification ◽  
Ternary Alloy ◽  
Growth Rates ◽  
Optical Microscope ◽  
Experimental Results ◽  
Al Alloy ◽  
Directionally Solidified ◽  
X Ray Diffraction ◽  
X Ray

The directional solidification of the ternary Al alloy with composition of 2.6 at%Ni, 0.9 at%Y and 96.5 at% Al was carried out under the temperature gradient of 5 K/mm and the droping velocities of 0.5 mm/min, 1 mm/min, 5 mm/min, 10 mm/min, and 25 mm/min. The microstructure of the Al-Ni-Y ternary alloy was also analyzed by X-ray diffraction and optical microscope. The experimental results show that the microstructures of the Al-Ni-Y ternary alloy are consisted of ª-Al2, Al3Ni and Y4Ni6Al23phase when the alloy was directionally solidified in all directionally solidified rates in the experiments. No primary -Al can be found in the sample with directionally solidified rate of 0.5 mm/min. When the rates higher than 1 mm/min, the primary ª-Al can be observed. The microstructure of the directionally solidified alloy becomes finer and the primary ª-Al is smaller gradually with the increasing of growth velocities when the dropping rate of directional solidification is higher than 5 min/min. Two eutectic structures, Y4Ni6Al23andª-Al eutectic and Al3Ni and ª-Al eutectic, can be found when the dropping rate is higher than 10 mm/min.

Microstructure and mineral composition of Holocene stromatolites from Lagoa Vermelha, a hypersaline lagoon in Brazil: Insights into laminae genesis

2020 ◽  
Vol 90 (8) ◽  
pp. 887-905
Author(s):  
Carolina N. Keim ◽  
Hélisson Nascimento dos Santos ◽  
Carolina Souza Santiago ◽  
Simone Pennafirme ◽  
Reiner Neumann ◽  
...  
Keyword(s):  
Microbial Mats ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fine Grained ◽  
Left Behind ◽  
Microbial Ecosystems ◽  
Mineral Deposition ◽  
Magnesium Calcite ◽  
Hypersaline Lagoon ◽  
Janeiro State

ABSTRACT Stromatolites are domes, columns, or nearly flat crusts of laminated sedimentary rocks, usually consisting of Ca-Mg carbonates. Stromatolites result from lithification of microbial mats, which are benthic microbial ecosystems where microorganisms arrange themselves in layers according to their physiology. Despite a century of research, the hypothesis of stromatolite genesis by lithification of microbial mats remains controversial, and a convincing explanation for how stromatolites arise from microbial mats is still lacking. In this work, we analyze in detail a stromatolite from Lagoa Vermelha, a coastal hypersaline lagoon in Rio de Janeiro State, Brazil. The stromatolite presents a laminated core and thrombolitic regions at the periphery. Both thrombolitic and laminated facies consist of fine-grained authigenic minerals with minor contributions of bioclasts and quartz grains. X-ray diffraction shows aragonite, high-magnesium calcite (HMC) containing about 17% MgCO3, a very-high-Mg calcite (VHMC) containing 29–46% MgCO3, and small amounts of quartz and pyrite. Scanning electron microscopy of polished samples coupled to energy-dispersive X-ray analysis (EDS) showed that each lamina was composed of 1–4 distinct mineral phases embedded within each other, indicating sequential steps of precipitation of Ca-Mg carbonates under distinct biogeochemical conditions. The coexistence of different phases in a single lamina suggests that several processes contribute to mineral deposition as the incipient stromatolite laminae are left behind by microorganisms from the lower layers of the microbial mat when they grow and/or move upwards.

Relations between Paleoclimatological Conditions and Mineralogical Characteristics of Clays in Miocene Sediments at Linxia Basin, China

2014 ◽  
Vol 580-583 ◽  
pp. 912-918
Author(s):  
Na Yu ◽  
Han Lie Hong ◽  
Zhao Hui Li ◽  
Ke Xin Zhang ◽  
Rong Biao Li
Keyword(s):  
Arid Environment ◽  
Tibet Plateau ◽  
X Ray Diffraction ◽  
The Loess Plateau ◽  
X Ray ◽  
Mineral Characteristics ◽  
Fault Block ◽  
Mineralogical Characteristics ◽  
Linxia Basin ◽  
The Tibet Plateau

Linxia basin is a late Cenozoic fault-block basin along the border between the Tibet plateau and the Loess plateau in Northwestern China. Its formation and sediments’ record may be directly affected by the structural dynamics and the uplift of the Tibet Plateau. For this reason, we studied the mineral characteristics of the Maogou formation of Miocene sediments using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD results showed that quartz, chlorite, illite, calcite, plagioclase, orthoclase, kaolinite, and trace palygorskite are present throughout the sequence of the cross-section in Linxia basin. In contrast, gypsum and ankerite occur occasionally in the upper portion of the Miocene deposits. The content of calcite varied with layers in the profile and was relatively concentrated in mudstone. Chlorite and illite were observed transforming into palygorskite under SEM observation. Based on the mineral characteristics and the change of mineral composition, especially the clay minerals, it could be inferred that an arid environment prevailed in the region with warm and cold intervals during Miocene time.

LFZ growth of (Bi, Pb)–Sr–Ca–Cu–O superconducting fibers

1991 ◽  
Vol 6 (4) ◽  
pp. 699-703 ◽  
Author(s):  
G.F. de la Fuente ◽  
R. Navarro ◽  
F. Lera ◽  
C. Rillo ◽  
J. Bartolomé ◽  
...  
Keyword(s):  
Partial Pressure ◽  
Growth Rates ◽  
Floating Zone ◽  
Partial Pressure Of Oxygen ◽  
X Ray Diffraction ◽  
Zone Method ◽  
Floating Zone Method ◽  
X Ray ◽  
Fiber Properties ◽  
Growth Atmosphere

Powder x-ray diffraction, d.c. and a.c. susceptibilities, and SEM have been used to study (Bi1−xPbx)2Sr2Ca2Cu3O10−δ fibers grown by the Laser Floating Zone method. The well-oriented, long-grained superconductor fiber properties are shown to be highly dependent on the partial pressure of oxygen in the growth atmosphere, as well as on fiber pulling rate. Slowly grown fibers contain initially the 2212 (80 K) phase; the 2223 (110 K) phase also appears upon annealing in air. Faster growth rates result in fibers that contain a mixture of the 2212 and 2201 phases and, in this case, long annealing procedures are necessary to observe the 2223 phase.

Hydrothermal Synthesis and Characterization of ThO2, UxTh1-xO2, and UOx

2013 ◽  
Vol 1576 ◽  
Author(s):  
Jacob Castilow ◽  
Timothy W Zens ◽  
J. Matthew Mann ◽  
Joseph W. Kolis ◽  
Colin D. McMillen ◽  
...  
Keyword(s):  
Hydrothermal Synthesis ◽  
Lower Bound ◽  
Growth Rates ◽  
Curve Analysis ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
Average Growth ◽  
Rocking Curve ◽  
X Ray

ABSTRACTHydrothermal synthesis of ThO2, UxTh1-xO2, and UOx at temperatures between 670°C and 700°C has been demonstrated. Synthesis at these temperatures is 50-80°C below prior growth studies and represents a new lower bound of successful growth. ThO2 single crystals of dimensions 6.49mm x 4.89mm x 3.89 mm and weighing 0.633g have been synthesized at average growth rates near 0.125mm/week. Single crystal UxTh1-xO2 crystals with mole fractions up to x≈0.30 have also been grown. The largest alloyed crystal with mole fraction x≈0.23 has dimensions of 2.97mm x 3.23mm x ∼3mm and recorded average growth rates near 0.2mm/week. Four structures were solved from X-ray diffraction data and their crystallographic data reported here. Rocking curve analysis determined a dislocation density of 1.2×109 cm-2.

scholarly journals Occurrences and genesis of palygorskite/sepiolite and associated minerals in the Barzaman formation, United Arab Emirates

Clay Minerals ◽  
2016 ◽  
Vol 51 (5) ◽  
pp. 763-779 ◽  
Author(s):  
Salah Draidia ◽  
Meriam El Ouahabi ◽  
Lahcen Daoudi ◽  
Hans-Balder Havenith ◽  
Nathalie Fagel
Keyword(s):  
United Arab Emirates ◽  
Environmental Changes ◽  
Drill Hole ◽  
Silty Clay ◽  
X Ray Diffraction ◽  
Humid Climate ◽  
Western Margin ◽  
X Ray ◽  
Direct Precipitation ◽  
Scanning Electron

AbstractThe Barzaman Formation exposed in the United Arab Emirates was deposited as a series of fluvial sediment sequences lying along the western margin of the Hajar Mountains, part of the Oman–UAE ophiolite. This formation consists of a sequence of rocks dominated by variably cemented and altered conglomerates comprising calcareous siltstones and calcareous clays deposited during the Miocene to Pliocene under a humid climate. The conglomerates are composed largely of ultramafic and lesser-mafic clasts. The present study was undertaken in order to understand the occurrence and genesis of palygorskite and sepiolite in relation to the environmental changes including evaporitic and sabkha environments.Sediments were collected from two trenches and a drill hole of ∼22 m depth. Samples were analysed by optical petrograpy, X-ray diffraction and scanning electron microscopy. Pedogenesis occurred at the deeper level in well cemented conglomerate which constitutes the hard crust. Post-depositional erosion started in marine phreatic or vadose zones as shown by the neoformation of serpentine from the weathering of olivine as well as of calcite and dolomite. Neoformation of palygorskite, sepiolite, dolomite and halite occurred under evaporitic conditions on calcareous silty clay facies. Relatively hot, vadose and oxidizing environmental conditions affected the calcareous siltstone facies leading to the genesis of dolomite and palygorskite by direct precipitation from solution rich in Ca, Mg, Al, Fe and Si ions.

InAs and InGaAs Growth by Chloride Atomic Layer Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
H. Shimawaki ◽  
Y. Kato ◽  
A. Usui
Keyword(s):  
Growth Factor ◽  
Growth Temperature ◽  
Growth Rates ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Superlattice Structures ◽  
Inp Substrates

AbstractInAs chloride ALE has been carried out in detail, resulting in successful InGaAs ALE on (111)B InP substrates. InAs growth of 0.9 ML/cycle is obtained for (111)B InAs substrates at temperatures below 375 °C, while growth rates for (100) and (111)A substrates steadily decrease with increases in growth temperature. The growth rates are independent of InCI pressure at 375 °C, suggesting a self-limiting growth factor in InAs chloride ALE. (GaAs)1(InAs)1 and (GaAs)2(InAs)2 superalloys can be prepared on (111)B InP substrates at 375 °C. Growth rates and crystal compositions for both layers agree well with the values expected for ideal superalloys. The presence of superlattice structures is indicated by X-ray diffraction measurement,

Effects of Microstructure on Photoluminescence of SrS:Eu2+,SM3+ thin Films

1993 ◽  
Vol 301 ◽  
Author(s):  
Susan Z. Hua ◽  
L. Salamanca-Riba ◽  
M. Wuttig ◽  
P. K. Soltani
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Rates ◽  
Growth Conditions ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
The Eu

ABSTRACTThe microstructure and its effects on the photoluminescence properties of SrS:Eu2+,Sm3+ thin films grown with different conditions were studied by transmission electron microscopy, x-ray diffraction and photoluminescence techniques. The SrS:Eu2+,Sm3+ thin films were prepared by e-beam evaporation at different substrate temperatures and growth rates. Both of these growth conditions affect the crystallinity of the thin films. The Sm3+ emission is stronger in the films grown at higher growth rates and at an optimum substrate temperature. We believe that the stronger Sm3+ emission is due to the higher population of Sm trivalent charge states in the films. Further increase of the substrate temperature increases the grain size in the films, but has no significant effect on the PL emission properties. In contrast, the Eu2+ emission is less sensitive to growth conditions.

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