Comparison of measured and computed beam ion current densities emitted from two 2 kJ plasma focus machines

Vacuum ◽  
2017 ◽  
Vol 136 ◽  
pp. 163-167 ◽  
Author(s):  
M. Akel ◽  
S. Alsheikh Salo ◽  
Sh. Ismael ◽  
S.H. Saw ◽  
S. Lee
Keyword(s):  
Plasma Focus ◽  
Ion Current ◽  
Current Densities

Optimum extracted negative‐ion current densities from tandem high‐density systems

1985 ◽  
Vol 58 (5) ◽  
pp. 1759-1764 ◽  
Author(s):  
J. R. Hiskes ◽  
A. M. Karo ◽  
P. A. Willmann
Keyword(s):  
High Density ◽  
Ion Current ◽  
Negative Ion ◽  
Current Densities

scholarly journals Carbon, Nitrogen, and Oxygen Ion Implantation of Stainless Steel

1995 ◽  
Vol 396 ◽  
Author(s):  
D.J. Rej ◽  
N.V. Gavrilov ◽  
D. Emlin ◽  
I. Henins ◽  
K. Kern ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Ion Implantation ◽  
Plasma Source ◽  
Beam Line ◽  
Ion Current ◽  
Concentration Profiles ◽  
Oxygen Ion ◽  
Plasma Source Ion Implantation ◽  
Current Densities ◽  
Oxygen Ion Implantation

AbstractIon implantation experiments of C, N and O into stainless steel have been performed with beam-line and plasma source ion implantation methods. Acceleration voltages are varied between 27 and 50 kV, with pulsed ion current densities between 1 and 10 mA/cm2. Implanted doses range from 0.5 to 3×1018cm-2, while workpiece temperatures are maintained between 25 and 800°C. The implant concentration profiles, microstructure and surface mechanical properties of the implanted materials are reported.

scholarly journals Laser-driven generation of high-current ion beams using skin-layer ponderomotive acceleration

2005 ◽  
Vol 23 (4) ◽  
pp. 401-409 ◽  
Author(s):  
J. BADZIAK ◽  
S. GŁOWACZ ◽  
S. JABŁOŃSKI ◽  
P. PARYS ◽  
J. WOŁOWSKI ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Scaling Laws ◽  
Short Pulse ◽  
Ion Beam ◽  
Thin Foil ◽  
Skin Layer ◽  
Ion Beams ◽  
Ion Current ◽  
High Current ◽  
Current Densities

Basic properties of generation of high-current ion beams using the skin-layer ponderomotive acceleration (S-LPA) mechanism, induced by a short laser pulse interacting with a solid target are studied. Simplified scaling laws for the ion energies, the ion current densities, the ion beam intensities, and the efficiency of ions' production are derived for the cases of subrelativistic and relativistic laser-plasma interactions. The results of the time-of-flight measurements performed for both backward-accelerated ion beams from a massive target and forward-accelerated beams from a thin foil target irradiated by 1-ps laser pulse of intensity up to ∼ 1017 W/cm2 are presented. The ion current densities and the ion beam intensities at the source obtained from these measurements are compared to the ones achieved in recent short-pulse experiments using the target normal sheath acceleration (TNSA) mechanism at relativistic (>1019 W/cm2) laser intensities. The possibility of application of high-current ion beams produced by S-LPA at relativistic intensities for fast ignition of fusion target is considered. Using the derived scaling laws for the ion beam parameters, the achievement conditions for ignition of compressed DT fuel with ion beams driven by ps laser pulses of total energy ≤ 100 kJ is shown.

Performance of pinching radius effects to current densities of NX2 plasma focus

2017 ◽  
Vol 11 ◽  
pp. 551-559
Author(s):  
T. Saktioto ◽  
N. D. Nawi ◽  
Fairuz Diyana Ismail ◽  
Rakhmawati Farma
Keyword(s):  
Plasma Focus ◽  
Current Densities

scholarly journals Two-dimensional focusing of self-magnetically insulated “Plasma Focus Diode”

1989 ◽  
Vol 7 (2) ◽  
pp. 287-303 ◽  
Author(s):  
Katsumi Masugata ◽  
Hironobu Isobe ◽  
Keigo Aga ◽  
Masami Matsumoto ◽  
Shigeo Kawata ◽  
...  
Keyword(s):  
Current Density ◽  
Plasma Focus ◽  
Ion Beam ◽  
Ion Current ◽  
Anode Surface ◽  
Beam Power ◽  
Simple Type ◽  
Experimental Conditions ◽  
Simulation Code ◽  
Ion Current Density

A new and simple type of self-magnetically insulated, vacuum ion diode named “Plasma Focus Diode” has been successfully developed with a large solid angle of irradiation and low divergence angle. The diode has a pair of coaxial cylindrical electrodes similar to a Mather-type plasma focus device. Ion-current density of 1·9 kA/cm2 has been obtained on the anode surface under the experimental conditions of diode voltage ∼1·4 MV, diode current ∼180 kA, and pulse width ∼75 ns. The generated ion beam has been two-dimensionally focused (line focusing) with a focusing radius of ∼0·18 mm, giving a maximum ion current density and beam power density at the axis of ∼0·14 MA/cm2 and ∼0·18 TW/cm2, respectively. The motion of electrons in the gap has been numerically simulated by use of a newly developed particle-in-cell computer simulation code, and good agreement has been obtained between the simulation and the experiment.

The effect of high implant doses and high ion current densities on polyimide film properties

2002 ◽  
Vol 47 (4) ◽  
pp. 459-464 ◽  
Author(s):  
V. N. Popok ◽  
I. I. Azarko ◽  
R. I. Khaibullin
Keyword(s):  
Polyimide Film ◽  
Ion Current ◽  
Film Properties ◽  
Current Densities

The Chemical Etch of Tungsten Single Crystals and Foils With XeF2

1986 ◽  
Vol 68 ◽  
Author(s):  
A. Bensaoula ◽  
J. Stozier ◽  
A. Ignatiev ◽  
J. Wolfe
Keyword(s):  
Kinetic Model ◽  
Single Crystal ◽  
Single Crystals ◽  
Chemical Etching ◽  
Molecular Beam ◽  
Ion Current ◽  
Fluorine Concentration ◽  
Product Yields ◽  
Chemical Etch ◽  
Current Densities

AbstractThe chemical etching of W(100) single crystals and polycrystalline tungsten foils using a XeF2 molecular beam has been studied with and without simultaneous bombardment by energetic inert ions.The surface fluorine concentration, measured under different XeF2 pressures (10−7 to 10−5 torr) and ion current densities, is found to be always less than a monolayer.Depth profiles of the fluorine layer show that in both single crystal and poly samples, the fluorine is surface localized, although slightly deeper in the W(100).A kinetic model is presented to account for the enhanced etching under ion bombardment.The mechanism proposed is mainly a defect driven enhancement of the etch yield.This model is consistent with both the fluorine concentrations measured in this work as well as the etch product yields reported by Winters.

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