Optimum extracted negative‐ion current densities from tandem high‐density systems

1985 ◽  
Vol 58 (5) ◽  
pp. 1759-1764 ◽  
Author(s):  
J. R. Hiskes ◽  
A. M. Karo ◽  
P. A. Willmann
Keyword(s):  
High Density ◽  
Ion Current ◽  
Negative Ion ◽  
Current Densities

scholarly journals Generation of picosecond high-density ion fluxes by skin-layer laser-plasma interaction

2005 ◽  
Vol 23 (2) ◽  
pp. 143-147 ◽  
Author(s):  
J. BADZIAK ◽  
S. GŁOWACZ ◽  
S. JABŁOŃSKI ◽  
P. PARYS ◽  
J. WOŁOWSKI ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Current Density ◽  
Plasma Layer ◽  
Short Pulse ◽  
Skin Layer ◽  
High Density ◽  
Ion Fluxes ◽  
Ion Current ◽  
Layer Interaction ◽  
Current Densities

The possibilities of producing ultrahigh-current-density ps ion fluxes by the skin-layer interaction of a short (≤ 1ps) laser pulse with plasma were studied using two-fluid hydrodynamic simulations, and the time-of-flight measurements. Backward-emitted ion fluxes from a massive (Au) target as well as forward-emitted fluxes from various thin foil targets irradiated by a 1-ps laser pulse of intensity up to 2 × 1017W/cm2were recorded. Both the simulations and the measurements confirmed that using the short-pulse skin-layer interaction of a laser pulse with a thin pre-plasma layer in front of a solid target, a high-density collimated ion flux of extremely high ion current density (∼ 1010A/cm2close to the target), can be generated at laser intensity only ∼ 1017W/cm2. The ion current densities produced by this way were found to be comparable to (or even higher than) those estimated from recent short-pulse experiments using a target normal sheath acceleration mechanism at relativistic laser intensities. The effect of the target structure on the current densities and energies of forward-emitted ions is demonstrated.

scholarly journals Полевой транзистор на протонной проводимости пленок оксида графена и нафиона

2018 ◽  
Vol 52 (3) ◽  
pp. 370
Author(s):  
В.А. Смирнов ◽  
А.Д. Мокрушин ◽  
Н.Н. Денисов ◽  
Ю.А. Добровольский
Keyword(s):  
Graphene Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ion Current ◽  
Negative Ion ◽  
Current Gain ◽  
Positive Bias ◽  
Electrical Characteristics ◽  
Proton Current ◽  
Effect Transistor

AbstractProton conductivity in graphene oxide and Nafion films depending on humidity and voltages across electrodes is studied in the model of a field-effect transistor. The electrical characteristics of the films are similar to one another, but the mobility of positive charges in Nafion and the current gain are higher by 2–3 orders of magnitude compared with graphene oxide. The negative ion current in graphene-oxide films at positive bias voltage is significant compared with the proton current (up to ~10%), while it is almost lacking in Nafion films (<1%).

High-density plasma production for neutralizing negative ion beam

1998 ◽  
Vol 69 (2) ◽  
pp. 980-982 ◽  
Author(s):  
M. Y. Tanaka ◽  
M. Bacal ◽  
M. Sasao ◽  
T. Kuroda
Keyword(s):  
Ion Beam ◽  
High Density ◽  
Negative Ion ◽  
Plasma Production ◽  
Density Plasma

scholarly journals Carbon, Nitrogen, and Oxygen Ion Implantation of Stainless Steel

1995 ◽  
Vol 396 ◽  
Author(s):  
D.J. Rej ◽  
N.V. Gavrilov ◽  
D. Emlin ◽  
I. Henins ◽  
K. Kern ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Ion Implantation ◽  
Plasma Source ◽  
Beam Line ◽  
Ion Current ◽  
Concentration Profiles ◽  
Oxygen Ion ◽  
Plasma Source Ion Implantation ◽  
Current Densities ◽  
Oxygen Ion Implantation

AbstractIon implantation experiments of C, N and O into stainless steel have been performed with beam-line and plasma source ion implantation methods. Acceleration voltages are varied between 27 and 50 kV, with pulsed ion current densities between 1 and 10 mA/cm2. Implanted doses range from 0.5 to 3×1018cm-2, while workpiece temperatures are maintained between 25 and 800°C. The implant concentration profiles, microstructure and surface mechanical properties of the implanted materials are reported.

Pulse Electroplating of Copper Film: A Study of Process and Microstructure

2008 ◽  
Vol 8 (5) ◽  
pp. 2568-2574 ◽  
Author(s):  
Xi Zhang ◽  
K. N. Tu ◽  
Zhong Chen ◽  
Y. K. Tan ◽  
C. C. Wong ◽  
...  
Keyword(s):  
Copper Film ◽  
High Density ◽  
Grain Structure ◽  
Structure Evolution ◽  
Copper Films ◽  
Applied Pulse ◽  
Pulse Electroplating ◽  
Random Microstructure ◽  
High Pulse ◽  
Current Densities

Copper films with high density of twin boundaries are known for high mechanical strength with little tradeoff in electrical conductivity. To achieve such a high density, twin lamellae and spacing will be on the nanoscale. In the current study, 10 μm copper films were prepared by pulse electrodeposition with different applied pulse peak current densities and pulse on-times. It was found that the deposits microstructure was dependent on the parameters of pulse plating. Higher energy pulses caused stronger self-annealing effect on grain recrystallization and growth, thus leading to enhanced fiber textures, while lower energy pulses gave rise to more random microstructure in the deposits and rougher surface topography. However in the extremes of pulse currents we applied, the twin densities were not as high as those resulted from the medium or relatively high pulse currents. The highest amount of nanoscale twinning was found to form from a proper degree of self-annealing induced grain structure evolution. The driving force behind the self-annealing is discussed.

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