Microwave dielectric behavior of nanocrystalline titanium dioxide thin films

Vacuum ◽  
2007 ◽  
Vol 81 (5) ◽  
pp. 686-694 ◽  
Author(s):  
D. Pamu ◽  
K. Sudheendran ◽  
M.Ghanashyam Krishna ◽  
K.C. James Raju ◽  
Anil K. Bhatnagar
2013 ◽  
Vol 264 ◽  
pp. 737-742 ◽  
Author(s):  
Sanjeev K. Gupta ◽  
Jitendra Singh ◽  
K. Anbalagan ◽  
Prateek Kothari ◽  
Ravi Raj Bhatia ◽  
...  

1998 ◽  
Vol 519 ◽  
Author(s):  
S.D. Burnside ◽  
V. Shklover ◽  
C.A. Barbe ◽  
K. Brooks ◽  
P. Comte ◽  
...  

AbstractNanocrystalline titanium dioxide has been synthesized using a sol-gel technique followed by hydrothermal growth at temperatures in the range 190-270°C. Thin films of these colloids were studied using x-ray diffraction (XRD), scanning electron microscopy (SEM), and nitrogen adsorption/desorption. Self-organization of the nanocrystalline particles in regular arrays was observed in films made from colloids autoclaved at lower temperatures. We present herein initial photovoltaic performance of these semiconducting films used as working electrodes in a dye-sensitized solar cell.


2012 ◽  
Vol 16 ◽  
pp. 105-111 ◽  
Author(s):  
Raouf Mechiakh ◽  
R. Gheriani ◽  
R. Chtourou

Titanium dioxide thin films have been prepared by the sol–gel dip-coating method on an ITO substrate. The samples obtained were characterized by different experimental techniques: XRD, Raman, FTIR, spectroscopy of the electrochemical potential and SEM. The X-ray diffraction results showed that the TiO2 thin film obtained for a layer, after a temperature of annealing (400°C) and at the speeds of steeping between 2 and 10 cm∙s-1 was amorphous, and transformed into anatase–brookite at 0.6 cm∙s-1 for 400°C. The data of Raman spectroscopy is in good agreement with the DRX results. Observation by scanning electron microscope shows that the coating was transparent and homogeneous without any visual cracking over a wide area, and the increase in the treatment temperature did not affect the uniformity of the film. The interface of our layers to behaved like a n-type semiconductor.


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