scholarly journals In situ X-ray diffraction studies on the piezoelectric response of PZT thin films

2016 ◽  
Vol 603 ◽  
pp. 29-33 ◽  
Author(s):  
A. Davydok ◽  
T.W. Cornelius ◽  
C. Mocuta ◽  
E.C. Lima ◽  
E.B. Araujo ◽  
...  
Keyword(s):  
Thin Films ◽  
Piezoelectric Response ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray

Microanalysis of Ferroelectric Memories Using Micro X-Ray Diffraction

1996 ◽  
Vol 54 ◽  
pp. 244-245
Author(s):  
M. O. Eatough ◽  
M. A. Rodriguez ◽  
D. Dimos ◽  
B. Tuttle
Keyword(s):  
Thin Films ◽  
New World ◽  
Domain Switching ◽  
Processing Parameters ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Ferroelectric Memories ◽  
Ferroelectric Switching

Since the advent of the microdiffractometer a new world of analysis possibilities have opened. In this paper we will discuss a novel use of microdifraction. We have developed a method for monitoring domain switching in ferroelectric thin films in situ using micro x-ray diffraction (μXRD). μXRD is a nontraditional x-ray diffraction technique which has recently attracted much attention [3]. The microdiffractometer is capable of obtaining a diffraction pattern from 0 – 150° 20 simultaneously from regions as small as 30μm in diameter. The purpose of this study was to determine if ferroelectric switching of ferroelectric Pb(Zr, Ti)O3 (PZT) thin films can be observed using μXRD. This method will be extremely valuable as we target the necessary processing parameters to achieve the desired switching behaviors and to monitor switching in micron-sized devices.

A Study of Switching Behavior in Pb(Zr,Ti) O3 Thin Films Using X-Ray Diffraction

1994 ◽  
Vol 361 ◽  
Author(s):  
Michael O. Eatough ◽  
Duane Dimos ◽  
Bruce A. Tuttle ◽  
William L. Warren ◽  
R. Ramesh
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Domain Switching ◽  
Switching Behavior ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Si Substrates ◽  
Intensity Changes

ABSTRACTPb(Zr,Ti)O3 (PZT) thin films are being developed for use in optical and electronic memory devices. To study ferroelectric switching behavior, we have produced relatively untextured PZT thin films on Si substrates. We have developed a method for using x-ray diffraction to observe domain switching in situ. Our study involved the use of a micro-diffractometer to monitor the switching behavior in relatively small (0.7mm diameter) electroded areas. Diffraction analyses were done while DC voltages were applied and removed, representing several places in the hysteresis loop. In particular, we were looking for relative intensity changes in the [h 00],[00l] diffraction peaks as a function of position in the hysteresis loop. Our study indicates that the 90° domain switching exhibited by bulk ferroelectrics, is very limited in films on Si when grain sizes are less than about 1 μm.

Electric-field-induced lattice distortion in epitaxial BiFeO3 thin films as determined by in situ time-resolved x-ray diffraction

2017 ◽  
Vol 111 (8) ◽  
pp. 082907 ◽  
Author(s):  
Seiji Nakashima ◽  
Osami Sakata ◽  
Hiroshi Funakubo ◽  
Takao Shimizu ◽  
Daichi Ichinose ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Lattice Distortion ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Bifeo3 Thin Films

Thermal stability and miscibility of co-evaporated methyl ammonium lead halide (MAPbX3, X = I, Br, Cl) thin films analysed by in situ X-ray diffraction

2018 ◽  
Vol 6 (24) ◽  
pp. 11496-11506 ◽  
Author(s):  
Paul Pistor ◽  
Thomas Burwig ◽  
Carlo Brzuska ◽  
Björn Weber ◽  
Wolfgang Fränzel
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Thermal Treatment ◽  
Phase Evolution ◽  
X Ray Diffraction ◽  
Crystalline Phases ◽  
X Ray ◽  
Subsequent Thermal Treatment ◽  
Lead Halide

We present the identification of crystalline phases by in situ X-ray diffraction during growth and monitor the phase evolution during subsequent thermal treatment of CH3NH3PbX3 (X = I, Br, Cl) perovskite thin films.

In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO2 and V2O3 thin films

2015 ◽  
Vol 3 (43) ◽  
pp. 11357-11365 ◽  
Author(s):  
Geert Rampelberg ◽  
Bob De Schutter ◽  
Wouter Devulder ◽  
Koen Martens ◽  
Iuliana Radu ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffraction Study ◽  
Resistance Switching ◽  
X Ray Diffraction ◽  
X Ray

VO2 and V2O3 thin films were prepared during in situ XRD investigation by oxidation and reduction of V and V2O5. Films show up to 5 orders of magnitude resistance switching.

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