Study of porogen removal by atomic hydrogen generated by hot wire chemical vapor deposition for the fabrication of advanced low-k thin films

2015 ◽  
Vol 575 ◽  
pp. 103-106 ◽  
Author(s):  
S. Godavarthi ◽  
C. Wang ◽  
P. Verdonck ◽  
Y. Matsumoto ◽  
I. Koudriavtsev ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Low K

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

Growth of “New Form” of Polycrystalline Silicon Thin Films Synthesized by Hot Wire Chemical Vapor Deposition

2005 ◽  
Vol 862 ◽  
Author(s):  
A. R. Middya ◽  
J-J. Liang ◽  
K. Ghosh
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Crystallographic Structure ◽  
Hot Wire ◽  
Silicon Thin Films ◽  
Vapor Deposition Technique ◽  
New Form

AbstractIn this work, we report on next-generation hot wire chemical vapor deposition technique, we call it ceramics hot-wire CVD. Using a new concept of rectangular ceramics filament holder and “confinement of thermal radiation from the filament”, a “new form” of polycrystalline silicon thin films has been developed at low temperature (˜ 250°C). The grains are found to be symmetrically distributed in array along the parallel lines, in (111) direction. On the surface of individual grains, “five-fold” and “six-fold” symmetries have been observed and we suspect that we developed “buckyball” type “giant silicon molecular solids” with different crystalline silicon lattice other than standard single-crystal silicon structure. We observed rarely found “icosaderal” symmetry in silicon thin films. This hypothesis has been supported by multiple Raman active transverse optical modes and the crystallographic structure analyzed by X-ray diffraction.

Nucleation and Growth of Quasicrystalline Silicon Thin Films on Glass Substrate Synthesized by Ceramics Hot Wire Chemical Vapor Deposition

2006 ◽  
Vol 910 ◽  
Author(s):  
Abdul Rafik Middya ◽  
Jian-Jun Liang ◽  
Kartik Ghosh
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Glass Substrate ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Hot Wire ◽  
Silicon Thin Films ◽  
Novel Structure ◽  
Hot Filament

AbstractIn this work, we report on nucleation and growth of silicon thin films on glass substrate with “five-fold” symmetry and “six-fold” symmetry by ceramics hot wire chemical vapor deposition. We observed “confinement of heat and photon” is a powerful approach in developing silicon thin films with novel structure, i.e. quasicrystalline silicon thin films on glass substrate. We found unambiguously that photons emitted from the hot filament influence the nucleation of nanocrystal silicon that produces new type of silicon thin films with “five-fold” symmetry and “six-fold” symmetry.

Hot-wire chemical vapor deposition (HWCVD) of fluorocarbon and organosilicon thin films

2001 ◽  
Vol 395 (1-2) ◽  
pp. 288-291 ◽  
Author(s):  
K.K.S Lau ◽  
H.G Pryce Lewis ◽  
S.J Limb ◽  
M.C Kwan ◽  
K.K Gleason
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire
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