Investigation of Thermal and Hot-Wire Chemical Vapor Deposition Copper Thin Films on TiN Substrates Using CupraSelect® as Precursor

2011 ◽  
Vol 11 (9) ◽  
pp. 8169-8173 ◽  
Author(s):  
G. Papadimitropoulos ◽  
D. Davazoglou
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

Growth of “New Form” of Polycrystalline Silicon Thin Films Synthesized by Hot Wire Chemical Vapor Deposition

2005 ◽  
Vol 862 ◽  
Author(s):  
A. R. Middya ◽  
J-J. Liang ◽  
K. Ghosh
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Crystallographic Structure ◽  
Hot Wire ◽  
Silicon Thin Films ◽  
Vapor Deposition Technique ◽  
New Form

AbstractIn this work, we report on next-generation hot wire chemical vapor deposition technique, we call it ceramics hot-wire CVD. Using a new concept of rectangular ceramics filament holder and “confinement of thermal radiation from the filament”, a “new form” of polycrystalline silicon thin films has been developed at low temperature (˜ 250°C). The grains are found to be symmetrically distributed in array along the parallel lines, in (111) direction. On the surface of individual grains, “five-fold” and “six-fold” symmetries have been observed and we suspect that we developed “buckyball” type “giant silicon molecular solids” with different crystalline silicon lattice other than standard single-crystal silicon structure. We observed rarely found “icosaderal” symmetry in silicon thin films. This hypothesis has been supported by multiple Raman active transverse optical modes and the crystallographic structure analyzed by X-ray diffraction.

Nucleation and Growth of Quasicrystalline Silicon Thin Films on Glass Substrate Synthesized by Ceramics Hot Wire Chemical Vapor Deposition

2006 ◽  
Vol 910 ◽  
Author(s):  
Abdul Rafik Middya ◽  
Jian-Jun Liang ◽  
Kartik Ghosh
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Glass Substrate ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Hot Wire ◽  
Silicon Thin Films ◽  
Novel Structure ◽  
Hot Filament

AbstractIn this work, we report on nucleation and growth of silicon thin films on glass substrate with “five-fold” symmetry and “six-fold” symmetry by ceramics hot wire chemical vapor deposition. We observed “confinement of heat and photon” is a powerful approach in developing silicon thin films with novel structure, i.e. quasicrystalline silicon thin films on glass substrate. We found unambiguously that photons emitted from the hot filament influence the nucleation of nanocrystal silicon that produces new type of silicon thin films with “five-fold” symmetry and “six-fold” symmetry.

Hot-wire chemical vapor deposition (HWCVD) of fluorocarbon and organosilicon thin films

2001 ◽  
Vol 395 (1-2) ◽  
pp. 288-291 ◽  
Author(s):  
K.K.S Lau ◽  
H.G Pryce Lewis ◽  
S.J Limb ◽  
M.C Kwan ◽  
K.K Gleason
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire

Activated Pulsed Metalorganic Chemical Vapor Deposition of Ge2Sb2Te5 Thin Films Using Alkyl Precursors

2010 ◽  
Vol 1251 ◽  
Author(s):  
Denis Reso ◽  
Mindaugas Silinskas ◽  
Bodo Kalkofen ◽  
Marco Lisker ◽  
Edmund P. Burte
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Catalytic Method ◽  
Deposition Parameters ◽  
Film Roughness ◽  
Temperature And Pressure

AbstractGe-Sb-Te (GST) thin films were deposited by chemical vapor deposition (CVD) and hot-wire chemical vapor deposition (HW CVD). Several precursor sets (tetraethylgermanium - trimethylantimony - dimethyltellurium (TEGe-TMSb-DMTe), tetraisopropylgermanium - triisopropylantimony - di-tertiarybutyltellurium (TiPGe-TiPSb-DtBTe) and tetraallylgermanium - triisopropylantimony - diisopropyltellurium (TAGe-TiPSb-DiPTe)) were tested for CVD. For the TEGe-TMSb-DMTe precursor set tellurium and germanium could be detected in the films for all deposition temperatures investigated, while Sb was found only in the films deposited at elevated temperature higher than 550 °C. The deposition temperature could be reduced by using two other precursor sets (TiPGe-TiPSb-DtBTe and TAGe-TiPSb-DiPTe). The Ge content, however, could not be sufficiently increased to obtain stoichiometric Ge2Sb2Te5 films. Therefore, the hot wire or catalytic method was applied to improve the decomposition of the precursors. In this case, the desired composition (e.g. Ge2Sb2Te5) was obtained at each investigated temperature by adjusting dosing and deposition parameters. Additionally, film roughness (as low as 2 nm) and deposition rates could be optimized by adjusting deposition temperature and pressure.

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